公开(公告)号：EP3041324A4

公开(公告)日：2017-03-15

申请号：EP14839536

申请日：2014-08-29

Applicant: NAT INST OF ADVANCED IND SCIENCE

Inventor： KIM JAEHO ,  SAKAKITA HAJIME

IPC: H05H1/30 ,  C23C16/455 ,  C23C16/511 ,  C23C16/513 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/34 ,  H05H1/46

CPC classification number: H01J37/32192 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/511 ,  C23C16/513 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4622

Abstract: To provide microwave excitation plasma processing device capable of generating wide-width plasma jet having high uniformity, high density, and low temperature even under intermediate pressure and high pressure. The microwave plasma processing device includes: dielectric substrate; tapered portion provided in one end portion of the dielectric substrate, the tapered portion being shaped so that thickness of the dielectric substrate becomes gradually smaller; microstrip line; ground conductor; microwave input portion; gas input port configured to input gas into the dielectric substrate; plasma generating portion; gas flow widening portion provided inside the dielectric substrate and configured to supply wide-width gas flow having uniform flow velocity to the plasma generating portion, the gas flow widening portion being formed to make a gas flow width wider as the gas flow advances; gas flow channel configured to supply the gas to the gas flow widening portion; and nozzle for blowing plasma.

Abstract translation: 提供即使在中压和高压下也能够产生具有高均匀性，高密度和低温的宽幅等离子体射流的微波激发等离子体处理装置。 微波等离子体处理装置包括：电介质基板; 所述锥形部设置在所述电介质基板的一端部，所述锥形部的形状使得所述电介质基板的厚度逐渐变小; 微带线 接地导体; 微波输入部分; 气体输入端口，被配置为将气体输入到电介质基板中; 等离子体产生部分; 设置在电介质基板的内部并被配置为向等离子体产生部分提供具有均匀流速的宽幅气流的气体流动加宽部分，形成气流扩大部分，使得气体流动宽度随着气流的前进而变宽; 气流通道，其构造成将气体供应到气流扩大部分; 和用于吹制等离子体的喷嘴。