公开(公告)号：JPH10270399A

公开(公告)日：1998-10-09

申请号：JP9396298

申请日：1998-03-23

Applicant: MOTOROLA INC

Inventor： RAJIIBU BAHA ,  HANOS FARKAS ,  SAN C KIM ,  JAIMU SARABIA

IPC: H01L21/304 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To polish two different conductive layers effectively for higher cost effectiveness by covering the first conductive layer filling an opening with the second conductive layer, polishing the second conductive layer using the first abrasive fluid to expose a part of the first conductive layer, and then polishing the first conductive layer using the second abrasive fluid. SOLUTION: A titanium layer 256 is deposited in a via opening to form a plug, and then a tungsten layer 258 is deposited as plug packing material. The first abrasive slurry comprising, preferably, acid ferric nitrate, water, alumina abrasive particles is sucked up from a vessel, and applied to a platen while passing a supply line and manifold. Thus, after the tungsten layer 258 is removed from a part other than via opening, the slurry is changed over to remove the titanium layer 256. In short, the second abrasive slurry comprising, preferably, oxalic acid, water, alumina abrasive particles is applied to the platen while passing the supply line and manifold from the vessel.

公开(公告)号：JPH1128658A

公开(公告)日：1999-02-02

申请号：JP19984598

申请日：1998-06-29

Applicant: MOTOROLA INC

Inventor： SAN C KIM ,  REI PIN RAI ,  RAJIBU BAJAJI ,  ADAM MANZONI

IPC: B24B37/04 ,  B24B37/10 ,  B24B37/22 ,  H01L21/00 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a CMP method which improves the polishing uniformity at the center and between the edges of a semiconductor wafer, and increases the controllability of the polishing speed. SOLUTION: In a chemical mechanical type polishing(CMP) method, a polishing pad 21 and an under bad 20 are used. The under pad 20 has the edge parts 24 and the center part 22. The center part 22 has either a Shore D hardness lower than the Shore D hardness at the parts 24, a slurry absorbing property higher than that at the edge parts 24, or a contractile property higher than the edge parts 24. This compound material of under pad 20 improves the polishing uniformity of the semiconductor wafer 39. Adding to that, by using the polishing pads 20 and 21, a final wafer section controllability higher than that obtained formally can be accomplished.

公开(公告)号：JPH1116877A

公开(公告)日：1999-01-22

申请号：JP17965998

申请日：1998-06-10

Applicant: MOTOROLA INC

Inventor： REI PIN RAI ,  SAN C KIM

IPC: B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To realize a long life of a pad, rapid polishing velocity and improvement of velocity stability by executing conditioning of a polishing pad in a field before polishing is finished while a board is on a pad. SOLUTION: In the embodiment, field conditioning is finished before a polishing process is finished; however, conditioning of a polishing pad 22 by using a conditioner 29 is started about one minute before a board 27 attains the pad 22. After one minute passed, conditioning is executed while a semiconductor element board 27 with an insulation layer is polished. After about one and a half minutes, conditioning is finished and polishing is further continued for about one minute. Since both a second conditioning arm and a second conditioner can be used, polishing function can be enlarged and conditioning is possible outside a site.

公开(公告)号：JPH10199839A

公开(公告)日：1998-07-31

申请号：JP36706797

申请日：1997-12-24

Applicant: MOTOROLA INC

Inventor： SAN C KIM ,  RAJIV BAJAJI ,  ZALESKI MARK A

IPC: H01L21/304 ,  B24B37/24 ,  B24D13/12 ,  B24D13/14

Abstract: PROBLEM TO BE SOLVED: To polish two different substances at high cost efficiency by preparing a polisher having a pad with a specified Shore D hardness, placing a semiconductor element substrate on the pad, and polishing a semiconductor substrate to condition the pad. SOLUTION: A semiconductor element substrate 27 is held with a polishing arm, moved onto a polishing platen 22, rotated and pressed to the platen and polished. During polishing of the substrate 27 a conditioning arm 28 presses a conditioning disc 29 against a polishing pad and vibrates from the center of the edge the platen 22 to the edge, thereby removing a layer to be polished. The substrate 27 is finished and moved onto a finish platen 24 and polished. On this platen 24, residual polishing grains are removed, using a high-softness pad. The polishing pad has a Shore D hardness of about less than 45. Thus two different substances are polished at high cost efficiency.