公开(公告)号：EP1467241B1

公开(公告)日：2009-10-07

申请号：EP03026664.7

申请日：2003-11-19

Applicant: NORTHROP GRUMMAN CORPORATION

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Scott, David C. ,  Vang, Timothy A. ,  Wang, Wenshen

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F2201/126

公开(公告)号：EP1467241A1

公开(公告)日：2004-10-13

申请号：EP03026664.7

申请日：2003-11-19

Applicant: Northrop Grumman Corporation

Inventor： Kunkee, Elizabeth T. ,  Forbes, David V. ,  Scott, David C. ,  Vang, Timothy A. ,  Wang, Wenshen

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F2201/126

Abstract: A coupled quantum well Mach-Zehnder modulator that employs a push-pull structure to reduce the modulation voltage. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device. The intrinsic layers of the PIN devices include a coupled quantum well structure to provide an opposite index of refraction change for different DC bias voltages. An RF signal used to modulate the light beam is applied to the two arms in phase and causes the index of refraction in the intrinsic layers of the two PIN devices to change in opposite directions so that a push-pull type drive is achieved without requiring 180° out-of-phase RF drive signal.

Abstract translation: 耦合量子阱马赫 - 曾德调制器采用推挽结构来降低调制电压。 马赫 - 策德尔调制器包括具有第一PIN半导体器件的第一臂和具有第二PIN半导体器件的第二臂。 PIN器件的本征层包括耦合的量子阱结构，以为不同的DC偏置电压提供相反的折射率变化。 用于调制光束的RF信号同时施加到两个臂上，并且使两个PIN器件的本征层中的折射率在相反的方向上改变，使得实现推挽式驱动，而不需要180° DEG异相RF驱动信号。

公开(公告)号：EP1473587A1

公开(公告)日：2004-11-03

申请号：EP03026666.2

申请日：2003-11-19

Applicant: Northrop Grumman Corporation

Inventor： Scott, David C. ,  Vang, Timothy A. ,  Wang, Wenshen ,  Kunkee, Elizabeth T.

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F2001/212 ,  G02F2201/126

Abstract: A single-electrode, push-pull semiconductor PIN Mach-Zehnder modulator (10) that includes first and second PIN devices (12, 14) on a substrate (16). Intrinsic layers (22, 28) of the devices (12, 14) are the active regions of two arms (50, 52) of a Mach-Zehnder interferometer. An outer electrode (38) is connected to the N layer (24) of the first PIN device (12) and a center electrode (40) is connected to the P layer (20) of the first PIN device (12). An outer electrode (42) is connected to the P layer (26) of the second PIN device (14) and the center electrode (40) is connected to the N layer (30) of the second PIN device (14). An RF modulation signal biases the PIN devices (12, 14) in opposite directions and causes the index refraction of the intrinsic layers (22, 28) to change in opposite directions to give a push-pull modulation effect.

Abstract translation: 包括衬底（16）上的第一和第二PIN器件（12,14）的单电极推挽半导体引脚马赫 - 曾德调制器（10）。 装置（12,14）的本征层（22,28）是马赫 - 曾德干涉仪的两个臂（50,52）的有源区域。 外部电极（38）连接到第一PIN器件（12）的N层（24），并且中心电极（40）连接到第一PIN器件（12）的P层（20）。 外部电极（42）连接到第二PIN器件（14）的P层（26），中心电极（40）连接到第二PIN器件（14）的N层（30）。 RF调制信号在相反方向上偏置PIN器件（12,14），并使本征层（22,28）的折射折射沿相反方向改变，以产生推挽调制效果。