公开(公告)号：JP2006019316A

公开(公告)日：2006-01-19

申请号：JP2004192447

申请日：2004-06-30

Applicant: Nec Corp ,  日本電気株式会社

Inventor： MURAI HIDEYA ,  KIKUCHI KATSU ,  BABA KAZUHIRO ,  ORITO NAONORI

IPC: H05K3/18 ,  B81C1/00 ,  G02B3/00 ,  G03F7/40 ,  G03F7/42 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a pattern formation method that can realize highly accurate patterning even when the film is made of photosensitive resin or the like and is thick.
SOLUTION: A first pattern 1 is formed on a substrate 3, and a layer 2 made of a material to be patterned is formed in the opening 4 of the first pattern 1, and then the first pattern 1 is removed to form a second pattern made of a material to be patterned. In this method, the first pattern 1 is preferably constituted such that it may be made of metal or photosensitive resin, and the material to be patterned may be organic or inorganic.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供即使当膜由感光树脂等制成并且较厚时也能实现高精度图案化的图案形成方法。 解决方案：第一图案1形成在基板3上，并且由第一图案1的开口4中形成由待图案化材料制成的层2，然后移除第一图案1以形成 第二图案由待图案化的材料制成。 在该方法中，第一图案1优选地构成为可以由金属或感光性树脂制成，并且待图案化的材料可以是有机的或无机的。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005268810A

公开(公告)日：2005-09-29

申请号：JP2005106039

申请日：2005-04-01

Applicant: Nec Corp ,  日本電気株式会社

Inventor： ORITO NAONORI ,  HONDA KOICHI ,  HO KEIICHIRO ,  MURAI HIDEYA ,  KIKUCHI KATSU ,  BABA KAZUHIRO

IPC: H05K3/28 ,  H01L23/12 ,  H01L23/14 ,  H05K1/03 ,  H05K3/46

CPC classification number: H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a wiring board, which allows various devices, such as semiconductor devices, to be mounted with high density, the promotion of high-speed wiring and high-density fine wiring to be easy, and reliability to be excellent, a semiconductor package using the same, and a manufacturing method of the same. SOLUTION: A base insulating layer 7 is provided in the wiring substrate 13. The thickness of the base insulating layer 7 is in the range from 3 to 100 μm. Breaking strength when temperature is 23 °C is 80 MPa or more. Elastic modulus when temperature is 150 °C is 2.3 GPa or more. Moreover, a ratio (a/b) is made to be ≤2.5, where a in MPa is the breaking strength when temperature is -65 °C, and b in MPa is the breaking strength when temperature is 150 °C, and the breaking strength a and b, and the elastics modulus c and d are set so as to fill an inequality represented by the absolute value of (c/d-a/b)≤0.8, where c in GPa is the elastic modulus when temperature is -65 °C, and d in GPa is the elastic modulus when temperature is 150 °C. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供允许诸如半导体器件的各种装置以高密度安装的布线板，可以容易地促进高速布线和高密度精细布线，以及可靠性 优选使用其的半导体封装及其制造方法。 解决方案：基底绝缘层7设置在布线基板13中。基底绝缘层7的厚度在3至100μm的范围内。 当温度为23℃时的断裂强度为80MPa以上。 当温度为150℃时的弹性模量为2.3GPa以上。 而且，当a为温度为-65℃时的断裂强度a为MPa，当温度为150℃时为MPa为断裂强度，b为MPa时的断裂强度（a / b）为≤2.5， 强度a和b，并且将弹性模量c和d设定为填充由绝对值（c / da / b）≤0.8表示的不等式，其中GPa中的c是温度为-65°时的弹性模量 GPa中的C和D是当温度为150℃时的弹性模量。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005175510A

