公开(公告)号：EP2856512A4

公开(公告)日：2015-12-16

申请号：EP13798110

申请日：2013-05-29

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER DAWN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：CA2136886C

公开(公告)日：2007-07-10

申请号：CA2136886

申请日：1994-11-29

Applicant: MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: G01K13/00 ,  G01B11/30 ,  G01J5/00 ,  G01K11/00 ,  G01K11/12 ,  G01N21/47 ,  G01N21/55 ,  H01L21/66

Abstract: A sensor for measuring semiconductor wafer temperature in semiconductor processing equipment, comprising a first laser to provide a first laser beam at a first wavelength and a second laser to provide a second laser beam at a second wavelength. The sensor also includes laser driver and oscillator to modulate the wavelength of the first and second laser beams as the laser beams are directed to and reflected from the wafer, and detector module to measure the change in specular reflectance of the wafer resulting from the modulation of the wavelength of the first and second laser beams. The sensor system also includes signal processing circuitry to determine rms surface roughness of wafer at a known reference temperature from the change in reflectance of wafer resulting from modulation of the wavelengths of the first and second laser beams, and to determine the temperature of wafer from the change in specular reflectance of wafer resulting from modulation of the wavelengths of the first and second laser beams while wafer is at an unknown temperature and the surface roughness of the wafer at the known temperature.

公开(公告)号：CA2136886A1

公开(公告)日：1995-05-31

申请号：CA2136886

申请日：1994-11-29

Applicant: MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: G01J5/00 ,  G01K11/00 ,  G01K11/12 ,  G01N21/47 ,  G01N21/55 ,  H01L21/66 ,  G01K13/00 ,  H01L21/00 ,  G01K11/14 ,  G01B11/30 ,  H01L21/477

Abstract: A sensor (100) for measuring semiconductor wafer (10) temperature in semiconductor processing equipment (30), comprising a first laser (104) to provide a first laser beam at a first wavelength and a second laser (106) to provide a second laser beam at a second wavelength. The sensor also includes laser driver (108) and oscillator (110) to modulate the wavelength of the first and second laser beams as the laser beams are directed to and reflected from the wafer (10), and detector module (130) to measure the change in specular reflectance of the wafer (10) resulting from the modulation of the wavelength of the first and second laser beams. The sensor system also includes signal processing circuitry (138) to determine rms surface roughness of wafer (10) at a known reference temperature from the change in reflectance of wafer (10) resulting from modulation of the wavelengths of the first and second laser beams, and to determine the temperature of wafer (10) from the change in specular reflectance of wafer (10) resulting from modulation of the wavelengths of the first and second laser beams while wafer (10) is at an unknown temperature and the surface roughness of the wafer at the known temperature.

公开(公告)号：WO2011072153A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059748

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.

Abstract translation: 提供背面接头三维太阳能电池及制造方法。 背面接触背面接合三维太阳能电池包括三维基板。 衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。 背面钝化层位于掺杂背侧发射极区域上。 连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

公开(公告)号：WO2010057060A2

公开(公告)日：2010-05-20

申请号：PCT/US2009064484

申请日：2009-11-13

Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L29/04 ,  H01L21/306

CPC classification number: H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

Abstract: Methods and systems for manufacturing thin-film solar cells utilizing a template having inverted pyramidal cavities defined by a plurality of walls aligned along a (111) crystallographic orientation plane and methods for manufacturing the template. Methods and systems for manufacturing thin-film solar cells utilizing a 3-D TFSS having a plurality of ridges on the surface of the semiconductor substrate defining a base opening of an inverted pyramidal cavity and walls defining an inverted pyramidal cavity and methods for manufacturing the 3-D TFSS. A 3-D TFSC comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity and methods for manufacturing the 3-D TFSC.

