公开(公告)号：CA2564220A1

公开(公告)日：2005-12-15

申请号：CA2564220

申请日：2005-04-29

Applicant: NANOSYS INC

Inventor： NIU CHUNMING ,  MOSTARSHED SHAHRIAR ,  GOLDMAN JAY ,  DUAN XIANGFENG ,  DUBROW BOB ,  PAN YAOLING ,  ROMANO LINDA T ,  STUMBO DAVE

IPC: H01L21/20 ,  C01B31/02 ,  C30B11/12 ,  C30B29/60 ,  H01L21/425

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

公开(公告)号：AU2005251089A1

公开(公告)日：2005-12-15

申请号：AU2005251089

申请日：2005-04-29

Applicant: NANOSYS INC

Inventor： GOLDMAN JAY ,  DUAN XIANGFENG ,  STUMBO DAVE ,  PAN YAOLING ,  NIU CHUNMING ,  MOSTARSHED SHAHRIAR ,  DUBROW BOB ,  ROMANO LINDA T

IPC: H01L21/20 ,  C01B31/02 ,  C30B11/12 ,  C30B29/60 ,  H01L21/425

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

公开(公告)号：WO2005119753A3

公开(公告)日：2006-07-27

申请号：PCT/US2005014923

申请日：2005-04-29

Applicant: NANOSYS INC ,  PAN YAOLING ,  DUAN XIANGFENG ,  DUBROW BOB ,  GOLDMAN JAY ,  MOSTARSHED SHAHRIAR ,  NIU CHUNMING ,  ROMANO LINDA T ,  STUMBO DAVE

Inventor： PAN YAOLING ,  DUAN XIANGFENG ,  DUBROW BOB ,  GOLDMAN JAY ,  MOSTARSHED SHAHRIAR ,  NIU CHUNMING ,  ROMANO LINDA T ,  STUMBO DAVE

IPC: H01L21/20 ,  C01B31/02 ,  C30B11/12 ,  C30B29/60 ,  H01L21/425

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Abstract translation: 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一衬底的方法。

公开(公告)号：WO2005067524A3

公开(公告)日：2006-12-14

申请号：PCT/US2005001141

申请日：2005-01-13

Applicant: NANOSYS INC ,  PARCE J WALLACE ,  CHEN JIAN ,  DUBROW BOB ,  FREEMAN BILL ,  SCHER ERIK C ,  WHITEFORD JEFFERY A

Inventor： PARCE J WALLACE ,  CHEN JIAN ,  DUBROW BOB ,  FREEMAN BILL ,  SCHER ERIK C ,  WHITEFORD JEFFERY A

IPC: B32B1/04 ,  B32B3/02 ,  B32B5/06 ,  C09D5/00 ,  C09D7/12 ,  C09D11/02 ,  C09K11/02 ,  C09K11/08 ,  C09K11/56 ,  C09K11/88 ,  C09K19/00 ,  C30B23/00 ,  G02B3/00 ,  G02B6/00 ,  H01J1/62 ,  H01L29/22 ,  H01L33/50

CPC classification number: C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  C08K3/30 ,  C09D5/00 ,  C09D7/61 ,  C09D7/67 ,  C09D11/037 ,  C09K11/565 ,  C09K11/883 ,  G02B1/11 ,  G02B3/00 ,  G02B3/0006 ,  G02B5/08 ,  H01L33/502 ,  H01L33/504 ,  H01L33/56 ,  H05B33/145 ,  Y10S977/715 ,  Y10S977/753 ,  Y10S977/834 ,  Y10T428/23 ,  Y10T428/239

Abstract: The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

Abstract translation: 本发明提供掺杂有半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 本发明还提供了制备包含半导体纳米晶体的基质的方法。