公开(公告)号：AU7491301A

公开(公告)日：2002-01-14

申请号：AU7491301

申请日：2001-05-21

Applicant: MOTOROLA INC

Inventor： FEKETE DOUGLAS D ,  OOMS WILLIAM J

IPC: H01L21/20 ,  H01L21/316 ,  H01L21/30 ,  H01L21/31 ,  H01L21/36 ,  H01L21/46 ,  H01L21/469 ,  H01L23/10 ,  H01L23/58 ,  H01L31/0328

Abstract: Semiconductor structures including compound semiconductor devices formed in semiconductor substrates and methods of producing the semiconductor devices and substrates that have improved thermal characteristics over conventional compound semiconductor devices and that may be formed substantially thinner than conventional semiconductor devices and substrates. The compound devices (1010) are formed in a layer of compound semiconductor material (1020) which overlies an accommodating layer (1030). The accommodating layer (1030) overlies a monocrystalline silicon semiconductor layer (1040). During the fabrication process, the silicon layer may be thinned by suitable methods, or removed entirely by chemical etching. When the silicon is removed by etching, the accommodating layer provides an etch-stop layer to protect the devices in the compound semiconductor layer.