公开(公告)号：EP0020708A4

公开(公告)日：1983-03-07

申请号：EP80900104

申请日：1980-06-03

Applicant: NCR CORP

Inventor： TRUDEL MURRAY LAWRENCE ,  LOCKWOOD GEORGE CORBIN ,  EVANS GILBERT GLENN

IPC: H01L29/78 ,  G11C11/34 ,  G11C16/04 ,  H01L21/31 ,  H01L27/10 ,  H01L29/10 ,  H01L29/792

CPC classification number: G11C16/0466 ,  H01L29/1045 ,  H01L29/792

Abstract: A low voltage write non-volatile MNOSFET memory device preferably of n-channel type has a first relatively highly doped p+ channel region (27) and a second underlying less highly doped p- region (28). The device is written to a "1" state by applying a low voltage (+12V) to the gate (21) and simultaneously applying a suitable voltage to the source (12) and/or the drain (13) to induce avalanche breakdown in the channel.