公开(公告)号：EP2540877A4

公开(公告)日：2015-11-25

申请号：EP11744760

申请日：2011-02-18

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： LIAO MEIYONG ,  KOIDE YASUO ,  HISHIDA SHUNICHI

IPC: C30B29/04 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  B82B1/00 ,  C23C16/27 ,  C30B31/22 ,  G01Q70/16

CPC classification number: C30B29/04 ,  B81C1/0015 ,  B81C2201/019 ,  C30B31/22

Abstract: The utilization of single crystal diamond in a nano- or micro-machine (N/MEMS) device is difficult, and there has been no report on such utilization. The reason for this resides in that it is difficult to grow single crystal diamond on an oxide which is a sacrifice layer. In a conventional technique, a cantilever or the like is produced by forming polycrystalline diamond or nanodiamond on an oxide as a sacrifice layer, but the mechanical performance, vibration characteristics, stability, and reproducibility of the produced cantilever or the like are unsatisfactory. In the present invention, utilizing the fact that the high concentration ion-implanted region in a diamond substrate 101 is modified into graphite, the layer 104 modified into graphite as a sacrifice layer is removed by electrochemical etching to obtain the diamond layer remaining on the resultant substrate as a movable structure. The produced cantilever 106 exhibited high frequency resonance. The use of single crystal diamond makes it possible to improve the N/MEMS device in mechanical performance and stability as well as electric properties.

公开(公告)号：EP2246896A4

公开(公告)日：2014-12-31

申请号：EP09708514

申请日：2009-02-09

Applicant: NAT INST FOR MATERIALS SCIENCE ,  CENTRE NAT RECH SCIENT

Inventor： KOIDE YASUO ,  LIAO MEIYONG ,  ALVAREZ JOSE ,  KLEIDER JEAN-PAUL

IPC: H01L31/08 ,  C23C16/27 ,  C30B29/04 ,  C30B31/06 ,  G01J1/42 ,  H01L31/109

CPC classification number: G01J1/429 ,  C30B29/04 ,  C30B31/06 ,  H01L31/08 ,  H01L31/109

公开(公告)号：EP2169709A4

公开(公告)日：2011-06-22

申请号：EP08790855

申请日：2008-07-03

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： TERAJI TOKUYUKI ,  KOIZUMI SATOSHI ,  KOIDE YASUO

IPC: H01L21/28 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L29/1602 ,  H01L21/0435 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6603 ,  H01L29/872

Abstract: The diamond semiconductor device is a diamond semiconductor device where a pair of electrodes are fixed on a diamond substrate, and wherein at least one interface to the electrode on the surface of the diamond substrate has a hydrogen termination and at least the surface of the substrate between the pair of two electrodes is controlled to have a larger electric resistivity value than inside the substrate. Accordingly, a diamond semiconductor device can be realized, capable of attaining the device work stability, especially the device work stability in severe environments such as high temperature with exhibiting the function of the hydrogen termination thereof to the utmost extent.