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公开(公告)号：JPH05890A
公开(公告)日：1993-01-08
申请号：JP17592891
申请日：1991-06-21
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO
Abstract: PURPOSE:To synthesize a high-quality diamond film of a sufficient thickness in a vapor phase at a high rate of film formation. CONSTITUTION:When a thin diamond film is synthesized in a vapor phase by conventional CVD with hot filaments, hot capillaries 23 heated to >=2,000 deg.C are used in place of the filaments and hydrogen is introduced through the capillaries 23. Since hydrogen is passed through the capillaries, atomic hydrogen taking an important part in feeding active seeds such as hydrocarbon radicals to a substrate 25 at high density can efficiently be generated.
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公开(公告)号：JPH05296864A
公开(公告)日：1993-11-12
申请号：JP12103892
申请日：1992-04-16
Applicant: NEC CORP
Inventor： BABA KAZUHIRO , AIKAWA YUMI
Abstract: PURPOSE:To obtain a compact pressure sensor which has superior pressure resistances and high accuracy by removing a part of a silicon substrate from the rear surface with using a diamond film as a mask after forming the diamond thin film and a strain gauge on the silicon substrate. CONSTITUTION:A supporting body of the sensor is formed of a monocrystal silicon substrate 1. A diaphragm of a diamond thin film 2 having 10-50MPa tensile stress is formed on one surface of the substrate and a strain gauge 3 of a metallic thin film is set at the center of the diaphragm. A diamond thin film 4 is provided at the rear surface of the substrate 1 as an etching mask. The diamond thin films 2, 4 are formed by a thermal filament method. After the thin film for the diaphragm is formed 5mum thick and the thin film 4 for the mask is formed 1mum thick, a photoresist is applied onto the thin film 4, and then a part of the thin film 4 is removed by reactive ion etching. Subsequently, the metallic thin film 3 is formed at the central part of the thin film 2 by sputtering, and then the rear surface of the substrate 1 is etched by an aqueous solution of potassium hydroxide.
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公开(公告)号：JPH04338628A
公开(公告)日：1992-11-25
申请号：JP13950591
申请日：1991-05-16
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO
IPC: G03F1/22 , H01L21/027
Abstract: PURPOSE:To provide a mask for an X-ray lithography having the membrane which has no slackness, a small inner stress, and an excellent mechanical strength, as well as the side ends of the silicon frame which are precisely machined. CONSTITUTION:In a mask for an X-ray lighography using diamond films, a stress relaxation film 12 is formed between a silicon wafer 11 which is a substrate and a diamond film 13 which transmits X rays. Also, when a membrane is formed, the mask which is patterned by dry etching a diamond film 10 is used.
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公开(公告)号：JPH03273611A
公开(公告)日：1991-12-04
申请号：JP7220790
申请日：1990-03-23
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO
IPC: G03F1/68 , G03F1/80 , H01L21/027
Abstract: PURPOSE:To cope with the miniaturization of submicron ULSIs and the like and to enhance mechanical strength in high thermal conductivity and X-ray transmittance by constituting an X-ray transmitting thin film supporting an X-ray absorber having a specified pattern of a diamond film. CONSTITUTION:A metal layer 11 of tungsten, molybdenum or the like is deposited on the rear surface of a silicon wafer 12 by sputtering. A diamond film 13 is formed on the wafer 12. The diamond film 13 is heated in non- oxidizing atmosphere. An X-ray absorber layer 14 of tungsten, tantalum or the like is formed on the diamond film 13. The absorber layer 14 is patterned in the intended shape. Resist 15 is applied on the surface on which the pattern is formed, and the pattern is protected. The part where a membrane is to be formed is removed from the silicon wafer 12 from the rear surface. Finally, the resist 15 is removed, and the mask is obtained.
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公开(公告)号：JPH03168701A
公开(公告)日：1991-07-22
申请号：JP30970289
申请日：1989-11-29
Applicant: NEC CORP
Inventor： BABA KAZUHIRO , AIKAWA YUMI , SHOHATA NOBUAKI
Abstract: PURPOSE:To hold the transmissivity low in the visible light range and high in the infrared-light range by forming a diamond polycrystalline thin film at a window part in a specific shape. CONSTITUTION:The diamond polycrystalline thin film 12 is a formed on a substrate 11 by a heat filament vapor-phase composing method, etc., and a resist pattern is formed by using photoresist 13. Then the substrate 11 is etched in a desired shape by using a mask 14 to form the window part 11a in the specific shape and only the diamond polycrystalline thin film 12 is left corresponding to the window part 11a. This diamond polycrystalline thin film 12 can utilize both the light scattering and absorption by the ruggedness of the film surface and the scattering and absorption of light in a crystal grain boundary where a graphite phase in the film is present. Consequently, high transmissivity is obtained in the infrared range of >=50 micron wavelength and made low in the visible-light range.