公开(公告)日：2005-06-30

申请号：JP2005010033

申请日：2005-01-18

Applicant: Nec Corp ,  日本電気株式会社

Inventor： ORITO NAONORI ,  KIKUCHI KATSU ,  MATSUI KOJI ,  BABA KAZUHIRO

IPC: H01L23/12

CPC classification number: H01L2224/73204

Abstract: PROBLEM TO BE SOLVED: To provide a wiring substrate for mounting a semiconductor device which can realize a higher density and finer wiring to cope with the increase in the number of terminals of the semiconductor device and the tendency toward narrower pitches, and a narrower pitch of an external electrode to cope with a more compact and higher density system, and superior in mounting reliability. SOLUTION: The wiring substrate for mounting the semiconductor device comprises an insulating layer 6 composed of a single layer, wiring 8 formed on the upper surface of the insulating layer, electrodes 5 each of which is formed under the lower surface of the insulating layer so that at least the circumferential side of the upper end of the electrode is in contact with the insulating layer and at least the circumferential side of the lower end of the electrode is not in contact with the insulating layer while protruding its lower end from the lower surface of the insulating layer, vias 7 each of which is formed on the upper surface of the electrode in the insulating layer so as to conduct between the electrode and the wiring, and a supporting body 16 arranged on the surface of the insulating layer. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于安装半导体器件的布线基板，其能够实现更高密度和更精细的布线，以应对半导体器件的端子数量的增加和窄的间距的趋势，以及 外部电极的间距较窄，以应对更紧凑和更高密度的系统，并且具有优异的安装可靠性。 解决方案：用于安装半导体器件的布线基板包括由单层构成的绝缘层6，形成在绝缘层的上表面上的布线8，每个形成在绝缘层的下表面下方的电极5 使得至少电极的上端的周向侧与绝缘层接触，并且至少电极的下端的周向侧不与绝缘层接触，同时将其下端从 绝缘层的下表面，绝缘层中的电极的上表面上形成的通孔7，以在电极和布线之间导电，以及布置在绝缘层的表面上的支撑体16。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004006990A

公开(公告)日：2004-01-08

申请号：JP2003299312

申请日：2003-08-22

Applicant: NEC CORP

Inventor： KIKUCHI KATSU ,  ORITO NAONORI ,  BABA KAZUHIRO ,  MATSUI KOJI

IPC: H01L23/12

Abstract: PROBLEM TO BE SOLVED: To provide a new semiconductor package substrate which is quipped with a large number of pins, easily improved in density, miniaturized, superior in reliability, and not required to be equipped with a stiffener by reforming a conventional semiconductor package substrate and improving a multilayer wiring structure film in evenness and to provide a semiconductor device using the new semiconductor package substrate. SOLUTION: The multilayer wiring structure film 15 is laminated on a metal base 11 of a metal plate having an opening in which a semiconductor device 16 is fitted, the semiconductor device 16 is fitted into the opening formed in the metal base 11 and connected to a metal pad 12 in a flip-chip mounting manner. Furthermore, solder balls 19 for BGA are mounted on a metal pad 29. At this point, the surface of the semiconductor device 16 is arranged on the same plane with the that of the metal base 11. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2001066558A

公开(公告)日：2001-03-16

申请号：JP24546799

申请日：1999-08-31

Applicant: NEC CORP

Inventor： BABA KAZUHIRO ,  SHIMURA KENICHI

IPC: C08J7/04 ,  C01B33/02 ,  C08J7/00 ,  G02C7/04

Abstract: PROBLEM TO BE SOLVED: To make it possible to impart high hydrophilicity, excellent wearing feel and sufficient mechanical strength in combination to a contact lens by forming a carbon film to at least part of its surface. SOLUTION: The carbon film is formed to at least a portion of the contact lens. This carbon film exhibits a particularly excellent effect with the hard contact lens. The materials of the hard contact lens include polymethyl methacrylate, siloxanyl methacrylate, siloxanyl styrene or the materials prepared by compounding these materials with methyl methacrylate and fluoromethacrylate and further, polymer consisting of fumarate, etc. The carbon film is preferably formed at the circumferential edge portion and concave face portion of the lens, i.e., the surface in direct contact with the eyeballs. More preferably the carbon film is formed over the entire surface of the contact lens.

