公开(公告)号：JPH11251457A

公开(公告)日：1999-09-17

申请号：JP36097298

申请日：1998-12-18

Applicant: MOTOROLA INC

Inventor： CRAIG S REEJI ,  MOSUMI BUHATT ,  YON-JU TOM RI ,  ANDREW G NAGY ,  LARRY E FURISA ,  FILIPIAK STANLEY M ,  DAVID L OMEERA ,  T P ONG ,  WOO MICHAEL P ,  TERRY G SPARKES ,  CAROL M GERATOS

IPC: H01L21/768 ,  H01L21/8244 ,  H01L27/11

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device where the trouble due to contact at the forming of cross connection is dissolved. SOLUTION: A semiconductor device contains the memory array of a SRAM cell. The SRAM cell is formed by using a process flow which is closely connected by a logic-type device. The SRAM cell is formed by using not three typical semiconductor layers but a single semiconductor layer. The SRAM cell contains multiple features which can considerably reduce the size (can reduce it to the size below 0.25 micron, and possible down to 0.1 micron). The system of a local mutual connection part 522 is realized by a peculiar process integrated system and respective local mutual connection parts cross-connect the inverter of SRAM and form it into a single opening 70. The interconnection part 104 of word/line is shifted from the silicon part of the same word/line, and therefore the mutual connection part will not be an obstacle to bit line connection.

公开(公告)号：JP2682268B2

公开(公告)日：1997-11-26

申请号：JP14275391

申请日：1991-05-20

Applicant: MOTOROLA INC

Inventor： PINTCHOVSKI FAIVEL ,  YEARGAIN JOHN R ,  FILIPIAK STANLEY M

IPC: H01L21/316 ,  H01L23/532 ,  H01L29/78

公开(公告)号：JPH11330246A

公开(公告)日：1999-11-30

申请号：JP9740099

申请日：1999-04-05

Applicant: MOTOROLA INC

Inventor： RABIURU ISURAM ,  ABGELINOS V GERATOS ,  KEVIN LUCAS ,  FILIPIAK STANLEY M ,  RAMUNAS BENKATORAMAN

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a mutual interconnection of copper and a method of manufacturing which are capable of reliability enhancement in a semiconductor device, by exposing a mutual copper interconnection member to hydrogen- containing plasma, forming copper oxide from outside, and inhibiting oxidization a clarified copper layer again before forming a copper barrier layer on the surface. SOLUTION: A mutual copper interconnection member 39 is formed in an opening for mutual interconnection after removing a second copper layer, a first copper layer and a conductive barrier layer. A copper barrier layer 40 consisting of silicon and nitrogen is formed on the mutual copper interconnection member 39. The mutual copper interconnection member 39 is exposed to hydrogen-containing silicon-free plasma. Copper oxide is removed from an exposed part of the mutual copper interconnection member 39. The processed substrate is cleaned in the same chamber as that of the copper barrier layer, so that the cleaned copper surface is not exposed again before the deposition and is not oxidized again. With these manufacturing steps, reliability of the semiconductor device is enhanced.

公开(公告)号：JPH04229623A

公开(公告)日：1992-08-19

申请号：JP14275391

申请日：1991-05-20

Applicant: MOTOROLA INC

Inventor： PINTCHOVSKI FAIVEL ,  YEARGAIN JOHN R ,  FILIPIAK STANLEY M

IPC: H01L21/316 ,  H01L23/532 ,  H01L29/78

Abstract: PURPOSE: To protect against chemical deterioration, such as oxidation and others by providing a sealing layer of Al2 O3 . CONSTITUTION: An alloy layer 22 extends continuously on the horizontal and vertical surfaces of a conductor 14 which hermetically contains non-reactive metals. After the conductor 14 has been sealed with the alloy layer 22, a sealing layer of Al2 O3 is formed by the reaction of a solid body with a gas, i.e., O2 on an Al component. The oxidation of the alloy layer 22 selectively forms the sealing layer 24 only in the area of a substrate 12, where the alloy layer 22 is present. Consequently, any part of conductive coupling sealed during the subsequent processing period of the substrate can be prevented from being oxidized.

公开(公告)号：DE69112293T2

公开(公告)日：1996-05-02

申请号：DE69112293

申请日：1991-05-20

Applicant: MOTOROLA INC

Inventor： PINTCHOVSKI FAIVEL ,  YEARGAIN JOHN R ,  FILIPIAK STANLEY M

IPC: H01L21/316 ,  H01L23/532 ,  H01L29/78 ,  H01L23/485 ,  H01L21/48

Abstract: A process for fabricating an improved semiconductor device (10) is disclosed wherein a protective layer of Al2O3 (24) is selectively formed to encapsulate a refractory-metal conductor. (14) To form the Al2O3 layer,(24) first an Al/refractory-metal alloy (22) is selectively formed on the surface of the refractory-metal conductor, (14) then the Al/refractory-metal alloy (22) is reacted with O2. The resulting Al2O3 encapsulation layer acts (24) as an O2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al2O3 layer (24) improves the mechanical compatibility of the refractory-metal conductor (14) with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor (14).

