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    INKJET PRINTHEAD WITH ENCAPSULANT-RETAINING FEATURES
    1.
    发明申请
    INKJET PRINTHEAD WITH ENCAPSULANT-RETAINING FEATURES 审中-公开

    公开(公告)号：WO2019211070A1

    公开(公告)日：2019-11-07

    申请号：PCT/EP2019/059174

    申请日：2019-04-11

    Applicant: MEMJET TECHNOLOGY LIMITED

    Inventor： PEREZ, Elmer Dimaculangan ,  NORTH, Angus ,  LOWE, Graeme ,  TAN, See-Huat ,  BARTON, Christopher

    IPC: B41J2/14

    Abstract: A MEMS chip assembly including: a support structure having a chip mounting surface; a MEMS chip mounted on the chip mounting surface, each MEMS chip having an active surface including one or more MEMS devices and a plurality of bond pads disposed alongside a connection edge of the MEMS chip; electrical connectors connected to the bond pads; and an encapsulant material covering the electrical connectors. The MEMS chip has encapsulant-retaining trenches defined in the active surface extending alongside the connection edge, each encapsulant-retaining trench being disposed between the bond pads and the MEMS devices.

    PROCESS FOR HANDLING MEMS WAFERS
    2.
    发明申请
    PROCESS FOR HANDLING MEMS WAFERS 审中-公开

    公开(公告)号：WO2020244890A1

    公开(公告)日：2020-12-10

    申请号：PCT/EP2020/063071

    申请日：2020-05-11

    Applicant: MEMJET TECHNOLOGY LIMITED

    Inventor： ARNAL, Nicolas ,  QUIMPO, Troy, Pasiola ,  NORTH, Angus

    IPC: B41J2/16

    Abstract: A process for handling MEMS wafers includes the steps of: (i) attaching a first carrier substrate to a first side of a MEMS wafer, the first carrier substrate being attached via a first wafer bonding tape and a silicone-free peel tape, the peel tape contacting the first side of the MEMS wafer; (ii) performing wafer processing steps on an opposite second side of the MEMS wafer; (iii) releasing the first carrier substrate from the first side of the MEMS wafer via exposure to an energy source, the energy source selectively releasing the wafer bonding tape from the first side of the MEMS wafer; and (iv) peeling the peel tape away from the first side of the MEMS wafer.

    PROCESS FOR FORMING INKJET NOZZLE CHAMBERS
    3.
    发明申请
    PROCESS FOR FORMING INKJET NOZZLE CHAMBERS 审中-公开

    公开(公告)号：WO2019101605A1

    公开(公告)日：2019-05-31

    申请号：PCT/EP2018/081277

    申请日：2018-11-14

    Applicant: MEMJET TECHNOLOGY LIMITED

    Inventor： NORTH, Angus ,  WALKER, Matthew

    IPC: B41J2/16

    Abstract: A process for forming an inkjet chamber over a hole defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) laminating a layer of dry film photoresist onto the frontside surface; (ii) defining wall openings corresponding to chamber walls in the dry film photoresist; (iii) depositing chamber material into the wall openings and over the dry film photoresist so as to form chamber walls and a chamber roof; (iv) defining a nozzle opening in the chamber roof; and (v) removing the dry film photoresist to form the inkjet chamber over the hole.

    PROCESS FOR FILLING ETCHED HOLES
    4.
    发明申请
    PROCESS FOR FILLING ETCHED HOLES 审中-公开
    填充蚀刻孔的方法

    公开(公告)号：WO2016131657A1

    公开(公告)日：2016-08-25

    申请号：PCT/EP2016/052318

    申请日：2016-02-03

    Applicant: MEMJET TECHNOLOGY LIMITED

    Inventor： NORTH, Angus ,  O'REILLY, Ronan ,  MCAVOY, Gregory

    IPC: B41J2/16 ,  B81C1/00

    CPC classification number: B81C1/00611 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/052 ,  B81B2203/0353 ,  B81C2201/0104 ,  B81C2201/0121

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

    Abstract translation: 一种用于填充限定在晶片衬底的前表面中的一个或多个蚀刻孔的工艺。 该方法包括以下步骤：（i）将热塑性第一聚合物层沉积到前表面和每个孔中; （ii）回流第一聚合物; （iii）将晶片衬底暴露于受控氧化等离子体; （iv）任选地重复步骤（i）至（iii）; （v）沉积可光成像的第二聚合物层; （vi）使用曝光和显影从所述孔的外周边区域选择性地除去所述第二聚合物; 和（vii）平面化前侧表面以提供填充有彼此不同的第一和第二聚合物的塞子的孔。 每个插头具有与前侧表面共面的相应的上表面。

    PROCESS FOR FILLING ETCHED HOLES
    7.
    发明公开
    PROCESS FOR FILLING ETCHED HOLES 审中-公开
    填充蚀刻孔的过程

    公开(公告)号：EP3259134A1

    公开(公告)日：2017-12-27

    申请号：EP16702736.6

    申请日：2016-02-03

    Applicant: Memjet Technology Limited

    Inventor： NORTH, Angus ,  O'REILLY, Ronan ,  MCAVOY, Gregory

    IPC: B41J2/16 ,  B81C1/00

    CPC classification number: B81C1/00611 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/052 ,  B81B2203/0353 ,  B81C2201/0104 ,  B81C2201/0121

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

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