Abstract translation: 利用具有由沿（111）晶体取向平面排列的多个壁限定的倒金字塔形腔的模板和用于制造模板的方法来制造薄膜太阳能电池的方法和系统。 利用三维TFSS制造薄膜太阳能电池的方法和系统，所述三维TFSS在半导体衬底的表面上具有多个脊，限定倒金字塔形腔的基底开口，并且所述壁限定倒金字塔形腔，以及用于制造3 -D TFSS。 一种三维TFSC，包括具有倒金字塔形腔体的半导体衬底，在所述半导体衬底的表面上的限定所述倒金字塔形腔的开口的脊上的发射极金属化区域以及形成所述倒金字塔形顶点的区域上的基底金属化区域 倒金字塔腔和用于制造3-D TFSC的方法。

公开(公告)号：WO2015017592A3

公开(公告)日：2015-03-26

申请号：PCT/US2014048989

申请日：2014-07-30

Applicant: SOLEXEL INC ,  STALCUP THOM ,  MOSLEHI MEHRDAD M ,  PAWAN KAPUR ,  KAMRAN MANTEGHI ,  DUTTON DAVID

Inventor： STALCUP THOM ,  MOSLEHI MEHRDAD M ,  PAWAN KAPUR ,  KAMRAN MANTEGHI ,  DUTTON DAVID

IPC: H01L31/18 ,  B23K26/36

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  Y02E10/547

Abstract: A back contact solar cell structure having a light receiving frontside and a metallized backside of on-cell patterned base and emitter metallization electrically connected to base and emitter regions on a back contact solar cell semiconductor substrate. A backplane laminate layer made of resin and fibers and having a coefficient of thermal expansion relatively matched to the back contact solar cell semiconductor substrate is attached to the on-cell base and emitter metallization and to portions of the back contact solar cell semiconductor substrate not covered by the on-cell base and emitter metallization.

Abstract translation: 一种背接触太阳能电池结构，其具有光接收前侧和金属化的背侧上的电池上图案化的基极和发射极金属化部，其电连接到背接触太阳能电池半导体基板上的基极和发射极区。 将由树脂和纤维制成并且具有与背接触太阳能电池半导体衬底相对匹配的热膨胀系数的背板层压板层附接到on-cell基极和发射极金属化部，并且将背接触太阳能电池半导体衬底的部分未覆盖 通过on-cell基极和发射极金属化。

公开(公告)号：WO2013022479A3

公开(公告)日：2013-05-16

申请号：PCT/US2012000348

申请日：2012-08-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/03765 ,  H01L31/0392 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1812 ,  H01L31/1896 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供用于太阳能电池基板增强和电互连以及用于形成薄膜背接触太阳能电池的制造方法和结构。

公开(公告)号：WO2012166749A3

公开(公告)日：2013-03-28

申请号：PCT/US2012039901

申请日：2012-05-29

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.

Abstract translation: 在薄膜半导体太阳能电池上形成背接触薄膜太阳能电池。 优选地，薄膜半导体材料包括晶体硅。 通过离子注入和退火工艺形成发射极区域，选择性发射极区域和背表面场。

公开(公告)号：WO2011156657A3

公开(公告)日：2012-06-28

申请号：PCT/US2011039877

申请日：2011-06-09

Applicant: SOLEXEL INC ,  KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

Inventor： KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

Abstract translation: 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

公开(公告)号：WO2011082371A3

公开(公告)日：2011-11-17

申请号：PCT/US2010062614

申请日：2010-12-30

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI

IPC: H01L21/677 ,  H01L21/683

CPC classification number: H01L21/6833 ,  G03F7/70708 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/6831 ,  H01L21/76251 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76879 ,  H02N13/00 ,  Y02P80/30

Abstract: In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.

Abstract translation: 在一个实施例中，提供了一种载体，其包括顶部半导体层，该顶部半导体层具有隔离的正电极区域和隔离的负电极区域，所述隔离的负电极区域通过顶部半导体层至少分离到位于顶部半导体层和底部 半导体层。 电介质层覆盖载体的顶部暴露表面。 至少通过底部半导体层的背面沟槽至绝缘层形成对应于正面正极和负极区域的隔离的背侧区域。 位于底部半导体层上并且耦合到正极和负极区域的背面触点允许前侧电极区域的电荷。