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Patent Agency Ranking
公开(公告)号：JPH0585892A
公开(公告)日：1993-04-06
申请号：JP33786691
申请日：1991-11-28
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO
IPC: C30B29/04
Abstract: PURPOSE:To provide a diamond thin film having good film quality of a small grain diameter, high transmissivity and an internal stress of low tensile stress and a method for producing the diamond thin film. CONSTITUTION:Before forming a diamond film, a substrate is previously polished with diamond powder having =8mA/cm current density. The objective diamond thin film having measured by the Raman spectral analysis is obtained according to this method.
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公开(公告)号：JPH04245463A
公开(公告)日：1992-09-02
申请号：JP2935691
申请日：1991-01-30
Applicant: NEC CORP
Inventor： BABA KAZUHIRO , AIKAWA YUMI
IPC: H01L23/373
Abstract: PURPOSE:To quickly radiate heat produced by electronic devices, such as a high-output device, integrated circuit, etc., to the outside by using a heat sink constituted of a diamond film and substrate for supporting the diamond film. CONSTITUTION:In this diamond heat sink constituted of a diamond film 22 and substrate 21 for supporting the film 22, the substrate 21 is formed of a silicon carbide having a high coefficient of thermal conductivity and, at the same time, the thickness of the diamond film 22 is made thicker than that of the substrate 21.
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公开(公告)号：JPH03170033A
公开(公告)日：1991-07-23
申请号：JP30970189
申请日：1989-11-29
Applicant: NEC CORP
Inventor： BABA KAZUHIRO , AIKAWA YUMI , SHOHATA NOBUAKI
Abstract: PURPOSE:To improve the transmittance of X-rays and to lower the transmittance of UV rays and visible light by laminating the thin film of metal beryllium on the thin film of the diamond polycrystal in a window part. CONSTITUTION:Resist patterns are formed by a pattern forming stage using a photoresistor 13 in order to partially remove a substrate 12 except the diamond polycrystalline film 11 which is made to remain. The substrate 12 is removed by etching to a desired shape and size to form a window part 12a by using a mask. The thin film 10 of the metal beryllium is formed by vapor deposition or sputtering on the film 11. The high transmittance is thereby exhibited in an X-ray region and the low transmittance is obtd. in a visible light region.
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公开(公告)号：JPH06350120A
公开(公告)日：1994-12-22
申请号：JP13806793
申请日：1993-06-10
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO , YONEDA HITONORI
Abstract: PURPOSE:To provide a high-speed and high-breakdown strength light conductive element by providing two electrodes through a gap on a diamond film, and covering the inside of the gap and the topside of the gap with diamond. CONSTITUTION:Two strip-shaped electrodes 23 are formed so that the interval of the gap between them may be 10mum, by composing a diamond film 22 by heat filament method, by the use of an Si wafer polished with diamond power, as a substrate 21, and forming a platinum layer on the obtained diamond film 22. And, this can get such a structure that the gap is completely covered with a diamond film 1mm wide by growing the second diamond film in and on the gap. Accordingly, by this structure, the breakage of the surface insulation in the gap can be prevented, and the recoupling of the surfaces avoided, and high- speed and high-breakdown strength switching becomes possible, and a light conductive element higher in speed and higher in breakdown strength than before can be gotten.
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公开(公告)号：JPH04130620A
公开(公告)日：1992-05-01
申请号：JP24996590
申请日：1990-09-21
Applicant: NEC CORP
Inventor： AIKAWA YUMI , BABA KAZUHIRO
IPC: G03F1/22 , H01L21/027
Abstract: PURPOSE:To obtain a slack-free membrane which is usable for a practical X-ray lithography by using for a substrate a silicon wafer which has a diamond film formed on its rear surface and by forming a second diamond film as an X-ray penetrable thin film on the substrate. CONSTITUTION:A first diamond film 11 is formed on the rear surface of a silicon wafer 12. Then, a second diamond film 13 is formed on the surface of the wafer 12. After that, an X-ray absorber layer 14 is formed on the film 13. The layer 14 is patterned into the desired shape and the resist 15 is applied to the pattern-formed face to protect the pattern. Nextly, the film 11 is dry- etched to form a mask pattern for a membrane of the desired shape. Then, the wafer 12 is removed and finally the resist 15 is removed to get a mask. By the method mentioned above, a slack-free membrane can be obtained.
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