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公开(公告)号：JP2002231996A
公开(公告)日：2002-08-16
申请号：JP2001368095
申请日：2001-12-03
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： KOIZUMI SATOSHI , WATANABE KENJI , KANDA HISAO
IPC: H01L21/205 , H01L33/34 , H01L33/40 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a diamond pn junction diode and a pin junction diode capable of emitting ultraviolet light. SOLUTION: An ohmic electrode is formed on a boron-doped p-type semiconductor diamond thin film (p-type layer) or an electroconductive substrate brought into contact with the thin film. A phosphorus-doped n-type semiconductor diamond thin film (n-type film) is formed directly or via an undoped diamond thin film on the surface of the p-type layer without being brought into contact with the ohmic electrode. An ohmic electrode is formed on the surface of the n-type layer without contacting the p-layer or the ohmic electrode formed on the p-layer.
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2.发明公开SINGLE CRYSTAL OF HIGHLY PURIFIED HEXAGONAL BORON NITRIDE CAPABLE OF FAR ULTRAVIOLET HIGH-LUMINANCE LIGHT EMISSION, PROCESS FOR PRODUCING THE SAME, FAR ULTRAVIOLET HIGH-LUMINANCE LIGHT EMITTING DEVICE INCLUDING THE SINGLE CRYSTAL, AND UTILIZING THE DEVICE, SOLID LASER AND SOLID LIGHT EMITTING UNIT 有权从高度纯化的六方氮化硼REQUIRED TO光发射深紫外高亮度ENABLED单晶IS PROCESS FOR PRODUCING，LIGHT IN深紫外线高亮度发光器件和所述装置的用途，固体激光器和固体发光单元
公开(公告)号：EP1686202A4
公开(公告)日：2009-06-10
申请号：EP04799790
申请日：2004-11-17
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： WATANABE KENJI , TANIGUCHI TAKASHI , KOIZUMI SATOSHI , KANDA HISAO , KATAGIRI MASAYUKI , YAMADA TAKATOSHI , MILOS NESLADEK
CPC classification number: C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
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公开(公告)号：EP2169709A4
公开(公告)日：2011-06-22
申请号：EP08790855
申请日：2008-07-03
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： TERAJI TOKUYUKI , KOIZUMI SATOSHI , KOIDE YASUO
IPC: H01L21/28 , H01L29/47 , H01L29/872
CPC classification number: H01L29/1602 , H01L21/0435 , H01L29/45 , H01L29/47 , H01L29/6603 , H01L29/872
Abstract: The diamond semiconductor device is a diamond semiconductor device where a pair of electrodes are fixed on a diamond substrate, and wherein at least one interface to the electrode on the surface of the diamond substrate has a hydrogen termination and at least the surface of the substrate between the pair of two electrodes is controlled to have a larger electric resistivity value than inside the substrate. Accordingly, a diamond semiconductor device can be realized, capable of attaining the device work stability, especially the device work stability in severe environments such as high temperature with exhibiting the function of the hydrogen termination thereof to the utmost extent.
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公开(公告)号：DE602004031971D1
公开(公告)日：2011-05-05
申请号：DE602004031971
申请日：2004-11-17
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： WATANABE KENJI , TANIGUCHI TAKASHI , KOIZUMI SATOSHI , KANDA HISAO , KATAGIRI MASAYUKI , YAMADA TAKATOSHI , MILOS NESLADEK
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