公开(公告)号：CA2945597C

公开(公告)日：2019-01-15

申请号：CA2945597

申请日：2015-04-15

Applicant: NEC CORP

Inventor： KURASHINA SEIJI ,  MIYOSHI MASARU

IPC: G01J1/02

Abstract: A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2a formed on the substrate 2, wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

公开(公告)号：CA2945597A1

公开(公告)日：2015-10-22

申请号：CA2945597

申请日：2015-04-15

Applicant: NEC CORP

Inventor： KURASHINA SEIJI ,  MIYOSHI MASARU

IPC: G01J1/02

Abstract: A terahertz-wave detector having a thermal separation structure in which a temperature detection unit (14) including a bolometer thin film (7) connected to electrode wiring (9) is supported so as to be lifted above a substrate (2) by a support part (13) including electrode wiring (9) connected to a reading circuit (2a) formed on the substrate (2), wherein the terahertz-wave detector is provided with a reflective film (3) that is formed on the substrate (2) and reflects terahertz waves and an absorption film (11) that is formed on the temperature detection unit (14) and absorbs terahertz waves and the reflective film (3) is integrally formed with the reflective film of an adjacent terahertz-wave detector.

公开(公告)号：EP3133379A4

公开(公告)日：2017-11-22

申请号：EP15780439

申请日：2015-04-15

Applicant: NEC CORP

Inventor： KURASHINA SEIJI ,  MIYOSHI MASARU

IPC: G01J1/02 ,  G01J5/08 ,  G01J5/20

CPC classification number: G01J5/10 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/0803 ,  G01J5/0809 ,  G01J5/20 ,  G01J2005/103

Abstract: A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2a formed on the substrate 2, wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

公开(公告)号：JP2012194080A

公开(公告)日：2012-10-11

申请号：JP2011058693

申请日：2011-03-17

Applicant: Nec Corp ,  日本電気株式会社

Inventor： KURASHINA HARUJI ,  MIYOSHI MASARU

IPC: G01J1/02

CPC classification number: G01J5/045 ,  G01J5/0215 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/06 ,  G01J5/0853 ,  G01J5/20

Abstract: PROBLEM TO BE SOLVED: To provide a high-sensitivity bolometer type THz wave detector which can be manufactured with a high manufacturing yield ratio.SOLUTION: A bolometer type THz wave detector has a thermal isolation structure in which a supporting unit including electrical wiring connected to a readout circuit formed in a substrate supports a temperature detecting unit including a bolometer thin film connected to the electrode wiring with a gap from the substrate. A reflective film reflecting THz waves is formed in a position on the substrate facing the temperature detecting unit, and an absorbing film absorbing the THz waves is formed on the front face, rear face of or inside the temperature detecting unit. The reflective film and the absorbing film form an optical resonant structure, and a dielectric body transparent to the THz waves is formed on the reflective film. The film thickness of the dielectric body is set such that the interval (air gap) between the upper surface of the dielectric body and the lower surface of the temperature detecting unit is less than 8 μm.

Abstract translation: 要解决的问题：提供可以以高制造成品率制造的高灵敏度测辐射热谱仪型的太赫兹波检测器。 解决方案：测辐射热计型太赫兹波检测器具有热隔离结构，其中包括连接到形成在基板中的读出电路的电线的支撑单元支撑温度检测单元，该温度检测单元包括连接到电极布线的测辐射热计薄膜， 与基板间隙。 在面向温度检测单元的基板上形成反射太赫兹波的反射膜，并且在温度检测单元的正面，背面或内部形成吸收太赫兹波的吸收膜。 反射膜和吸收膜形成光学谐振结构，并且在反射膜上形成对THz波透明的电介质体。 电介质体的膜厚设定为使得电介质体的上表面与温度检测单元的下表面之间的间隔（气隙）小于8μm。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010210293A

公开(公告)日：2010-09-24

申请号：JP2009054227

申请日：2009-03-06

Applicant: Nec Corp ,  日本電気株式会社

Inventor： SHIMOMURA TOMOKO ,  MIYOSHI MASARU ,  KURASHINA HARUJI

IPC: G01J1/02 ,  G01J5/48 ,  H01L27/14 ,  H01L37/02

Abstract: PROBLEM TO BE SOLVED: To improve detection sensitivity of a thermal infrared sensor by increasing an infrared absorption rate of an infrared-absorbing layer.
SOLUTION: This thermal infrared sensor includes: an infrared-receiving section 11; and an infrared-absorbing film held through a hollow section on a circuit board 1 for transmitting heat acquired by thermally converting incident infrared rays to the infrared-receiving section 11. A projecting section or a recessed section having a width which is larger than the film thickness of the infrared-absorbing film, and less than ten times the film thickness is formed on an infrared-incident surface of the infrared-absorbing film and on a transmission surface on the hollow section side which is the rear surface of the incident surface.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过增加红外线吸收层的红外吸收率来提高热红外传感器的检测灵敏度。 解决方案：该热红外传感器包括：红外线接收部分11; 以及红外线吸收膜，其通过电路板1上的中空部保持，用于将通过将入射的红外线热转换为红外线接收部11而获得的热量。具有大于该膜的宽度的突出部或凹部 在红外线吸收膜的红外线入射面和作为入射面的背面的中空部侧的透射面上形成红外线吸收膜的厚度，薄膜厚度的10倍以下。 版权所有（C）2010，JPO＆INPIT