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公开(公告)号:JPH1022534A
公开(公告)日:1998-01-23
申请号:JP18675196
申请日:1996-06-27
Applicant: NAT AEROSPACE LAB
Inventor: TANJI YASUNORI , NODA YASUTOSHI , KUMAGAI TATSUO , KIZARA KATSUHITO , KOU ENSEI , SHINNO MASAYUKI , TADA YASUO
Abstract: PROBLEM TO BE SOLVED: To enable a base material to be doped with impurities surely at a required doping amount, that is, with good controllability uniformly by making impurities react on a constituent element of a base material once to be a compound and adding and dispersing it to a base material. SOLUTION: High frequency current is supplied to a high frequency coil 2 and the coil is heated. In the process, at first, it is heated at a temperature which is lower than a fusing point of a base material 5 and higher than a fusing point of impurities 4. A compound Na2 Te is produced by making Na of the impurity element material 4 and Te of a base material react in this way. Oxidizing property of the compound is greatly weak when compared with Na only and becomes a stable substance. Then, heating of a high temperature is carried out. The high temperature heating is carried out at a temperature which is higher than a fusing point of Pb and Te of a base material for dissolving all the raw material inside a crucible 1 and contents inside the crucible 1 are fully agitated and mixed while the high temperature heating is maintained. Thereby, impurities of Na can be dispersed uniformly and entirely into a base material of PbTe.
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公开(公告)号:JPH11177156A
公开(公告)日:1999-07-02
申请号:JP36362597
申请日:1997-12-16
Applicant: NAT AEROSPACE LAB
Inventor: NODA YASUTOSHI , KOU YASUO , MORIYA SHINICHI , SHINNO MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To enhance thermoelectric conversion characteristics by performing pressure deformation or extrusion plastic working of a fused or sintered thermoelectric semiconductor material while heating electrically. SOLUTION: A metal powder material 6 for one electrode of a thermoelectric conversion element, a sintered or fused mass of thermoelectric semiconductor material 5, and a metal powder material 6 for the other electrode are arranged sequentially on a punch 4 in the cavity 1 of a die 2. Punches 3, 4 are then pressed each other or one punch is pressed against the other thus compressing the powdery electrode material 6 and the semiconductor material 5. Under that state, a large current is fed between the conductive punches 3, 4 and hot working is performed. Alternatively, a punch 23 is pressed toward the outlet 24 of a die 22 to extrude the thermoelectric semiconductor material 5 while softening. In this regard, a large current is fed between the conductive punches 23, 22 to generate heat and the material is extruded by applying a pressure while controlling the working temperature.
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公开(公告)号:JPH1065222A
公开(公告)日:1998-03-06
申请号:JP23258396
申请日:1996-08-14
Applicant: NAT AEROSPACE LAB
Inventor: NODA YASUTOSHI , KOU ENSEI , TANJI YASUNORI , KUMAGAI TATSUO , SHINNO MASAYUKI , TADA YASUO
Abstract: PROBLEM TO BE SOLVED: To enable a thermoelectric conversion device to be surely manufactured which is long in service life and high in reliability. SOLUTION: A sintered or a molten thermoelectric semiconductor material 4 is prepared. The material 4 and electrode materials 5 are pressed against each other and plasma-bonded together by applying a large current, whereby a thermoelectric conversion main body 11 formed of the material 4 and electrodes 12 are integrated into one piece for the formation of a thermoelectric conversion device 10.
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公开(公告)号:JPH10144970A
公开(公告)日:1998-05-29
申请号:JP31424996
申请日:1996-11-11
Applicant: NAT AEROSPACE LAB
Inventor: NODA YASUTOSHI , KOU ENSEI , MORIYA SHINICHI , SUDO TAKAYUKI , MORO AKIO
Abstract: PROBLEM TO BE SOLVED: To avoid the breakdown of each part and improve thermoelectric conversion property and reliability by constituting the heat conductive part of a thermoelectric conversion module out of a metallic plate or a metallic layer coated with a ceramic layer. SOLUTION: Heat conducting parts 26H and 26L are constituted of a metallic plate 28 or a metallic layer coated with a ceramic layer 27, so as to materialize electric insulation or good heat conduction between metallic segments 15A and 15B of a thermoelectric covering element 10 and heat conductive parts 26H and 26L. For example, after boring a through screw hole or the like in the required place of the metallic plate 28, the whole surface is flame-coated with Al2 O3 which is high in heat conductivity into a thickness in the range 10μm-50μm to coat it with a ceramic layer 27. Then, the heat conducting part 26H on high temperature side and the heat conducting part 26L on the cooling side made that way are fixed by fixing screws 18 such as insulating ceramic, teflon, or the like, so as to set up a thermoelectric conversion module.
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公开(公告)号:JPH1074986A
公开(公告)日:1998-03-17
申请号:JP18314697
申请日:1997-06-24
Applicant: NAT AEROSPACE LAB
Inventor: NODA YASUTOSHI , KOU ENSEI , KIZARA KATSUHITO , KUMAGAI TATSUO , TANJI YASUNORI , CHIN RITSUTOU , SHINNO MASAYUKI , TADA YASUO
Abstract: PROBLEM TO BE SOLVED: To obtain highly reliable thermoelectric elements for low, intermediate and high temperatures having long service life by performing discharge plasma sintering, while pressing a thermoelectric semiconductor material against an electrode material thereby integrating a thermoelectric conversion element body and an electrode. SOLUTION: A metal plate or a metal powder electrode material 6 composing one electrode of a thermoelectric conversion element, a powdery thermoelectric semiconductor material 5 composing a thermoelectric conversion element body, and the metal plate or metal powder electrode material 6, composing the other electrode of the thermoelectric conversion element are arranged sequentially on a lower punch 4 in the cavity 1 of a die 2. Both upper and lower punches 3, 4 are then pressed to compress the electrode material 6 and the thermoelectric semiconductor material 5. Under that state, a high current is conducted between the upper and lower punches 3, 4 in order to perform discharge plasma sintering, thus integrating the electrode material 6 and the thermoelectric semiconductor material 5. According to the method, highly reliable thermoelectric elements for low, intermediate and high temperatures, having long service life can be obtained.
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