公开(公告)号：US12283518B2

公开(公告)日：2025-04-22

申请号：US17824481

申请日：2022-05-25

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chih-Hsuan Yeh

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/522

Abstract: The present disclosure provides a method for fabricating a semiconductor device including providing a photomask including an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate, wherein the translucent layer includes a mask opening of contact portion which exposes a portion of the mask substrate; providing a stack structure including an etch stop layer on a bottom conductive layer and a first inter-dielectric layer on the etch stop layer, and forming a pre-process mask layer on the stack structure; patterning the pre-process mask layer using the photomask to form a patterned mask layer including a mask region corresponding to the opaque layer, a region of body portion corresponding to the translucent layer, and a hole of contact portion corresponding to the mask opening of contact portion.