公开(公告)号：JPH11251457A

公开(公告)日：1999-09-17

申请号：JP36097298

申请日：1998-12-18

Applicant: MOTOROLA INC

Inventor： CRAIG S REEJI ,  MOSUMI BUHATT ,  YON-JU TOM RI ,  ANDREW G NAGY ,  LARRY E FURISA ,  FILIPIAK STANLEY M ,  DAVID L OMEERA ,  T P ONG ,  WOO MICHAEL P ,  TERRY G SPARKES ,  CAROL M GERATOS

IPC: H01L21/768 ,  H01L21/8244 ,  H01L27/11

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device where the trouble due to contact at the forming of cross connection is dissolved. SOLUTION: A semiconductor device contains the memory array of a SRAM cell. The SRAM cell is formed by using a process flow which is closely connected by a logic-type device. The SRAM cell is formed by using not three typical semiconductor layers but a single semiconductor layer. The SRAM cell contains multiple features which can considerably reduce the size (can reduce it to the size below 0.25 micron, and possible down to 0.1 micron). The system of a local mutual connection part 522 is realized by a peculiar process integrated system and respective local mutual connection parts cross-connect the inverter of SRAM and form it into a single opening 70. The interconnection part 104 of word/line is shifted from the silicon part of the same word/line, and therefore the mutual connection part will not be an obstacle to bit line connection.