METHOD FOR POLISHING DIFFERENT CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE

    公开(公告)号:JPH10270399A

    公开(公告)日:1998-10-09

    申请号:JP9396298

    申请日:1998-03-23

    Applicant: MOTOROLA INC

    Abstract: PROBLEM TO BE SOLVED: To polish two different conductive layers effectively for higher cost effectiveness by covering the first conductive layer filling an opening with the second conductive layer, polishing the second conductive layer using the first abrasive fluid to expose a part of the first conductive layer, and then polishing the first conductive layer using the second abrasive fluid. SOLUTION: A titanium layer 256 is deposited in a via opening to form a plug, and then a tungsten layer 258 is deposited as plug packing material. The first abrasive slurry comprising, preferably, acid ferric nitrate, water, alumina abrasive particles is sucked up from a vessel, and applied to a platen while passing a supply line and manifold. Thus, after the tungsten layer 258 is removed from a part other than via opening, the slurry is changed over to remove the titanium layer 256. In short, the second abrasive slurry comprising, preferably, oxalic acid, water, alumina abrasive particles is applied to the platen while passing the supply line and manifold from the vessel.

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