公开(公告)号：US20250166898A1

公开(公告)日：2025-05-22

申请号：US18515291

申请日：2023-11-21

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chih-Chun HSIAO ,  Ji-Feng LIU

IPC: H01G4/008 ,  H01G4/12 ,  H01G4/38

Abstract: A method of manufacturing a capacitor includes forming a bottom electrode layer; forming an insulator on the bottom electrode layer; crystallizing the insulator; and forming a top electrode layer on the crystallized insulator. As such, the leakage problem due to thinner top electrode layer and smaller critical dimension of the capacitor can be reduced. In addition, possibility for the capacitors to collapse is reduced, and the electrical performance of the capacitor won't be affected by the collapse problem.