公开(公告)号：JPH05163575A

公开(公告)日：1993-06-29

申请号：JP35077991

申请日：1991-12-12

Applicant: NEC CORP

Inventor： OBATA TAKESHI ,  BABA KAZUHIRO

IPC: C23C16/50 ,  H01L21/205 ,  H01L21/31 ,  H05H1/32

Abstract: PURPOSE:To form a uniform thin film of a large area without leaving a gap on an insulating substrate by DC glow discharge plasma CVD with a simple device. CONSTITUTION:A thin conductor film 14 is formed on an insulating substrate 13 and the periphery of the resulting substrate 17 is coated with an annular conductor sheet 16. The inside of the sheet 16 and the top of the periphery of the film 14 are brought into linear contact with each other and the substrate 17 and the conductor sheet 16 are kept at the same electric potential so as to prevent the generation of arc. The desired thin film 15 is then formed on the substrate 17 by DC glow discharge plasma CVD.

公开(公告)号：JPH056532A

公开(公告)日：1993-01-14

申请号：JP18419291

申请日：1991-06-28

Applicant: NEC CORP

Inventor： SHOHATA NOBUAKI ,  BABA KAZUHIRO ,  OBATA TAKESHI

IPC: G11B5/72 ,  G11B5/82

Abstract: PURPOSE:To provide the magnetic disk having a surface protective layer having high hardness, excellent adhesion and wear resistance and lubricity in combination. CONSTITUTION:A tungsten carbide (WXC) film 4 is provided on a magnetic disk base body 1 and a hard amorphous carbon film 5 contg. hydrogen, silicon and fluorine is then provided. The hydrogen content of the hard amorphous carbon film 5 is preferably 10 to 30 atomic %, the silicon content 100atomicppm to 0.1 atomic % and the fluorine content 500atomicppm to 1000atomicppm.

公开(公告)号：JPH056531A

公开(公告)日：1993-01-14

申请号：JP18419191

申请日：1991-06-28

Applicant: NEC CORP

Inventor： BABA KAZUHIRO ,  OBATA TAKESHI

IPC: G11B5/72 ,  C10M103/00 ,  C10M103/02 ,  C10N40/18 ,  G11B5/82

Abstract: PURPOSE:To obtain a protective film having high hardness and excellent wear resistance and lubricity even at

公开(公告)号：JPH04347586A

公开(公告)日：1992-12-02

申请号：JP11965791

申请日：1991-05-24

Applicant: NEC CORP

Inventor： BABA KAZUHIRO ,  MYOGA OSAMU

IPC: H02N2/00

Abstract: PURPOSE:To provide an ultrasonic motor which can be continuously driven for a long time. CONSTITUTION:An ultrasonic motor in which a silicon film 12 having a thickness of 0.01mum or larger is formed as an intermediate layer on a sliding surface of one 11 of a rotor disposed in pressure contact with a stator and the stator which is formed of a longitudinal/torsional composite vibrator and a hard amorphous carbon film 13 having a thickness of 0.01mum or larger and an average roughtness of 0.03-0.3mum along a center line is formed on the intermediate layer to improve its wear resistance.

公开(公告)号：JPH04338628A

公开(公告)日：1992-11-25

申请号：JP13950591

申请日：1991-05-16

Applicant: NEC CORP

Inventor： AIKAWA YUMI ,  BABA KAZUHIRO

IPC: G03F1/22 ,  H01L21/027

Abstract: PURPOSE:To provide a mask for an X-ray lithography having the membrane which has no slackness, a small inner stress, and an excellent mechanical strength, as well as the side ends of the silicon frame which are precisely machined. CONSTITUTION:In a mask for an X-ray lighography using diamond films, a stress relaxation film 12 is formed between a silicon wafer 11 which is a substrate and a diamond film 13 which transmits X rays. Also, when a membrane is formed, the mask which is patterned by dry etching a diamond film 10 is used.