公开(公告)号：CA1172712A

公开(公告)日：1984-08-14

申请号：CA392983

申请日：1981-12-22

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G ,  JARRETT ROBERT B

IPC: H03K3/282 ,  H03K3/0231 ,  H03K4/502 ,  H03K4/50

Abstract: CURRENT OUTPUT OSCILLATOR An integrated circuit current-output relaxation oscillator utilizes an internal or external capacitor which is alternately charged from +VBE to a predetermined upper trip point and then discharged to +VBE. A control current proportional to the voltage across the capacitor is generated and compared with a reference current. When the control current achieves a predetermined value with respect to the reference current, a transistor is turned on permitting the capacitor to discharge to +VBE. The control current is generated by the same current mirror circuit which generates the oscillating output current and is either equal or proportional thereto. Therefore, the magnitude of the oscillating output current is dominantly proportional to the magnitude of the reference current, and the frequency of oscillation is dominantly dependent on passive components, i.e. a resistor and a capacitor.

公开(公告)号：IT8247541D0

公开(公告)日：1982-01-12

申请号：IT4754182

申请日：1982-01-12

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G

IPC: H03K5/08 ,  H03K17/30 ,  H01L

Abstract: A comparator circuit cell has an output which switches between first and second states when an input voltage (or current) reaches a controlled trip point having a controllable positive, zero or negative temperature coefficient. First and second common emitter transistors are forced to operate at different emitter current densities at the trip point thus requiring the operation of a DELTA VBE across a first resistor coupled between the bases of the first and second transistors in order to get the circuit output to switch. The positive temperature coefficient current which flows through the first resistor to generate DELTA VBE is summed at the base of the second transistor with a negative temperature coefficient current flowing through a second resistor. This creates a required input current having a controllable magnitude and temperature coefficient. The input current may be provided through an additional resistor to the base of the second transistor to create a voltage input trip point having a controllable magnitude and temperature coefficient.

公开(公告)号：HK23491A

公开(公告)日：1991-04-04

申请号：HK23491

申请日：1991-03-26

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G

IPC: H02H3/10 ,  H02H7/20 ,  H03K17/08 ,  H03K17/60 ,  H02H3/02 ,  G05F1/569

Abstract: A three terminal integrated low-resistant series switch circuit (10) which buffers load electronics from extreme input voltage conditions. The circuit comprises a series pass transistor (20) the conductivity of which is controlled by control circuitry (22, 24, 28, 32) in cooperation with feedback control (36). In response to the input exceeding a predetermined operating potential the series pass transistor is driven toward saturation and is maintained in this state by feedback whereby only that load current required by the load electronics is supplied for increased efficiency. The control circuitry is responsive to the signal at the input thereof exceeding a predetermined level for rendering the series pass transistor nonconducting to protect the load electronics from extreme voltage excursions. A feature of the circuit is that the epitaxial layer within which the control circuit is formed is operated at a lower voltage than that of the substrate.

公开(公告)号：HK75989A

公开(公告)日：1989-09-29

申请号：HK75989

申请日：1989-09-21

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G ,  JARRETT ROBERT B

IPC: H03K3/282

公开(公告)号：IT1182190B

公开(公告)日：1987-09-30

申请号：IT4766885

申请日：1985-02-12

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G ,  CAVE DAVID L

IPC: G05F3/30 ,  H03K17/082 ,  H03K17/14 ,  H01L

Abstract: A thermal shut-down circuit is provided that is monolithically integrated in a power BIMOS process wherein a vertical power PNP output transistor comprises a P-type substrate as a collector. The circuit compensates for vertical currents injected from the P-substrate into lateral transistors. A first PNP transistor has an emitter connected to a first resistor and conducts a first current. A second PNP transistor has an emitter connected to a second resistor and conducts a second current. A third resistor has one terminal coupled to the emitter of the second transistor. A fourth resistor is coupled in series with an output means, the combination thereof being coupled in parallel with the second and third resistors.

