High speed CMOS driver
    1.
    发明公开
    High speed CMOS driver 失效
    CMOS-Treiberschaltung mit hoher Schaltgeschwindigkeit。

    公开(公告)号:EP0267361A1

    公开(公告)日:1988-05-18

    申请号:EP87108319.2

    申请日:1987-06-09

    CPC classification number: H03K19/01714

    Abstract: A bootstrapped CMOS driver circuit capable of driving large capacitance loads with small internal delays. Higher driving capability is achieved by using only n-channel transistors (M2, M4) at the output (O) and overdriving the transistors (M4) during the transitions. A total internal delay of less than one nanosecond for a driver may be provided with 100 ohms compatible output impedance.

    Abstract translation: 一种自举的CMOS驱动电路,能够驱动大的电容负载,内部延迟小。 通过在输出(O)下仅使用n沟道晶体管(M2,M4)并在转换期间过驱动晶体管(M4)来实现更高的驱动能力。 驱动器的总内部延迟小于1纳秒可以提供100欧姆兼容的输出阻抗。

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