公开(公告)号：WO1981003168A1

公开(公告)日：1981-11-12

申请号：PCT/US1981000462

申请日：1981-04-06

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  SARMA K ,  RICE M

IPC: C01B33/107

CPC classification number: C01B33/1071 ,  B01J12/002 ,  B01J2219/0894 ,  Y10S423/10

Abstract: A method for the plasma hydrogenation of SiCl u. A high pressure plasma (16) is utilized to effect a reaction of H u (44) and SiCl u (42) to form HSiCl u and other hydrogenated silicon chlorides which can be separated from H u and HCl by-product by passing the output gases from reactor (50) to condensation apparatus (56).

Abstract translation: SiClu等离子体氢化的方法。 使用高压等离子体（16）来实现H u（44）和SiCl 4（42）的反应以形成HSiClu和其它氢化氯化硅，其可以与H < 通过将来自反应器（50）的输出气体通过冷凝装置（56）将U 2和U 2分解成副产物。

公开(公告)号：WO1981003133A1

公开(公告)日：1981-11-12

申请号：PCT/US1981000449

申请日：1981-04-06

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  SARMA K ,  LESK I ,  RICE M

IPC: B05D01/08

CPC classification number: C23C14/225 ,  C23C16/01 ,  C23C16/513

Abstract: Polycrystalline silicon (84) is deposited on the interior surface of a shaped container (40). The silicon is deposited by reacting hydrogen (31) and a silicon bearing gas (30) in the presence of a high pressure plasma (22). The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.