公开(公告)号：EP2811526A4

公开(公告)日：2015-10-21

申请号：EP13742926

申请日：2013-01-30

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： IROKAWA YOSHIHIRO ,  SHIMAMURA KIYOSHI ,  GARCIA VILLORA ENCARNACION ANTONIA

IPC: H01L21/329 ,  H01L21/20 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L29/66212 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/872

Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 10 6 cm -2 or less and a thickness of 300 µm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and -40 V is at least 10 3 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of -40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.