公开(公告)号：EP4286947A1

公开(公告)日：2023-12-06

申请号：EP21922911.9

申请日：2021-01-29

Applicant: NIKON CORPORATION

Inventor： MURAKAMI, Koichi ,  TAKIGAMI, Koutarou ,  ABE, Tetsuya

IPC: G03F7/20

Abstract: The present invention provides an exposure apparatus capable of precise pattern shaping. An exposure apparatus of the present invention includes: a light source that emits exposure light; an exposure pattern forming apparatus including a plurality of exposure elements and disposed on an optical path of at least part of the exposure light; and a control unit electrically connected to the exposure pattern forming apparatus, in which the control unit controls whether the workpiece is irradiated with the exposure light via each of the exposure elements by switching each of the exposure elements to a first state or a second state, and integrates an exposure amount in a predetermined region of the scheduled exposure region by sequentially irradiating the predetermined region with light of part of the exposure light via a first exposure element in the first state among the plurality of exposure elements and light of part of the exposure light via a second exposure element in the first state different from the first exposure element among the plurality of exposure elements in accordance with a relative movement of the workpiece and the exposure pattern forming apparatus.

公开(公告)号：EP1854769B1

公开(公告)日：2012-01-25

申请号：EP06713315.7

申请日：2006-02-08

Applicant: NIKON CORPORATION

Inventor： MIZUGUCHI, Masafumi ,  ABE, Tetsuya

IPC: C03B20/00 ,  C03C3/06 ,  G01N21/64

CPC classification number: G01N21/64 ,  C03B11/08 ,  C03B23/0013 ,  C03B40/02 ,  C03B2201/03 ,  C03C3/06 ,  C03C23/0075 ,  C03C2201/32 ,  C03C2201/40 ,  C03C2203/52 ,  G01N21/6402 ,  Y02P40/57

Abstract: A method of molding a synthetic silica glass molded body by accommodating a synthetic silica glass block in a mold provided with a pressing portion, and by pressing the block while heating, the method comprising: a step of washing the synthetic silica glass block so that a concentration of copper which is present on the surface of the synthetic silica glass block is 2 ng/cm 2 or less, and so that a concentration of aluminium thereon is 10 ng/cm 2 or less, before accommodating the synthetic silica glass block in the mold; a step of heating high purity carbon powders in which a content of copper is 40 wt.ppb or less and a content of aluminium is 100 wt.ppb or less at a temperature condition of 1200°C to 1900°C; a step of heating the mold at a temperature condition of 1700°C to 1900°C; a step of applying the high purity carbon powders after the heating step on the inner surface of the mold after the heating step, before accommodating the synthetic silica glass block in the mold; and a step of molding the synthetic silica glass block in a predetermined form by pressing the block by means of the pressing portion while heating so as to the temperature of the block can be within a hold temperature range of 1500°C to 1700°C, after accommodating the washed synthetic silica glass block in the mold.

公开(公告)号：EP2146244B1

公开(公告)日：2016-03-16

申请号：EP08751903.9

申请日：2008-04-22

Applicant: Nikon Corporation

Inventor： ABE, Tetsuya ,  NITTA, Yuhei ,  KIMURA, Yukiyasu

IPC: C03B23/025 ,  G03F7/20 ,  G03F1/00 ,  G03F1/60

CPC classification number: G03F7/70783 ,  C03B23/0252 ,  G03F1/60 ,  Y02P40/57

Abstract: A photomask substrate with a substantially uniform thickness comprises: a first surface, which is a continuous curved surface whereon a mask pattern is to be formed; and a second surface. The first surface exhibits a square shape that comprises an opposing pair of first set sides and an opposing pair of second set sides and has support parts at end parts along the first set sides. When the photomask substrate is held such that the first surface is in a substantially vertical state, a reference plane that is parallel to a tangential plane of the first surface at the center point of the first surface is defined on the photomask substrate side that is closer to the first surface than to the second surface. At this time, a first distance in the thickness direction between the reference plane and the center point of the first surface is shorter than second distances in the thickness direction between the reference plane and the midpoints of the second set sides.

公开(公告)号：EP1783103B1

公开(公告)日：2011-08-24

申请号：EP05765431.1

申请日：2005-06-29

Applicant: NIKON CORPORATION

Inventor： ABE, Tetsuya ,  YAJIMA, Shouji

IPC: C03B20/00 ,  C03B11/00

CPC classification number: C03B11/16 ,  C03B32/005 ,  C03B2201/075 ,  C03B2215/66

Abstract: A method of molding a silica glass comprises: a first step of accommodating the silica glass containing OH groups in a concentration of 900 ppm to 1300 ppm by mass in a hollow portion of a mold provided with a press portion; a second step of molding the silica glass in a predetermined form by pressing the same by means of the pressing portion so that a maximum pressure can be 0.2 Kg/cm 2 to 0.8 Kg/cm 2 while heating the silica glass so that the temperature of the same can be within a hold temperature range of 1530°C to 1630°C; and a third step of cooling the molded silica glass.

公开(公告)号：EP1783103A1

公开(公告)日：2007-05-09

申请号：EP05765431.1

申请日：2005-06-29

Applicant: NIKON CORPORATION

Inventor： ABE, Tetsuya ,  YAJIMA, Shouji

IPC: C03B20/00 ,  C03B11/00

CPC classification number: C03B11/16 ,  C03B32/005 ,  C03B2201/075 ,  C03B2215/66

Abstract: A method of molding a silica glass comprises:
a first step of accommodating the silica glass containing OH groups in a concentration of 900 ppm to 1300 ppm by mass in a hollow portion of a mold provided with a press portion;
a second step of molding the silica glass in a predetermined form by pressing the same by means of the pressing portion so that a maximum pressure can be 0.2 Kg/cm 2 to 0.8 Kg/cm 2 while heating the silica glass so that the temperature of the same can be within a hold temperature range of 1530°C to 1630°C; and
a third step of cooling the molded silica glass.

