公开(公告)号：JPH10284717A

公开(公告)日：1998-10-23

申请号：JP10041098

申请日：1998-03-27

Applicant: MOTOROLA INC

Inventor： ORUBANMI ORUFUEMI ADETSUTSU ,  DENNING DEAN J ,  JAMES D HEYDEN ,  CHITORA K SABURAMANIAN ,  AAKARUGADO R SHITARAM

IPC: H01L29/43 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/205 ,  H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8247 ,  H01L27/108 ,  H01L27/11 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To enable the formation of a metal semiconductor, without requiring special processes or substances by controlling the increase in thickness and change of dielectric constant of a gate dielectric layer, thus preventing the increase in the thickness of the gate dielectric layer, and causing the metal semiconductor layer to have good adhesiveness to the gate dielectric layer, since fluorine causes increases in the thickness of the gate dielectric layer and the change of dielectric constant of the gate dielectric layer in the manufacture of a semiconductor having a metalsemiconductor layer. SOLUTION: A metal semiconductor layer 26 is formed on an insulating layer 20, thereby gradually changing the quantity of semiconductor and metals across the metal semiconductor layer 26. In this case, the metal semiconductor layer 26 has a relatively high silicon concentration near its upper surface and bottom surface. In other cases, a metal-semiconductor-nitride layer contains nitrogen near its bottom surface and contains substantially no nitrogen near its upper surface. The layer 26 is formed by using chemical vapor deposition or sputtering.