公开(公告)号：JP2000323436A

公开(公告)日：2000-11-24

申请号：JP2000051583

申请日：2000-02-28

Applicant: MOTOROLA INC

Inventor： DENNING DEAN J ,  GARCIA SAM S ,  SMITH BRADLEY P ,  LOOP DANIEL J ,  HAMILTON GREGORY NORMAN ,  ISLAM MOHAMMED RABIUL ,  BRIAN G ANTHONY

IPC: C23C14/14 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To manufacture a great amount of copper interconnection parts at lower costs, and enhance yield and reliability by a method wherein power for both a sputtering target and a coil is controlled between the stacks of barrier layers. SOLUTION: After a wafer is disposed in a chamber 40 and the chamber is stabilized, power of, for example, 1000 W is applied on a target 48, and this power is continuously applied between the stacks of barrier layers. First, power of, for example, about 1000 W is supplied to the target 48, and substantially simultaneously power of, for example, about 1500 W is supplied to a coil 52. Namely, an initial part of the barrier film is deposited between high coil powering sequences, and the other part of the barrier film is deposited between low coil power or zero coil powering sequences. Accordingly, the power to the coil is selectively controlled between the stacks of the barrier film, whereby it is possible to design the stress of the barrier film in accordance with each stress of upside and downside layers.