公开(公告)号：JPH10215026A

公开(公告)日：1998-08-11

申请号：JP36843397

申请日：1997-12-25

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting laser which enhances a lattice matching property, by using a metallic substrate and which can be emitted at an ultraviolet/blue/green visible spectrum. SOLUTION: In an ultraviolet/blue/green vertical cavity surface emitting laser(VCSEL) 10, a VCSEL structure is formed on a metallic single-crystal substrate 12 so as to store data at high density. The metallic single-crystal substrate 12 is used as a rear reflecting mirror, and it acts together with an aluminum gallium nitride/gallium nitride distributed Bragg reflector 20 so as to increase the total reflectance of the VCSEL laser 10. The metallic substrate 12 is made of a substance such as nickel, aluminum or the like. As a result, it is possible to enhance a lattice matching property with a contained III nitride material.

公开(公告)号：JP2001223211A

公开(公告)日：2001-08-17

申请号：JP2000375552

申请日：2000-12-11

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  WANG JUN ,  DROOPAD RAVINDRANATH ,  RAMDANI JAMAL

IPC: H01L21/20 ,  C30B23/02 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a thin and stable crystalline interface on a silicon substrate. SOLUTION: The forming method of a semiconductor structure is constituted of a stage that a silicon substrate 10 having the surface 12 is provided, a stage that an interface 14 consisting of a single silicon atomic layer, a single nitrogen atomic layer and a single metal atomic layer is formed on the surface of the substrate 10 and a stage that more than one layer of single crystal oxide layers 26 are formed on the interface. The interface consists of a silicon atomic layer, a nitrogen atomic layer and a metal atomic layer in the form of an MSiN2. Provided that, the M is a metal. In a second embodiment, the interface consists of an atomic layer containing the mixture of a silicon with a metal and the mixture of nitrogen with oxygen in the form of an MSi[N1-xOx]2. Provided that, the M is a metal and the (x) is used on the condition of 0

公开(公告)号：JPH10256656A

公开(公告)日：1998-09-25

申请号：JP4620598

申请日：1998-02-10

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01S3/02 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To obtain a vertical cavity surface emitting laser attaining a high reflectivity, by arranging a second contact layer on a second cladding region, and arranging a dielectric mirror stack on the second contact layer. SOLUTION: An N-doped gallium phosphide layer of DBR mirror structure 10, i.e., an N-contact layer 18 is fusion welded on the uppermost surface of a second cladding region 36 of an active VCSEL element. A VCSEL 40 is defined in a second contact layer, a first cladding layer 30 and an active region. Conductive material is arranged on the second contact layer 28, and a P-electric contact 48 is formed. Conductive material is arranged on the contact layer 18, and an N-electric contact is formed. After that, a P-metal contact 48 is deposited on the contact layer 28 in such a manner that a laser emitting aperture 52 is left in an open state. Concerning the first contact layer 18, an N-metal layer 50 is deposited in the same manner as the second cladding layer 36 surface. Finally, a second distributed Bragg-reflector 42, i.e., dielectric mirror structure is deposited on the second contact layer 28.

公开(公告)号：JPH10313149A

公开(公告)日：1998-11-24

申请号：JP13140998

申请日：1998-04-23

Applicant: MOTOROLA INC

Inventor： JIANG WENBIN ,  RAMDANI JAMAL ,  MAIER S LEVY

IPC: H01S5/00 ,  H01S5/062 ,  H01S5/10 ,  H01S5/183 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a VCSEL(vertical cavity surface emission laser) which can be used for a high-speed light communication and is high in reliability and a manufacturing method thereof. SOLUTION: A VCSEL 1O includes a substrate 12, a first mirror stack 14, and an active region 20 composed of a first cladding region 21 adjacent to the mirror stack 14, a second cladding region 25, and an island-like active structure 23 sandwiched in between the cladding regions 24 and 25, wherein the first mirror stack 14 is lattice-matched to the active region 20. The island- like active structure 23 includes island-like structures and a second mirror stack 26 lattice-matched to the second cladding region 25. The island-like active structure 23 is formed through, such a manner that material layers of different band gaps are epitaxially grown and then exposed to high temperatures into an island-like structure composed of separated materials of different band gaps.

