公开(公告)号：US3798754A

公开(公告)日：1974-03-26

申请号：US25308172

申请日：1972-05-15

Applicant: MOTOROLA INC

Inventor： PRICE J ,  LESK I

IPC: H01L21/205 ,  G01L1/18 ,  H01L21/00 ,  H01L21/306 ,  H01L29/00 ,  H01L29/84 ,  B01J17/00

CPC classification number: H01L29/84 ,  G01L1/18 ,  H01L21/00 ,  H01L21/30608 ,  H01L29/00 ,  Y10S148/05 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S438/928 ,  Y10T29/42 ,  Y10T29/49103

Abstract: A piezoresistive semiconductor strain gage for transforming mechanical stress into a changed resistance of the semiconductor and therefore a changed electrical current therethrough representative of the amount of stress is described. Also described is a method of fabricating the strain gage that is reliable and results in each produced strain gage having the characteristics of all of the others. The strain gage is comprised of a piezoresistive silicon body having enlarged ends. A KOH etch is made in each end and an epitaxial layer is therein. THEREIN. The epitaxial layer is of the same conductivity type as the piezoresistive silicon but is much more heavily doped to provide low resistance paths to solderable contacts connected to the epitaxially grown material. The combination of enlarged ends and reduced center provides stress amplification, resulting in a greater sensitivity of the strain gage.

Abstract translation: 描述了用于将机械应力转换为半导体的改变的电阻并因此代表应力量的变化的电流的压阻半导体应变计。 还描述了制造可靠的应变计的方法，并且导致每个生产的具有所有其它特征的应变计。 应变计包括具有扩大端部的压阻硅体。 在每个端部制造KOH蚀刻，其中存在外延层。 好的 该外延层具有与压阻硅相同的导电类型，但是更加重掺杂以提供连接到外延生长材料的可焊接触点的低电阻路径。 扩大端和减少中心的组合提供了应力放大，导致应变计具有更大的灵敏度。

公开(公告)号：CA932073A

公开(公告)日：1973-08-14

申请号：CA963193

申请日：1966-06-17

Applicant: MOTOROLA INC

Inventor： LESK I

公开(公告)号：SE320129B

公开(公告)日：1970-02-02

申请号：SE631165

申请日：1965-05-14

Applicant: MOTOROLA INC

Inventor： LESK I

IPC: H01L29/808 ,  H01L21/00 ,  H01L21/18 ,  H01L21/22 ,  H01L21/337 ,  H01L29/00 ,  H01L29/73 ,  H01L29/78 ,  H01L29/80 ,  H01L11/14

公开(公告)号：WO1981003133A1

公开(公告)日：1981-11-12

申请号：PCT/US1981000449

申请日：1981-04-06

Applicant: MOTOROLA INC

Inventor： MOTOROLA INC ,  SARMA K ,  LESK I ,  RICE M

IPC: B05D01/08

CPC classification number: C23C14/225 ,  C23C16/01 ,  C23C16/513

Abstract: Polycrystalline silicon (84) is deposited on the interior surface of a shaped container (40). The silicon is deposited by reacting hydrogen (31) and a silicon bearing gas (30) in the presence of a high pressure plasma (22). The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.