DEPOSITION DEVICE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20250006488A1

    公开(公告)日:2025-01-02

    申请号:US18341782

    申请日:2023-06-27

    Abstract: A deposition device includes a first chamber, a substrate support, a second chamber, a showerhead, a first reactant inlet, a second reactant, and a precursor inlet. The first chamber includes a diffusion zone and a reaction zone, and the diffusion zone is above the reaction zone. The substrate support is disposed in the reaction zone. The second chamber is disposed over the first chamber. The showerhead is disposed between the first chamber and the second chamber. The first reactant inlet communicates with the second chamber. The second reactant inlet communicates with the reaction zone of the first chamber. The precursor inlet communicates with the showerhead.

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