公开(公告)号：EP1467241B1

公开(公告)日：2009-10-07

申请号：EP03026664.7

申请日：2003-11-19

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Scott, David C. ,  Vang, Timothy A. ,  Wang, Wenshen

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F2201/126

公开(公告)号：EP1271210B1

公开(公告)日：2008-07-16

申请号：EP02003146.4

申请日：2002-02-14

Applicant: NORTHROP GRUMMAN CORPORATION ,  The Arizona Board of Regents on behalf of The University of Arizona

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Leight, James E. ,  Fallahi, Mahmoud (NMI)

IPC: G02B6/42 ,  H01L27/14 ,  H01L27/15

CPC classification number: G02B6/43 ,  G02B6/132 ,  G02B6/42 ,  G02B6/4228

公开(公告)号：EP1394911A3

公开(公告)日：2005-06-08

申请号：EP03016613.6

申请日：2003-07-29

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Nesnidal, Michael P. ,  Forbes, David V.

IPC: H01S5/12 ,  G02B6/124

CPC classification number: H01L21/02543 ,  G02B5/1861 ,  G02B6/124 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01S5/1231

Abstract: An optical diffracting device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14) to provide alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) etched to form openings (68) between the dielectric strips (66). A semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips. Either embodiment may be modified to provide a diffraction grating with air channels (20) using the second semiconductor layer (16) as sacrificial layer.

公开(公告)号：EP1394911B1

公开(公告)日：2008-02-27

申请号：EP03016613.6

申请日：2003-07-29

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Nesnidal, Michael P. ,  Forbes, David V.

IPC: H01S5/12 ,  G02B6/124

CPC classification number: H01L21/02543 ,  G02B5/1861 ,  G02B6/124 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01S5/1231

公开(公告)号：EP1394578A2

公开(公告)日：2004-03-03

申请号：EP03016611.0

申请日：2003-07-29

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Nesnidal, Michael P. ,  Forbes, David V.

IPC: G02B6/12

CPC classification number: G02B5/1857 ,  G02B6/124 ,  G02B6/132

Abstract: An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14), resulting in alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) is etched to form openings (68) between the dielectric strips (66). Another semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips (66). Either embodiment may be modified to provide diffraction grating with air channels (20).

Abstract translation: 一种光学器件（10）包括其上沉积有介电层图案化和蚀刻并形成介质带（14），其为衍射光栅层的一部分上的所有的第一半导体层（12）。 另一半导体层（16）生长在介质条（14）之间的所述第一半导体层（12）上，以交替的介电部（14）和半导体部分所得。 在一个替代实施例中，介电层沉积在第一半导体层（64）上，并且被图案化和蚀刻，以限定电介质条带（66）。 在半导体层（64）被蚀刻以形成在介质带（66）之间的开口（68）。 另一种半导体材料（70）中的开口（68），然后另一半导体层（72）去除所述介质条（66）之后生长在整个表面内生长。 任一实施例可以被修改以提供衍射空气通道（20）光栅。

公开(公告)号：EP1760504A3

公开(公告)日：2009-05-27

申请号：EP06025839.9

申请日：2002-02-14

Applicant: Northrop Grumman Corporation ,  The Arizona Board of Regents on behalf of the University of Arizona

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Leight, James E. ,  Fallahi, Mahmoud (NMI)

IPC: G02B6/42 ,  H01L27/14 ,  H01L27/15

CPC classification number: G02B6/43 ,  G02B6/132 ,  G02B6/42 ,  G02B6/4228

Abstract: An integrated optoelectronic device (1) includes a substrate(4), at least one optoelectronic component (2) provided on the substrate (4), and a waveguide (9a ... 9n) provided on the substrate (4) and optically connected to the at least one optoelectronic component (2). The waveguide (9a ...9n) is made of a sol-gel glass. A method for making the integrated optoelectronic device (1) includes the steps of providing a substrate (4), providing at least one optoelectronic component (2) on the substrate (4), and providing at least one sol-gel glass waveguide (9a ... 9n) on the substrate (4) and optically connected to the at least one optoelectronic component (2).

公开(公告)号：EP1760504A2

公开(公告)日：2007-03-07

申请号：EP06025839.9

申请日：2002-02-14

Applicant: Northrop Grumman Corporation ,  Arizona Board of Regents on behalf of The University of Arizona

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Leight, James E. ,  Fallahi, Mahmoud (NMI)

IPC: G02B6/42 ,  H01L27/14 ,  H01L27/15

CPC classification number: G02B6/43 ,  G02B6/132 ,  G02B6/42 ,  G02B6/4228

Abstract: An integrated optoelectronic device (1) includes a substrate(4), at least one optoelectronic component (2) provided on the substrate (4), and a waveguide (9a ... 9n) provided on the substrate (4) and optically connected to the at least one optoelectronic component (2). The waveguide (9a ...9n) is made of a sol-gel glass. A method for making the integrated optoelectronic device (1) includes the steps of providing a substrate (4), providing at least one optoelectronic component (2) on the substrate (4), and providing at least one sol-gel glass waveguide (9a ... 9n) on the substrate (4) and optically connected to the at least one optoelectronic component (2).