公开(公告)号：DE69112293D1

公开(公告)日：1995-09-28

申请号：DE69112293

申请日：1991-05-20

Applicant: MOTOROLA INC

Inventor： PINTCHOVSKI FAIVEL ,  YEARGAIN JOHN R ,  FILIPIAK STANLEY M

IPC: H01L21/316 ,  H01L23/532 ,  H01L29/78 ,  H01L23/485 ,  H01L21/48

Abstract: A process for fabricating an improved semiconductor device (10) is disclosed wherein a protective layer of Al2O3 (24) is selectively formed to encapsulate a refractory-metal conductor. (14) To form the Al2O3 layer,(24) first an Al/refractory-metal alloy (22) is selectively formed on the surface of the refractory-metal conductor, (14) then the Al/refractory-metal alloy (22) is reacted with O2. The resulting Al2O3 encapsulation layer acts (24) as an O2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al2O3 layer (24) improves the mechanical compatibility of the refractory-metal conductor (14) with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor (14).

公开(公告)号：DE69205938T2

公开(公告)日：1996-05-30

申请号：DE69205938

申请日：1992-08-20

Applicant: MOTOROLA INC

Inventor： FILIPIAK STANLEY M

IPC: C23C8/24 ,  H01L21/285 ,  H01L21/318 ,  H01L21/321 ,  H01L21/768 ,  C23C16/34

Abstract: A process for forming a titanium nitride barrier layer in semiconductor devices using preheated ammonia reduces susceptibility to junction spiking. In one form of the invention, a substrate having an overlying layer of titanium is heated to a predetermined temperature in a reaction chamber. An ammonia gas is preheated to temperature not less than 600 DEG C and is introduced into the reaction chamber. The preheated ammonia gas and the titanium layer react to form a quality titanium nitride (TiN) layer which is highly resistant to the junction spiking phenomenon. Nitride layers of other Group IVB or Group VB elements of the periodic table may also be formed using the present invention.

公开(公告)号：DE69205938D1

公开(公告)日：1995-12-14

申请号：DE69205938

申请日：1992-08-20

Applicant: MOTOROLA INC

Inventor： FILIPIAK STANLEY M

IPC: C23C8/24 ,  H01L21/285 ,  H01L21/318 ,  H01L21/321 ,  H01L21/768 ,  C23C16/34

Abstract: A process for forming a titanium nitride barrier layer in semiconductor devices using preheated ammonia reduces susceptibility to junction spiking. In one form of the invention, a substrate having an overlying layer of titanium is heated to a predetermined temperature in a reaction chamber. An ammonia gas is preheated to temperature not less than 600 DEG C and is introduced into the reaction chamber. The preheated ammonia gas and the titanium layer react to form a quality titanium nitride (TiN) layer which is highly resistant to the junction spiking phenomenon. Nitride layers of other Group IVB or Group VB elements of the periodic table may also be formed using the present invention.

公开(公告)号：AU2003279030A1

公开(公告)日：2004-07-29

申请号：AU2003279030

申请日：2003-09-23

Applicant: MOTOROLA INC

Inventor： GOLDBERG CINDY K ,  FILIPIAK STANLEY M ,  FLAKE JOHN C ,  LII YEONG-JYH T ,  SMITH BRADLEY P ,  SOLOMENTSEV YURI E ,  SPARKS TERRY G ,  STROZEWSKI KIRK J ,  YU KATHLEEN C

IPC: H01L21/288 ,  H01L21/768

Abstract: Dummy features (64, 65, 48a, 48b) are formed within an interlevel dielectric layer (36). Passivation layers (32 and 54) are formed by electroless deposition to protect the underlying conductive regions (44, 48a, 48b and 30) from being penetrated from the air gaps (74). In addition, the passivation layers (32 and 54) overhang the underlying conductive regions (44, 48a, 48b and 30), thereby defining dummy features (65a, 65b and 67) adjacent the conductive regions (48a, 44 and 48b). The passivation layers (32 and 54) can be formed without additional patterning steps and help minimize misaligned vias from puncturing air gaps.

公开(公告)号：SG74130A1

公开(公告)日：2000-07-18

申请号：SG1999001628

申请日：1999-04-01

Applicant: MOTOROLA INC

Inventor： ISLAM RABIUL ,  GELATOS AVGERINOS V ,  LUCAS KEVIN ,  FILIPIAK STANLEY M ,  VENKATRAMAN RAMNATH

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L27/00

Abstract: In one embodiment, a copper interconnect structure is formed by depositing a dielectric layer (28) on a semiconductor substrate (10). The dielectric layer (28) is then patterned to form interconnect openings (29). A layer of copper (34) is then formed within the interconnect openings (29). A portion of the copper layer (34) is then removed to form copper interconnects (39) within the interconnect openings (29). A copper barrier layer (40) is then formed overlying the copper interconnects (39). Adhesion between the copper barrier layer (40) and the copper interconnects (39) is improved by exposing the exposed surface of the copper interconnects (39) to a plasma generated using only ammonia as a source gas.