公开(公告)号：US20140030873A1

公开(公告)日：2014-01-30

申请号：US13680301

申请日：2012-11-19

Applicant: National Taiwan University of Science and Technology

Inventor： Yung-jr HUNG ,  San-liang LEE

IPC: H01L21/306 ,  H01L21/20

CPC classification number: H01L21/30604 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/304 ,  H01J2201/3043 ,  H01L21/20 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/0676 ,  H01L29/16 ,  H01L31/035227

Abstract: A method for fabricating a patterned silicon nanowire array is disclosed. The method includes: forming a patterned protective layer on silicon nanowire array structures, forming a patterned protective layer on the array of silicon nanowire structures, the patterned protective layer defining a covered region and a uncovered region on the array of silicon nanowire structures; using a selective etching to remove the array of silicon nanowire structures defined on the uncovered region; and removing the patterned protective layer remained on the array of silicon nanowire structures. A method for fabricating a silicon microstructure is also disclosed.

Abstract translation: 公开了一种制造图案化硅纳米线阵列的方法。 该方法包括：在硅纳米线阵列结构上形成图案化的保护层，在硅纳米线结构阵列上形成图案化保护层，图案化保护层限定硅纳米线结构阵列上的覆盖区域和未覆盖区域; 使用选择性蚀刻去除限定在未覆盖区域上的硅纳米线结构阵列; 并且去除图案化的保护层留在硅纳米线结构的阵列上。 还公开了一种用于制造硅微结构的方法。