公开(公告)号：US20240286890A1

公开(公告)日：2024-08-29

申请号：US18585802

申请日：2024-02-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Altti TORKKELI ,  Masakazu FUKUMITSU ,  Anssi BLOMQVIST ,  Matti LIUKKU ,  Ville-Pekka RYTKÖNEN ,  Tadayuki OKAWA ,  Petteri KILPINEN

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0051 ,  B81C1/00666 ,  B81C1/00984 ,  B81B2201/0228

Abstract: A MEMS device is provided that includes a handle layer having a cavity and a suspension structure, a first device layer including a static electrode, a second device layer including a seismic element moveably suspended above the first device layer and a cap layer. The seismic element acts as the moveable electrode or the seismic element is mechanically coupled to move with the moveable electrode. The handle layer, the first device layer, the second device layer and the cap layer, a first electrically insulating layer between the handle layer and the first device layer, and a second electrically insulating layer between the first device layer and the second device layer form an enclosure that accommodates the seismic element, the static electrode and the moveable electrode.

公开(公告)号：US20230261635A1

公开(公告)日：2023-08-17

申请号：US18303614

申请日：2023-04-20

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tadayuki OKAWA ,  Toshio NISHIMURA

IPC: H03H9/13 ,  H03H9/10 ,  H03H9/19 ,  H03B5/32

CPC classification number: H03H9/131 ,  H03B5/32 ,  H03H9/19 ,  H03H9/1021

Abstract: A piezoelectric vibration element that includes a piezoelectric piece having a first principal surface and a second principal surface; a via electrode penetrating the piezoelectric piece from the first principal surface to the second principal surface thereof; a conductive etch stop film covering the via electrode on the second principal surface; and a wiring electrode covering at least part of an outer edge of the conductive etch stop film on the second principal surface.

公开(公告)号：US20230246625A1

公开(公告)日：2023-08-03

申请号：US18133347

申请日：2023-04-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshio NISHIMURA ,  Yuuki OOI ,  Tadashi YODA ,  Tadayuki OKAWA

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/10 ,  H03H9/19

CPC classification number: H03H9/02094 ,  H03H3/02 ,  H03H9/02102 ,  H03H9/02133 ,  H03H9/02118 ,  H03H9/1021 ,  H03H9/19 ,  H03H2003/022

Abstract: A quartz crystal resonator unit that includes: a piezoelectric blank; a first excitation electrode on a first principal surface and within at least a part of a vibration portion of the piezoelectric blank; a second excitation electrode on a second principal surface and within at least a part of the vibration portion of the piezoelectric blank; a first extended electrode on the first principal surface and electrically connected to the first excitation electrode; and a second extended electrode on the second principal surface and electrically connected to the second excitation electrode; and an insulation layer including a hollow portion which defines a space with the second excitation electrode. A thickness of the first extended electrode is larger than a thickness of the second extended electrode. An end portion of the first extended electrode extends over the hollow portion in a plan view of the piezoelectric vibrator.

公开(公告)号：US20160079218A1

公开(公告)日：2016-03-17

申请号：US14936256

申请日：2015-11-09

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Kiminori WATANABE ,  Seiichi SATO ,  Toshiya WATANABE ,  Tadayuki OKAWA ,  Kiyoto ARAKI ,  Teiji YAMAMOTO

IPC: H01L25/16 ,  H01L23/58 ,  H01L23/48 ,  H01L33/62 ,  H01L29/866 ,  H01L23/60

CPC classification number: H01L25/167 ,  H01L23/481 ,  H01L23/585 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/0694 ,  H01L29/866 ,  H01L33/62

Abstract: An electrostatic protection device includes a base member formed of a high-resistance semiconductor material. External connecting lands are formed on a first principal surface of the base member along a first direction with a space therebetween. A diode section is formed in the first principal surface of the base member through a semiconductor forming process. The diode section is formed between formation regions of the external connecting lands along the first direction. A high concentration region is a region that has the same polarity as the base member and contains larger amounts of impurities than the base member. The high concentration region is formed in a ring shape enclosing the diode section in a plan view of the base member.

Abstract translation: 静电保护装置包括由高电阻半导体材料形成的基底构件。 外部连接台沿着第一方向在基座的第一主表面上形成有空间。 二极管部分通过半导体形成工艺形成在基底部件的第一主表面上。 二极管部分沿着第一方向形成在外部连接焊盘的形成区域之间。 高浓度区域是与基底构件具有相同极性的区域，并且含有比基底构件更大量的杂质。 高浓度区域形成为包围二极管部分的环状，并且在该基底部件的平面图中。