公开(公告)号：AU2003238261A1

公开(公告)日：2004-01-19

申请号：AU2003238261

申请日：2003-06-18

Applicant: MOTOROLA INC

Inventor： VONALLMEN PAUL A ,  ZENHAUSERN FREDERIC ,  COLL BERNARD F

IPC: B01D53/32

Abstract: A method of treating a first chemical species in a gas using a plasma, the method including the steps of providing an array of micro-scale cavity discharge devices capable of sustaining the plasma where the first chemical species is capable of flowing proximate to the array of micro-scale cavity discharge devices, wherein the first chemical species is converted to a second chemical species within the plasma.

公开(公告)号：AU2003240520A8

公开(公告)日：2003-12-31

申请号：AU2003240520

申请日：2003-06-04

Applicant: MOTOROLA INC

Inventor： VONALLMEN PAUL A

IPC: H01J7/24 ,  H01J9/18 ,  H01J17/04 ,  H01J37/00

Abstract: A microcavity plasma discharge device comprising a micro-cavity device structure which includes N dielectric material structures wherein N is a whole number greater than or equal to one, each N dielectric material structure including a dielectric spacer region with a first opening wherein the dielectric spacer region is sandwiched therebetween a first dielectric material region with a second opening and a second dielectric material region with a third opening wherein the second opening and the third opening are positioned adjacent to the first opening to form a trench with a width and wherein a first conductive material layer is sandwiched between the dielectric spacer region and the first dielectric material region and a second conductive material layer is sandwiched between the dielectric spacer region and the second dielectric material region.

公开(公告)号：AU2003240520A1

公开(公告)日：2003-12-31

申请号：AU2003240520

申请日：2003-06-04

Applicant: MOTOROLA INC

Inventor： VONALLMEN PAUL A

IPC: H01J7/24 ,  H01J9/18 ,  H01J17/04 ,  H01J37/00

Abstract: A microcavity plasma discharge device comprising a micro-cavity device structure which includes N dielectric material structures wherein N is a whole number greater than or equal to one, each N dielectric material structure including a dielectric spacer region with a first opening wherein the dielectric spacer region is sandwiched therebetween a first dielectric material region with a second opening and a second dielectric material region with a third opening wherein the second opening and the third opening are positioned adjacent to the first opening to form a trench with a width and wherein a first conductive material layer is sandwiched between the dielectric spacer region and the first dielectric material region and a second conductive material layer is sandwiched between the dielectric spacer region and the second dielectric material region.