公开(公告)号：US3911426A

公开(公告)日：1975-10-07

申请号：US52057874

申请日：1974-11-04

Applicant: MOTOROLA INC

Inventor： MOUTON ALCEE GONZAGUE ,  PSHAENICH ALVIN

IPC: G09G3/18 ,  G08B5/36

CPC classification number: G09G3/18

Abstract: This accessing circuitry allows conventional multiplexing techniques to be used in a system with a liquid crystal display having a plurality of digits, each digit having a plurality of segments and a back plane. The circuitry includes a source of information to be supplied to the array. A plurality of enabling gates is provided, one for each segment and one for the back plane for each digit of the liquid crystal display. A decoder/driver is connected between the source of information and the enabling gates for the segments of the liquid crystal display. Means is provided for supplying drive signals and control pulses to the enabling gates, whereby signals equal but opposite in polarity are applied to selected ones of the segments and their back planes and signals of the same polarity and magnitude are supplied to unselected segments and their back planes. This circuitry allows multiplexing of liquid crystal displays without supplying any direct current (DC) signal component to the liquid crystal cells of the display, thus avoiding degradation of the cells.

Abstract translation: 该访问电路允许常规复用技术用于具有多个数字的液晶显示器的系统中，每个数字具有多个段和后平面。 电路包括要提供给阵列的信息源。 为液晶显示器的每个数位提供多个使能门，每个段为一个，一个为背面。 解码器/驱动器连接在信息源和液晶显示器的段的启用门之间。 提供了用于将驱动信号和控制脉冲提供给使能门的装置，由此将极性相等但相反的信号施加到选定的段中，并且它们的背平面和相同极性和幅度的信号被提供给未选择的段及其后面 飞机 该电路允许液晶显示器的多路复用，而不向显示器的液晶单元提供任何直流（DC）信号分量，从而避免了电池的劣化。

公开(公告)号：DE3275422D1

公开(公告)日：1987-03-12

申请号：DE3275422

申请日：1982-05-03

Applicant: MOTOROLA INC

Inventor： FAY GARY V ,  PSHAENICH ALVIN

IPC: H02H9/02 ,  H02M3/155 ,  H03K17/06 ,  H01H47/32 ,  G05F1/56 ,  H03K17/04

Abstract: A semiconductor current regulating and switching apparatus is described wherein an NMOS enhancement mode power transistor is used in the positive lead to regulate the flow of current from a power source to a load. In order to achieve a low resistance on-state for the NMOS power transistor, the control gate must be biased to a voltage which exceeds the positive voltage of the power source. This bias voltage is generated within the apparatus.

公开(公告)号：IT8248503D0

公开(公告)日：1982-05-25

申请号：IT4850382

申请日：1982-05-25

Applicant: MOTOROLA INC

Inventor： FAY GARY V ,  PSHAENICH ALVIN

IPC: H02M3/155 ,  H02H9/02 ,  H03K17/06 ,  G05F

Abstract: A semiconductor current regulating and switching apparatus is described wherein an NMOS enhancement mode power transistor is used in the positive lead to regulate the flow of current from a power source to a load. In order to achieve a low resistance on-state for the NMOS power transistor, the control gate must be biased to a voltage which exceeds the positive voltage of the power source. This bias voltage is generated within the apparatus.

公开(公告)号：IT1148933B

公开(公告)日：1986-12-03

申请号：IT4850382

申请日：1982-05-25

Applicant: MOTOROLA INC

Inventor： FAY GARY V ,  PSHAENICH ALVIN

IPC: H02M3/155 ,  H02H9/02 ,  H03K17/06 ,  G05F

Abstract: A semiconductor current regulating and switching apparatus is described wherein an NMOS enhancement mode power transistor is used in the positive lead to regulate the flow of current from a power source to a load. In order to achieve a low resistance on-state for the NMOS power transistor, the control gate must be biased to a voltage which exceeds the positive voltage of the power source. This bias voltage is generated within the apparatus.

公开(公告)号：WO1982004349A1

公开(公告)日：1982-12-09

申请号：PCT/US1982000591

申请日：1982-05-03

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  FAY GARY V ,  PSHAENICH ALVIN

IPC: H01H47/32

CPC classification number: H02M3/155 ,  H03K17/06

Abstract: Appareil a commutateur de regulation et de commutation de courant ou un transistor de puissance a mode d'enrichissement de semiconducteur a oxyde metallique a N canaux NMOS est utilise dans le conducteur positif pour reguler le flux de courant s'ecoulant d'une source de puissance a une charge. Afin d'obtenir un etat de commutation 'on' de faible resistance pour le transistor de puissance NMOS, la porte de commande doit etre polarisee sur une tension qui depasse la tension positive de la source de puissance. Cette tension de polarisation est generee dans l'appareil.

公开(公告)号：EP0079937A4

公开(公告)日：1984-09-06

申请号：EP82902002

申请日：1982-05-03

Applicant: MOTOROLA INC

Inventor： FAY GARY V ,  PSHAENICH ALVIN

IPC: H02H9/02 ,  H02M3/155 ,  H03K17/06 ,  H01H47/32 ,  G05F1/56

CPC classification number: H02M3/155 ,  H03K17/06