Abstract translation: 一种成型石英玻璃的方法包括：在具有压制部分的模具的中空部分中容纳含有900ppm至1300ppm浓度的OH基团的石英玻璃的第一步骤; 第二步是通过按压部分压制预定形式的石英玻璃，使得最大压力可以为0.2Kg / cm 2至0.8Kg / cm 2，同时加热二氧化硅玻璃使得二氧化硅玻璃的温度 同样可以在1530℃至1630℃的保持温度范围内; 以及冷却模制石英玻璃的第三步骤。

公开(公告)号：EP2146244A1

公开(公告)日：2010-01-20

申请号：EP08751903.9

申请日：2008-04-22

Applicant: Nikon Corporation

Inventor： ABE, Tetsuya ,  NITTA, Yuhei ,  KIMURA, Yukiyasu

IPC: G03F1/14 ,  H01L21/027

CPC classification number: G03F7/70783 ,  C03B23/0252 ,  G03F1/60 ,  Y02P40/57

Abstract: A photomask substrate with a substantially uniform thickness comprises: a first surface, which is a continuous curved surface whereon a mask pattern is to be formed; and a second surface. The first surface exhibits a square shape that comprises an opposing pair of first set sides and an opposing pair of second set sides and has support parts at end parts along the first set sides. When the photomask substrate is held such that the first surface is in a substantially vertical state, a reference plane that is parallel to a tangential plane of the first surface at the center point of the first surface is defined on the photomask substrate side that is closer to the first surface than to the second surface. At this time, a first distance in the thickness direction between the reference plane and the center point of the first surface is shorter than second distances in the thickness direction between the reference plane and the midpoints of the second set sides.

Abstract translation: 具有基本均匀厚度的光掩模基板包括：第一表面，其是要形成掩模图案的连续弯曲表面; 和第二表面。 第一表面呈现正方形形状，其包括相对的一对第一组侧面和相对的第二组侧面，并且在沿着第一组侧面的端部处具有支撑部分。 当光掩模基板被保持使得第一表面处于基本垂直状态时，在第一表面的中心点处平行于第一表面的切向平面的参考平面被限定在更接近的光掩模基板侧 到第一表面而不是第二表面。 此时，基准面与第一面的中心点之间的厚度方向上的第一距离比基准面与第二侧面的中点之间的厚度方向的第二距离短。

公开(公告)号：EP1854769A1

公开(公告)日：2007-11-14

申请号：EP06713315.7

申请日：2006-02-08

Applicant: NIKON CORPORATION

Inventor： MIZUGUCHI, Masafumi ,  ABE, Tetsuya

IPC: C03B20/00 ,  C03C3/06 ,  G01N21/64

CPC classification number: G01N21/64 ,  C03B11/08 ,  C03B23/0013 ,  C03B40/02 ,  C03B2201/03 ,  C03C3/06 ,  C03C23/0075 ,  C03C2201/32 ,  C03C2201/40 ,  C03C2203/52 ,  G01N21/6402 ,  Y02P40/57

Abstract: A method of molding a synthetic silica glass molded body by accommodating a synthetic silica glass block in a mold provided with a pressing portion, and by pressing the block while heating, the method comprising:
a step of washing the synthetic silica glass block so that a concentration of copper which is present on the surface of the synthetic silica glass block is 2 ng/cm 2 or less, and so that a concentration of aluminium thereon is 10 ng/cm 2 or less, before accommodating the synthetic silica glass block in the mold;
a step of heating high purity carbon powders in which a content of copper is 40 wt.ppb or less and a content of aluminium is 100 wt.ppb or less at a temperature condition of 1200°C to 1900°C;
a step of heating the mold at a temperature condition of 1700°C to 1900°C;
a step of applying the high purity carbon powders after the heating step on the inner surface of the mold after the heating step, before accommodating the synthetic silica glass block in the mold; and
a step of molding the synthetic silica glass block in a predetermined form by pressing the block by means of the pressing portion while heating so as to the temperature of the block can be within a hold temperature range of 1500°C to 1700°C, after accommodating the washed synthetic silica glass block in the mold.

Abstract translation: 一种合成石英玻璃成形体的成型方法，其特征在于，在具有加压部的模具中容纳合成石英玻璃块，并且在加热的同时按压块，所述方法包括：洗涤合成石英玻璃块，使得 存在于合成石英玻璃块的表面上的铜的浓度为2ng / cm 2以下，并且在将合成石英玻璃块容纳在其中之前，其上的铝浓度为10ng / cm 2以下 模子; 在1200℃〜1900℃的温度条件下，对铜的含量为40重量ppm以下且铝的含量为100重量ppm以下的高纯度碳粉末进行加热的工序; 在1700℃至1900℃的温度条件下加热模具的步骤; 在将合成石英玻璃块容纳在模具中之后，在加热步骤之后将高纯度碳粉末加热到加热步骤后的模具的内表面上的步骤; 以及通过在加热的同时通过按压部分压块而使所述合成石英玻璃块成型为使得所述块的温度可以在1500℃至1700℃的保持温度范围内的步骤， 在将洗涤的合成石英玻璃块容纳在模具中之后。