公开(公告)号：JP2007227927A

公开(公告)日：2007-09-06

申请号：JP2007040801

申请日：2007-02-21

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： HEUSER KARSTEN ,  HUNZE ARVID ,  PAETZOLD RALPH

IPC: H01L51/50 ,  H05B37/02

CPC classification number: H05B33/0896

Abstract: PROBLEM TO BE SOLVED: To provide an illumination apparatus that can be used in an extremely wide-ranging purposes. SOLUTION: An illumination apparatus of the present invention has a light source incorporating an organic light emitting diode, and a control device controlling an intensity of current that flows through the organic light emitting diode so as to depend on a resistance of the organic light emitting diode. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供可以用于非常广泛目的的照明装置。 解决方案：本发明的照明装置具有包含有机发光二极管的光源和控制流过有机发光二极管的电流强度以便依赖于有机发光二极管的电阻的控制装置 发光二极管。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2008108731A

公开(公告)日：2008-05-08

申请号：JP2007277222

申请日：2007-10-25

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： KLEIN MARKUS ,  PAETZOLD RALPH ,  SARFERT WIEBKE

IPC: H05B33/26 ,  H01L51/50 ,  H05B33/28

CPC classification number: H01L51/5088 ,  H01L27/3239 ,  H01L51/0021 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5215 ,  H01L51/5225 ,  H01L51/5231 ,  H01L51/5253 ,  H01L2251/5315

Abstract: PROBLEM TO BE SOLVED: To enable structured radiation for an organic light-emitting diode(OLED), especially a fixed OLED, and to provide a method for manufacturing the OLED which performs the structured radiation. SOLUTION: The OLED comprises a substrate and an organic light-emitting layer which is placed between a transparent electrode and another electrode. At least one of the transparent electrode or the other electrode has two layers including a first structured layer which is a charge-carrier injected layer, and a second conductive layer which is embedded with the first layer. Alternatively or additionally, the organic light-emitting layer includes a structured charge-carrier blocking layer. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了实现有机发光二极管（OLED），特别是固定OLED的结构化辐射，并且提供用于制造执行结构化辐射的OLED的方法。 解决方案：OLED包括衬底和置于透明电极和另一电极之间的有机发光层。 透明电极或另一电极中的至少一个具有包括作为电荷载流子注入层的第一结构化层和嵌入第一层的第二导电层的两层。 或者或另外，有机发光层包括结构化的电荷载流子阻挡层。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009076461A

公开(公告)日：2009-04-09

申请号：JP2008240682

申请日：2008-09-19

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： KANITZ ANDREAS DR ,  PAETZOLD RALPH ,  SARFERT WIEBKE ,  SUHONEN RIIKKA

IPC: H05B33/26 ,  C08F8/42 ,  C09K11/06 ,  H01L51/50

CPC classification number: H01L51/5221 ,  H01L51/0003 ,  H01L51/0037 ,  H01L51/0094 ,  H01L51/441 ,  H01L51/5088

Abstract: PROBLEM TO BE SOLVED: To provide an electrode for implanting electrons to a polymer active organic semiconductor layer of an electronic structure element from a metal layer, that is, an organic electronic structure element to carry on n-type doping of caesium salt.
SOLUTION: The organic electronic structure element which is put under a solution treatment, contains a substrate, at least two single-layered or multi-layered electrodes, at least one active organic semiconductor layer between the electrodes, and an interlayer and/or an interface layer between the electrode layer and the active organic semiconductor layer. It further contains caesium salt of organic mono-, oligo- and poly-carboxylic acid, or sulfonic acid, as an n-type dopant in the interlayer and/or the interface layer.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于从金属层向电子结构元件的聚合物活性有机半导体层注入电子的电极，即进行n型掺杂铯盐的有机电子结构元件 。 解决方案：处于固溶处理的有机电子结构元件包含基板，至少两个单层或多层电极，电极之间的至少一个有源有机半导体层，以及中间层和/ 或电极层与活性有机半导体层之间的界面层。 它还含有作为中间层和/或界面层中的n型掺杂剂的有机单，低聚和多羧酸或磺酸的铯盐。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007073518A

公开(公告)日：2007-03-22

申请号：JP2006239597

申请日：2006-09-04

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： PAETZOLD RALPH ,  HUNZE ARVID ,  GAERDITZ CHRISTOPH ,  HEUSER KARSTEN ,  BOGNER ARICI ELIF

IPC: H05B33/02 ,  B82B1/00 ,  B82B3/00 ,  G02B1/04 ,  H01L51/50 ,  H05B33/10

CPC classification number: H01L51/5268 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/3124 ,  H01L51/5275 ,  H01L2251/5315 ,  H01L2251/5369

Abstract: PROBLEM TO BE SOLVED: To provide a radiation emitting device and a manufacturing method for the device.
SOLUTION: The device has a substrate, a radiation emitting functional area on the substrate and a radiation out-coupling material containing polysilsesquioxane and inorganic nanoparticles arranged in the optical path of the radiation emitting functional area. The device has a higher luminance due to an increased fraction of out-coupled radiation in comparison to a device having no radiation out-coupling material.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于该装置的辐射发射装置和制造方法。 解决方案：该装置具有衬底，衬底上的辐射发射功能区域和布置在辐射发射功能区的光路中的聚倍半硅氧烷和无机纳米颗粒的辐射输出耦合材料。 与没有辐射输出耦合材料的器件相比，由于外耦合辐射的分数增加，器件具有更高的亮度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004338377A