Abstract translation: 集成光电子器件（1）包括衬底（4），设置在衬底（4）上的至少一个光电子部件（2）和设置在衬底（4）上的光学连接的波导（9a ... 9n） 到所述至少一个光电子部件（2）。 波导（9a ... 9n）由溶胶 - 凝胶玻璃制成。 一种用于制造集成光电子器件（1）的方法包括以下步骤：提供衬底（4），在衬底（4）上提供至少一个光电子部件（2），并提供至少一个溶胶 - 凝胶玻璃波导（9a ... 9n），并且光学连接到所述至少一个光电子部件（2）。

公开(公告)号：EP1467241A1

公开(公告)日：2004-10-13

申请号：EP03026664.7

申请日：2003-11-19

Applicant: Northrop Grumman Corporation

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Scott, David C. ,  Vang, Timothy A. ,  Wang, Wenshen

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F2201/126

Abstract: A coupled quantum well Mach-Zehnder modulator that employs a push-pull structure to reduce the modulation voltage. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device. The intrinsic layers of the PIN devices include a coupled quantum well structure to provide an opposite index of refraction change for different DC bias voltages. An RF signal used to modulate the light beam is applied to the two arms in phase and causes the index of refraction in the intrinsic layers of the two PIN devices to change in opposite directions so that a push-pull type drive is achieved without requiring 180° out-of-phase RF drive signal.

Abstract translation: 耦合量子阱马赫 - 曾德调制器采用推挽结构来降低调制电压。 马赫 - 策德尔调制器包括具有第一PIN半导体器件的第一臂和具有第二PIN半导体器件的第二臂。 PIN器件的本征层包括耦合的量子阱结构，以为不同的DC偏置电压提供相反的折射率变化。 用于调制光束的RF信号同时施加到两个臂上，并且使两个PIN器件的本征层中的折射率在相反的方向上改变，使得实现推挽式驱动，而不需要180° DEG异相RF驱动信号。

公开(公告)号：EP1394578A3

公开(公告)日：2004-06-16

申请号：EP03016611.0

申请日：2003-07-29

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Nesnidal, Michael P. ,  Forbes, David V.

IPC: G02B6/12

CPC classification number: G02B5/1857 ,  G02B6/124 ,  G02B6/132

Abstract: An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14), resulting in alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) is etched to form openings (68) between the dielectric strips (66). Another semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips (66). Either embodiment may be modified to provide diffraction grating with air channels (20).

Abstract translation: 一种包括第一半导体层（12）的光学器件（10），在所述第一半导体层上沉积电介质层，所述电介质层被图案化和蚀刻以形成作为衍射光栅层的一部分的介质带（14）。 在介质条（14）之间的第一半导体层（12）上生长另一半导体层（16），产生交替的介电部分（14）和半导体部分。 在一个替代实施例中，介电层被沉积在第一半导体层（64）上，并被图案化和蚀刻以定义介电带（66）。 刻蚀半导体层（64）以在介质条（66）之间形成开口（68）。 在开口（68）内生长另一种半导体材料（70），然后在除去介质带（66）之后在整个表面上生长另一半导体层（72）。 任一实施例都可以被修改以提供具有空气通道（20）的衍射光栅。

公开(公告)号：EP1394911A2

公开(公告)日：2004-03-03

申请号：EP03016613.6

申请日：2003-07-29

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Nesnidal, Michael P. ,  Forbes, David V.

IPC: H01S5/12 ,  G02B6/12 ,  H01L33/00

CPC classification number: H01L21/02543 ,  G02B5/1861 ,  G02B6/124 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01S5/1231

Abstract: An optical diffracting device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14) to provide alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) etched to form openings (68) between the dielectric strips (66). A semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips. Either embodiment may be modified to provide a diffraction grating with air channels (20) using the second semiconductor layer (16) as sacrificial layer.

Abstract translation: 一种包括第一半导体层（12）的光学衍射装置（10），其上沉积有图案和蚀刻的介质层，以形成作为衍射光栅层的一部分的介质条带（14）。 在介质条（14）之间的第一半导体层（12）上生长另一半导体层（16），以提供交替的电介质部分（14）和半导体部分。 在替代实施例中，电介质层沉积在第一半导体层（64）上，并被图案化和蚀刻以限定介电条（66）。 被蚀刻以在介质条（66）之间形成开口（68）的半导体层（64）。 在开口（68）内生长半导体材料（70），然后在除去介质条之后在整个表面上生长另一半导体层（72）。 可以修改任一实施例以使用第二半导体层（16）作为牺牲层来提供具有空气通道（20）的衍射光栅。