公开(公告)号：IT1181951B

公开(公告)日：1987-09-30

申请号：IT4787185

申请日：1985-03-26

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G ,  CAVE DAVID L

IPC: H03K17/14 ,  H03K17/567 ,  G05F

Abstract: A compensation circuit for stabilization of a circuit node coupled to an integrated circuit substrate by a parasitic capacitance of a value C1 has a displacement current substantially equal to C1 dv/dt. A switching device having a gain beta can either supply a current to, or draw a current from, the circuit node substantially equal to C2 beta dv/dt which is greater than the displacement current thereby obviating oscillation of an integrated circuit output due to capacitive coupling of the substrate to sensitive circuit nodes.

公开(公告)号：WO1982002629A1

公开(公告)日：1982-08-05

申请号：PCT/US1981001656

申请日：1981-12-14

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  BYNUM BYRON G ,  JARRETT ROBERT B

IPC: H03K03/282

CPC classification number: H03K4/502 ,  H03K3/0231

Abstract: Un oscillateur a courant de sortie a circuit integre utilise un condensateur (C) interne ou externe qui est charge alternativement depuis +VBE a un point de declenchement superieur predetermine, puis decharge a +VBE. Une intensite de controle (Icnt) proportionnelle a la tension aux bornes du condensateur est generee et comparee avec une intensite de reference (Iref). Lorsque l'intensite de controle (Icnt) atteint une valeur predeterminee par rapport a l'intensite de reference (Iref), un transitor (Q4) est branche, permettant ainsi la decharge du condensateur (C) a +VBE . L'intensite de controle (Icnt) est generee par le meme circuit miroir (2) que celui qui engendre l'intensite oscillante de sortie (Iout) et est soit egale ou proportionnelle a cette derniere. Ainsi l'intensite de sortie oscillante (Iout) est, de facon predominante, proportionnelle a l'intensite de reference (Iref), et la frequence d'oscillation depend des composants passives, a savoir une resistance (R1) et un condensateur (C).

公开(公告)号：HK100895A

公开(公告)日：1995-06-30

申请号：HK100895

申请日：1995-06-22

Applicant: MOTOROLA INC

Inventor： CAVE DAVID L ,  BYNUM BYRON G

IPC: H03K17/64 ,  F02P3/12 ,  H01H47/32 ,  H02G3/20 ,  H02G9/04 ,  H02H3/20 ,  H03K3/26 ,  H03K17/08 ,  H03K17/0814

Abstract: An integrated circuit comprising a series pass transistor for sourcing current from the positive side of a battery to an inductive load includes integrated circuitry for providing a direct current conduction path between ground and the inductive load as the series pass transistor is turned off by the battery being disconnected therefrom during normal operation so that the stored inductive energy of the inductive load is dissipated. The integrated circuitry includes a silicon controlled rectifier (SCR) coupled between the output of the integrated circuit and ground as well as a Zener diode coupled between the gate and anode of the SCR.

公开(公告)号：HK17094A

公开(公告)日：1994-03-11

申请号：HK17094

申请日：1994-03-03

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G ,  CAVE DAVID L

IPC: H01L27/04 ,  H01L27/06 ,  H01L29/72

公开(公告)号：IT1199945B

公开(公告)日：1989-01-05

申请号：IT4766985

申请日：1985-02-12

Applicant: MOTOROLA INC

Inventor： BYNUM BYRON G ,  CAVE DAVID L

IPC: H03K17/082 ,  H01L

Abstract: Circuitry is provided for current limiting the output current of a power substrate PNP transistor comprised of a plurality of emitters (e.g. 260). A resistor is placed between a fraction of the plurality of emitters (e.g. 8) and a source of supply voltage. When the power device is turned on, the current is drawn through the resistor causing a voltage drop thereacross. This voltage drop is monitored and when it reaches a certain level, a control signal is generated which ultimately results in limiting the conducted current of the power transistor.