公开(公告)号：US3734770A

公开(公告)日：1973-05-22

申请号：US3734770D

申请日：1970-12-14

Applicant: MOTOROLA INC

Inventor： PRICE J ,  ROMAN W

IPC: C23C16/24 ,  C23C16/40 ,  B44D1/18

CPC classification number: C23C16/24 ,  C23C16/402 ,  Y10S148/043 ,  Y10S148/114 ,  Y10S148/118 ,  Y10S148/122

Abstract: A PROCESS IS DISCLOSED HEREIN FOR THE USE OF NITROGEN IN A NUCLEATION PROCESS FOR THE CHEMICAL VAPOR DEPOSITION OF POLYCRYSTALLINE SILICON FROM SICL4. AFTER ESTABLISHING THE DESIRED FURNACE TEMPERATURE AT A SINGLE TEMPERATURE LYING WITHIN THE RANGE OF 900*C. TO 1200*C., THE SYSTEM IS PURGED WITH NITROGEN AND HYDROGEN. AFTER THE SYSTEM HAS BEEN PURGED, THE NITROGEN FLOW IS STOPPED AND THE SICL4 FLOW IS STARTED SIMULTANEOUSLY. THE OVERLAP OF NITROGEN AND SICL4 WITHIN THE SYSTEM CAUSES NUCLEATION FROM WHICH A VERY FINEGRAIN LAYER OF POLYCRYSTALLINE SILICON IS GROWN.

公开(公告)号：US3830665A

公开(公告)日：1974-08-20

申请号：US31301072

申请日：1972-12-07

Applicant: MOTOROLA INC

Inventor： ROMAN W ,  WILSON L

IPC: C23F1/00 ,  H01L21/00 ,  H01L21/306 ,  H01L7/50

CPC classification number: H01L21/30604 ,  H01L21/00 ,  Y10S148/051 ,  Y10S148/085

Abstract: A method for etching a groove along a junction between regions of semiconductor material having different dopant concentrations to delineate or isolate the regions forming the junction. Standard concentrations of sirtl etch are used in conjunction with infrared radiation. Wafers in a holder are placed in a container of sirtl etch and exposed to infrared radiation. Preferential etching creates a groove at the semiconductor junction.

Abstract translation: 沿着具有不同掺杂剂浓度的半导体材料的区域之间的接合处蚀刻凹槽以描绘或隔离形成结的区域的方法。 sirtl蚀刻的标准浓度与红外辐射结合使用。 将保持器中的晶片放置在Sirtl蚀刻的容器中并暴露于红外辐射。 优先蚀刻在半导体结处形成凹槽。