公开(公告)日：2004-12-02

申请号：JP2004066095

申请日：2004-03-09

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： HEUSER KARSTEN ,  WITTMANN GEORG ,  GIERES GUENTER ,  PAETZOLD RALPH ,  HENSELER DEBORA

IPC: B32B18/00 ,  B32B27/00 ,  C23C14/06 ,  C23C14/22 ,  C23C16/30 ,  C23C16/44

CPC classification number: C23C16/56 ,  B32B27/00 ,  C23C14/22 ,  C23C16/44

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming the arrangement of two barrier layers on a polymer support. SOLUTION: The method has (A) a process for applying a first ceramic barrier layer on the support, (B) a process for introducing a nucleus-forming site on the surface of the first layer by modifying the surface of the first barrier layer, and (C) a process for forming a second ceramic barrier layer on the first barrier layer by using a new nucleus-forming site. The second ceramic layer can be deposited by the independent nucleus-forming site. As a result, a barrier laminated body having improved quality can be formed. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：DE102007045518B4

公开(公告)日：2010-12-16

申请号：DE102007045518

申请日：2007-09-24

Applicant: SIEMENS AG ,  OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KANITZ ANDREAS ,  PAETZOLD RALPH ,  SARFERT WIEBKE ,  SUHONEN RIIKKA

IPC: H01L51/54 ,  C09K11/06

公开(公告)号：DE102009022900A1

公开(公告)日：2010-11-18

申请号：DE102009022900

申请日：2009-05-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHLENKER TILMAN ,  PAETZOLD RALPH

IPC: H01L51/52 ,  H01L21/28 ,  H01L33/00 ,  H01L51/56

Abstract: Die Erfindung betrifft ein optoelektronisches Bauelement mit einem Substrat, einer Anode und einer Kathode sowie mindestens einer zwischen der Anode ut auf der kathodenseitigen Oberfläche der Anode ist eine amorphe dielektrische Schicht, die ein Metalloxid, ein Metallnitrid oder ein Metalloxinitrid enthält oder daraus besteht, angeordnet. Das im Metalloxid, Metallnitrid oder Metalloxinitrid enthaltene Metall ist ausgewählt aus einem oder mehreren der Metalle der Gruppe bestehend aus Aluminium, Gallium, Titan, Zirkonium, Hafnium, Tantal, Lanthan und Zink.

公开(公告)号：DE102008048472A1

公开(公告)日：2010-03-25

申请号：DE102008048472

申请日：2008-09-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KLEIN MARKUS ,  HEUSER KARSTEN ,  SCHLENKER TILMAN ,  PAETZOLD RALPH

IPC: H01L51/52

Abstract: Production of an electronic component encapsulated in barrier layers involves (a) applying first barrier layer(s) (3) to a functional layer of a substrate (1) by plasma-less atomic layer deposition (PLALD) and (b) applying second barrier layer(s) (4) to the functional layer by plasma-enhanced chemical vapor deposition (PECVD). An independent claim is included for an organic opto-electronic component obtained by the process.

公开(公告)号：DE102008045948A1

公开(公告)日：2010-03-11

申请号：DE102008045948

申请日：2008-09-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GAERDITZ CHRISTOPH ,  PAETZOLD RALPH

IPC: H01L51/56 ,  H01L51/50

Abstract: A method for producing an organic radiation-emitting component is specified, which comprises, in particular, the following method steps: A) providing a first electrode layer (2) on a substrate (1), B) applying a structured electrically conductive layer (3) on the first electrode layer (2), wherein the electrically conductive layer (3) comprises a metal, C) producing an electrically insulating layer (4) comprising an oxide of the metal of the electrically conductive layer (3) on surfaces (31) of the electrically conductive layer (3) which are remote from the first electrode layer (2) by oxidation of the metal, D) applying at least one organic functional layer (5) on the first electrode layer (2) and the electrically insulating layer (4), and E) applying a second electrode layer (9) on the at least one organic functional layer (5). An organic radiation-emitting component is furthermore specified.

公开(公告)号：DE102007062040A1

公开(公告)日：2009-06-25

申请号：DE102007062040

申请日：2007-12-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GAERDITZ CHRISTOPH ,  HEUSER KARSTEN ,  PAETZOLD RALPH ,  HUNZE ARVID ,  ARICI BOGNER ELIF ,  BUCHHAUSER DIRK ,  TSCHAMBER CARSTEN

IPC: H01L51/52 ,  H01L33/00

Abstract: The device has a layer sequence with an electrode (2) i.e. anode, a radiation-emitting layer (3) on the electrode, and another electrode (4) i.e. cathode, on the radiation-emitting layer. The sequence is arranged on a substrate (1) that comprises side surfaces (A) and main surfaces (B) and is transparent to radiation. A third electrode arranged between the substrate and radiation-emitting layer is transparent to the emitted radiation. A radiation-directed primary element (5) directs the radiation towards the side surfaces and decreases the emission of the radiation over the main surfaces.