公开(公告)号：JPH10193257A

公开(公告)日：1998-07-28

申请号：JP31890797

申请日：1997-11-04

Applicant: MOTOROLA INC

Inventor： ADAM MANZONI ,  RON C SPINER

IPC: B24B37/00 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To prevent a reverse flow of a constitutional element of individual slurry by a check valve in a distribution system, prevent mixing of a constitutional element through a separate distribution line, prevent solidification, and mix a manifold piece element in the vicinity as near as possible of a polishing roller. SOLUTION: A polishing machine distribution feeds an abrasive constitutional element from a vessel through check valves 164, 166, these constitutional elements are distributed through a part of manifold 168, to be mixed in a groove by a mixed element. This mixed abrasive is distributed to a polishing roller 132 by a partially divided flexible supply pipe 170. By mixing the constitutional element in the vicinity as near as possible of the check valve and a distribution point, the abrasive is prevented from being solidified in a distribution line, a line seal by generation of a particle is prevented. Only a part of pipe of a polishing system is exposed in the mixed abrasive, and since manufacturing cost of a pipe is low, even if solidification easily occurs, replacement can be performed at a low cost.

公开(公告)号：JPH1128658A

公开(公告)日：1999-02-02

申请号：JP19984598

申请日：1998-06-29

Applicant: MOTOROLA INC

Inventor： SAN C KIM ,  REI PIN RAI ,  RAJIBU BAJAJI ,  ADAM MANZONI

IPC: B24B37/04 ,  B24B37/10 ,  B24B37/22 ,  H01L21/00 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a CMP method which improves the polishing uniformity at the center and between the edges of a semiconductor wafer, and increases the controllability of the polishing speed. SOLUTION: In a chemical mechanical type polishing(CMP) method, a polishing pad 21 and an under bad 20 are used. The under pad 20 has the edge parts 24 and the center part 22. The center part 22 has either a Shore D hardness lower than the Shore D hardness at the parts 24, a slurry absorbing property higher than that at the edge parts 24, or a contractile property higher than the edge parts 24. This compound material of under pad 20 improves the polishing uniformity of the semiconductor wafer 39. Adding to that, by using the polishing pads 20 and 21, a final wafer section controllability higher than that obtained formally can be accomplished.