公开(公告)号：JP2001223215A

公开(公告)日：2001-08-17

申请号：JP2000375553

申请日：2000-12-11

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  WANG JUN ,  DROOPAD RAVINDRANATH ,  DEMDOV ALEXANDER ,  HALLMARK JERALD ALLAN ,  RAMDANI JAMAL

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a thin and stable crystalline interface on a silicon substrate. SOLUTION: A semiconductor structure consists of a silicon substrate 10, more than one layer of single crystal oxide layers or nitride layers 26 and the interface 14 between the substrate 10 and the more than one layer of the single crystal oxide layers or the nitride layers and this interface is made of a crystalline material of a grating constant to coincide with that of the silicon substrate. The interface consists of a silicon atomic layer, a nitrogen atomic layer and a metal atomic layer in the form of MSiN2, where M is a metal. In a second embodiment, the interface consists of an atomic layer containing the mixture of a silicon with a metal and the mixture of nitrogen with oxygen in the form of MSi[N1-xOx]2, where M is a metal and (x) and 0

公开(公告)号：JPH10256655A

公开(公告)日：1998-09-25

申请号：JP5880498

申请日：1998-02-24

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a vertical cavity surface emission laser improved to emit a long wavelength light. SOLUTION: The VCSEL 10 for emitting a long wavelength light comprises a first mirror stack 14 including a GaAs/AlGaAs based mirror part having a grating matched with that of a GaTlP region 20 including an active region 23 sandwiched by a first cladding region 24 contiguous to the first mirror stack 14 and a second cladding region 25, an active structure 23 having a quantum well, and a second mirror stack 26 having a grating matched with that of the second cladding region 25 and including a GaAs/AlGaAs based mirror pair.

公开(公告)号：JPH10247626A

公开(公告)日：1998-09-14

申请号：JP1193298

申请日：1998-01-05

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  HOLM PAIGE M

IPC: C30B29/38 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide the method of growing gallium nitride on a spinel substrate, where a plurality of buffer layers are utilized, at low cost, and to provide a method in which the rate of lattice mismatch, pertaining to a spinel substrate, and dislocation density can be reduced. SOLUTION: A supporting substrate 12 is prepared, a plurality of buffer layers 14 are positioned on one surface of the supporting substrate 12, and gallium nitride is grown on the spinel substrate. The plural buffer layers contain a first buffer layer 15 consisting of aluminum oxynitride(ALON) having a low mismatch rate against the spinel substrate. A second buffer layer 16 is positioned on the first buffer layer, and the layer 16 contains a plurality of layers 17 consisting of low dislocation density crystal ALON. A third buffer layer 18 consisting of aluminum nitride is positioned on the second buffer layer 16, and a fourth buffer layer 20 consisting of gallium nitride is positioned on the third buffer layer 18. A photonic device structure 22 is formed on the fourth buffer layer 20.

公开(公告)号：JPH10215025A

公开(公告)日：1998-08-11

申请号：JP36843297

申请日：1997-12-25

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  PHILIP KERRY

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a visible-light-emitting vertical cavity surface emitting laser which comprises an easily doped contact layer and whose structural maintainability can be obtained. SOLUTION: A first distributed Bragg reflector stack 44 is arranged on the surface 43 of a semiconductor substrate 42. The stack 44 contains a plurality of alternating layers 45 made of substances whose refractive index is alternating, and the stack comprises a first dopant type. A first cladding region 48 is arranged on the stack 44, and an active region 54 is arranged on the first cladding region 48. The active region 54 comprises at least two barrier layers 56, 58 and a quantum well layer 60, a second cladding region 62 is arranged on the active region 54, and a second distributed Bragg reflector stack 68 is arranged on the cladding region 62. A contact region 62 is formed on the second distributed Bragg reflector stack 68. The contact region 72 contains a doped gallium phosphide substance.

公开(公告)号：JP2001189312A

公开(公告)日：2001-07-10

申请号：JP2000322458

申请日：2000-10-23

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  YU ZHIYI JIMMY

IPC: C30B29/16 ,  C30B25/02 ,  H01L21/24 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/108 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor structure with which a thin stable silicide interface with silicon can be manufactured. SOLUTION: This method of manufacturing semiconductor structure comprises a step of providing a silicon substrate 10 having a surface 12, a step of forming seed layers 20 and 20' composed of silicide materials on the surface 12 of the substrate 10 by atomic layer deposition(ALD), and a step of forming one or more layers of an oxide 40 having a high dielectric constant on the seed layers 20 and 20' by atomic layer deposition(ALD).

公开(公告)号：JP2001068469A

公开(公告)日：2001-03-16

申请号：JP2000213905

申请日：2000-07-14

Applicant: MOTOROLA INC

Inventor： DROOPAD RAVINDRANATH ,  YU ZHIYI ,  RAMDANI JAMAL

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a high permitting oxide on a semiconductor structure having a low leak current density. SOLUTION: The semiconductor structure forming method comprises a step of providing an Si substrate 10 having a surface, a step of forming an interface involving an adjacent seed layer 18 on the surface of the Si substrate 10, a step of forming a buffer layer 20 utilizing molecules of O, and a step of forming one or more high permittivity oxide layers 22 on the buffer layer 20 utilizing active O.