公开(公告)号：US20180062031A1

公开(公告)日：2018-03-01

申请号：US15557600

申请日：2016-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Stauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

IPC: H01L33/06 ,  H01L31/0352 ,  H01L29/15

CPC classification number: H01L31/0352 ,  H01L29/151 ,  H01L29/152 ,  H01L31/035236 ,  H01L33/06

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

公开(公告)号：US10510916B2

公开(公告)日：2019-12-17

申请号：US16306522

申请日：2017-05-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mohammad Tollabi Mazraehno ,  Peter Stauß ,  Alvaro Gomez-Iglesias

IPC: H01L31/105 ,  H01L31/0304 ,  H01L31/18

Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0≤n≤1, 0≤m≤1 and n+m

公开(公告)号：US20220393059A1

公开(公告)日：2022-12-08

申请号：US17771368

申请日：2020-10-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Peter Stauß ,  Alexander F. Pfeuffer ,  Christoph Klemp ,  Kerstin Neveling ,  Andreas Biebersdorf

IPC: H01L33/00 ,  H01L21/683

Abstract: In an embodiment a component composite includes an auxiliary carrier, a plurality of components, a retaining structure and an electrically conductive sacrificial layer, wherein each of the components has a connection layer which faces the sacrificial layer and is electrically conductively connected to the sacrificial layer, wherein the sacrificial layer is arranged in vertical direction between the auxiliary carrier and the components, and wherein the sacrificial layer is to be removable and the components are mechanically connected to the auxiliary carrier only via the retaining structure in addition to the sacrificial layer.

公开(公告)号：US20190109246A1

公开(公告)日：2019-04-11

申请号：US16196915

申请日：2018-11-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Stauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

IPC: H01L31/0352 ,  H01L33/06 ,  H01L29/15

CPC classification number: H01L31/0352 ,  H01L29/151 ,  H01L29/152 ,  H01L31/035236 ,  H01L33/06

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

公开(公告)号：US20190221703A1

公开(公告)日：2019-07-18

申请号：US16306522

申请日：2017-05-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mohammad Tollabi Mazraehno ,  Peter Stauß ,  Alvaro Gomez-Iglesias

IPC: H01L31/105 ,  H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544

Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0≤n≤1, 0≤m≤1 and n+m

公开(公告)号：US10164134B2

公开(公告)日：2018-12-25

申请号：US15557600

申请日：2016-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Asako Hirai ,  Tobias Meyer ,  Philipp Drechsel ,  Peter Stauß ,  Anna Nirschl ,  Alvaro Gomez-Iglesias ,  Tobias Niebling ,  Bastian Galler

IPC: H01L31/0352 ,  H01L29/15 ,  H01L33/06

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.

公开(公告)号：US20150364641A1

公开(公告)日：2015-12-17

申请号：US14763464

申请日：2014-01-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Werner Bergbauer ,  Philipp Drechsel ,  Peter Stauß ,  Patrick Rode

IPC: H01L33/00 ,  H01L33/22 ,  H01L31/0352 ,  H01L33/32 ,  H01L31/18 ,  H01L31/0304 ,  H01L33/24 ,  H01L33/02

CPC classification number: H01L33/0075 ,  H01L31/03044 ,  H01L31/035272 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.

Abstract translation: 半导体层序列包括第一氮化合物半导体层，第二氮化合物半导体层和布置在第一和第二氮化合物半导体层之间的中间层。 从第一氮化合物半导体层开始，中间层和第二氮化合物半导体层沿着半导体层序列的生长方向一个接一个地排列并且彼此直接相邻。 至少在某些点处，中间层具有与第一氮化合物半导体层的晶格常数不同的晶格常数。 至少在某些点，第二氮化合物半导体层对中间层进行晶格适应。