公开(公告)号：EP0268116A1

公开(公告)日：1988-05-25

申请号：EP87115855.6

申请日：1987-10-28

Applicant: Microelectronics and Computer Technology Corporation

Inventor： Potter, Curtis Nathan

IPC: G03F7/16 ,  H01L21/312

CPC classification number: H01L21/02282 ,  G03F7/168 ,  H01L21/02118 ,  H01L21/312

Abstract: Applying a photoresist layer containing a solvent to the top of an electronic wafer by spin coating. Before the layer dries the wafer is heated in an oven while controlling the solvent loss from the coating by maintaining the pressure of the solvent vapor and providing a slow solvent loss for planarizing the top surface of the polymer. The device is removed from the first oven and the bake cycle is completed in a standard convection bake oven.

Abstract translation: 通过旋涂将含有溶剂的光致抗蚀剂层施加到电子晶片的顶部。 在层干燥之前，晶片在烘箱中加热，同时通过维持溶剂蒸汽的压力并提供缓慢的溶剂损失来平坦化聚合物的顶表面，从而控制溶剂从涂层中的损失。 将设备从第一烘箱中取出，烘烤循环在标准对流烤箱中完成。

公开(公告)号：EP0268971A2

公开(公告)日：1988-06-01

申请号：EP87116898.5

申请日：1987-11-16

Applicant: Microelectronics and Computer Technology Corporation

Inventor： Potter, Curtis Nathan

IPC: H01L21/48 ,  H01L23/14

CPC classification number: H05K3/4685 ,  H01L21/4857 ,  H01L23/5381 ,  H01L2924/0002 ,  H05K3/205 ,  H01L2924/00

Abstract: A method of fabricating an anodic aluminum support system having an air bridge for metallic conductors. The method includes providing two or more metal layers separated by a coating of aluminum creating a multiple layer electrical interconnect system. The method includes the step of anodizing the aluminum and applying a photoresist mask to spaced portions of the top of the system. Thereafter, an etching solution is applied to the top of the system for removing the anodized aluminum, except for the portions covered by the mask, thereby providing a multilayer conductor system supported by pillars of anodic aluminum surrounded by low dielectric air.

Abstract translation: 一种制造具有用于金属导体的空气桥的阳极铝支撑系统的方法。 该方法包括提供由铝涂层隔开的两个或多个金属层，形成多层电互连系统。 该方法包括阳极氧化铝并将光致抗蚀剂掩模施加到系统顶部的间隔部分的步骤。 此后，除了由掩模覆盖的部分之外，将蚀刻溶液施加到除去阳极氧化铝的系统顶部，由此提供由低介电空气包围的阳极铝柱支撑的多层导体系统。

公开(公告)号：EP0268971B1

公开(公告)日：1993-03-24

申请号：EP87116898.5

申请日：1987-11-16

Applicant: Microelectronics and Computer Technology Corporation

Inventor： Potter, Curtis Nathan

IPC: H01L21/48 ,  H01L23/14

CPC classification number: H05K3/4685 ,  H01L21/4857 ,  H01L23/5381 ,  H01L2924/0002 ,  H05K3/205 ,  H01L2924/00

公开(公告)号：EP0268116B1

公开(公告)日：1991-01-02

申请号：EP87115855.6

申请日：1987-10-28

Applicant: Microelectronics and Computer Technology Corporation

Inventor： Potter, Curtis Nathan

IPC: G03F7/16 ,  H01L21/312

CPC classification number: H01L21/02282 ,  G03F7/168 ,  H01L21/02118 ,  H01L21/312

Abstract: Applying a photoresist layer containing a solvent to the top of an electronic wafer by spin coating. Before the layer dries the wafer is heated in an oven while controlling the solvent loss from the coating by maintaining the pressure of the solvent vapor and providing a slow solvent loss for planarizing the top surface of the polymer. The device is removed from the first oven and the bake cycle is completed in a standard convection bake oven.

公开(公告)号：EP0268971A3

公开(公告)日：1988-08-17

申请号：EP87116898

申请日：1987-11-16

Applicant: Microelectronics and Computer Technology Corporation

Inventor： Potter, Curtis Nathan

IPC: H01L21/48 ,  H01L23/14

CPC classification number: H05K3/4685 ,  H01L21/4857 ,  H01L23/5381 ,  H01L2924/0002 ,  H05K3/205 ,  H01L2924/00

Abstract: A method of fabricating an anodic aluminum support system having an air bridge for metallic conductors. The method includes providing two or more metal layers separated by a coating of aluminum creating a multiple layer electrical interconnect system. The method includes the step of anodizing the aluminum and applying a photoresist mask to spaced portions of the top of the system. Thereafter, an etching solution is applied to the top of the system for removing the anodized aluminum, except for the portions covered by the mask, thereby providing a multilayer conductor system supported by pillars of anodic aluminum surrounded by low dielectric air.