Abstract:
PROBLEM TO BE SOLVED: To provide the method of growing gallium nitride on a spinel substrate, where a plurality of buffer layers are utilized, at low cost, and to provide a method in which the rate of lattice mismatch, pertaining to a spinel substrate, and dislocation density can be reduced. SOLUTION: A supporting substrate 12 is prepared, a plurality of buffer layers 14 are positioned on one surface of the supporting substrate 12, and gallium nitride is grown on the spinel substrate. The plural buffer layers contain a first buffer layer 15 consisting of aluminum oxynitride(ALON) having a low mismatch rate against the spinel substrate. A second buffer layer 16 is positioned on the first buffer layer, and the layer 16 contains a plurality of layers 17 consisting of low dislocation density crystal ALON. A third buffer layer 18 consisting of aluminum nitride is positioned on the second buffer layer 16, and a fourth buffer layer 20 consisting of gallium nitride is positioned on the third buffer layer 18. A photonic device structure 22 is formed on the fourth buffer layer 20.
Abstract:
PROBLEM TO BE SOLVED: To integrate a driver circuit for driving an LED array and a large LED array while reducing the are of semiconductor chip required for the large scale element array. SOLUTION: An LED array 14 on a substrate 12 is provided with row and column connection pads being led to display connection pads 22 arranged on the uppermost surface on an LED array element 10. An independent silicon driver element 25 is provided with connection pads 28 being led to the uppermost surface and arranged to be aligned with the connection pads 22 of the LED array element 10 in con junction therewith when they are stacked correctly. The LED array element 10 is jointed to the driver element 25 through flip-chip bumps using a standard C5DCA. An underfill layer is arranged in a space defined by the LED array element 10 and the driver element 25. The substrate 12, on which the LED array is formed originally, is then removed selectively. Light is emitted from the LED array element 10 through the residual indium phosphide-gallium-aluminum.
Abstract:
PROBLEM TO BE SOLVED: To integrate a driver circuit for driving an LED array and a large LED array while reducing the are of semiconductor chip required for the large scale element array. SOLUTION: The LED display package comprises an LED array chip 10 and an independent driver chip 20. The LED array chip 10 is provided, along the periphery thereof, with connection pads 16. The driver chip 20 is provided with connection pads 28 to be engaged with the connection pads 16 of the LED array chip 10. The LED array chip 10 is fixed, in flip-chip, to the driver chip 20 through an interchip bonding dielectric layer. A substrate 12, on which the LED array is formed originally, is then removed from the display package to expose the connection pads 16 of the LED array chip 10 and the residual InGaAlP epitaxial layer. Light is emitted from the LED array chip 10 through the residual InGaAlP epitaxial layer.
Abstract:
A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (10). The method comprises forming a first mirror (16) over the substrate (10). A plurality of etalon material layers (32, 34, 36, 38) are formed over the mirror (16), and a plurality of etch stop layers (42, 44, 46) are formed, one each between adjacent etalon material layers (32, 34, 36, 38). A photoresist is patterned to create an opening (54) over the top etalon material layer (38) and an etch (56) is performed down to the top etch stop layer (46). An oxygen plasma (58) may be applied to convert the etch stop layer (46) within the opening (54) to silicon dioxide (57). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (82, 84, 86, 88). A second mirror (72) is then formed on each of the levels (82, 84, 86, 88).