公开(公告)号：US10971653B2

公开(公告)日：2021-04-06

申请号：US16348662

申请日：2017-11-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Tonkikh ,  Peter Stauss

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/06

Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

公开(公告)号：US09184051B2

公开(公告)日：2015-11-10

申请号：US14346787

申请日：2012-09-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Stauss ,  Philipp Drechsel

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.

Abstract translation: 制造氮化物半导体元件的方法包括：提供具有硅表面的生长衬底，将包含含铝氮化物半导体的缓冲层生长到所述硅表面上，生长产生压应力的应力层结构，以及生长 功能半导体层序列到应力层结构上，其中应力层结构包括第一GaN半导体层和第二GaN半导体层，掩模层嵌入第一GaN半导体层中，Al（Ga）N-中间层， 在第一GaN半导体层和第二GaN半导体层之间产生压应力，并且应力层结构不包含另外的Al（Ga）N中间层。

公开(公告)号：US12199134B2

公开(公告)日：2025-01-14

申请号：US17515338

申请日：2021-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Behringer ,  Andreas Biebersdorf ,  Ruth Boss ,  Erwin Lang ,  Tobias Meyer ,  Alexander Pfeuffer ,  Marc Philippens ,  Julia Stolz ,  Tansen Varghese ,  Sebastian Wittmann ,  Siegfried Herrmann ,  Berthold Hahn ,  Bruno Jentzsch ,  Korbinian Perzlmaier ,  Peter Stauss ,  Petrus Sundgren ,  Jens Mueller ,  Kerstin Neveling ,  Frank Singer ,  Christian Mueller

IPC: H01L27/15 ,  H01L33/10 ,  H01L33/58

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US10923629B2

公开(公告)日：2021-02-16

申请号：US16348662

申请日：2017-11-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Tonkikh ,  Peter Stauss

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/06

Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

公开(公告)号：US20150228858A1

公开(公告)日：2015-08-13

申请号：US14427687

申请日：2013-09-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Werner Bergbauer ,  Philipp Drechsel ,  Peter Stauss ,  Patrick Rode

IPC: H01L33/32 ,  H01L33/02

CPC classification number: H01L33/325 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/32

Abstract: An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.

Abstract translation: 光电子部件包括具有第一氮化镓层和含铝氮化物中间层的层结构。 在这种情况下，含铝氮化物中间层与第一氮化镓层相邻。 层结构具有与含铝氮化物中间层相邻的未掺杂的第二氮化镓层。

公开(公告)号：US09660137B2

公开(公告)日：2017-05-23

申请号：US14891924

申请日：2014-05-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Werner Bergbauer ,  Philipp Drechsel ,  Peter Stauss ,  Patrick Rode

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/0075 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12

Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0≦x≦1, 0≦y≦1 and x+y≦1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.

公开(公告)号：US10249787B2

公开(公告)日：2019-04-02

申请号：US15559409

申请日：2016-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias Meyer ,  Thomas Lehnhardt ,  Matthias Peter ,  Asako Hirai ,  Juergen Off ,  Philipp Drechsel ,  Peter Stauss

IPC: H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01L33/06 ,  H01S5/34 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32

Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

公开(公告)号：US09184337B2

公开(公告)日：2015-11-10

申请号：US14335691

申请日：2014-07-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Stauss ,  Philipp Drechsel

IPC: H01L21/02 ,  H01L33/00

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639

Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Abstract translation: 提供了一种制造发光二极管的方法。 在一个实施例中，一系列层沿生长方向沉积在载体的硅表面上，并且发光二极管结构沉积在一系列层上。 该系列层包括由氮化镓形成的GaN层。 一系列层包括由氮化硅形成的掩模层。 掩模层在生长方向上遵循GaN层的至少一部分。

公开(公告)号：US20140329350A1

公开(公告)日：2014-11-06

申请号：US14335691

申请日：2014-07-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Stauss ,  Philipp Drechsel

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639

Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Abstract translation: 提供了一种制造发光二极管的方法。 在一个实施例中，一系列层沿生长方向沉积在载体的硅表面上，并且发光二极管结构沉积在一系列层上。 该系列层包括由氮化镓形成的GaN层。 一系列层包括由氮化硅形成的掩模层。 掩模层在生长方向上遵循GaN层的至少一部分。

公开(公告)号：US20140302665A1

公开(公告)日：2014-10-09

申请号：US14346787

申请日：2012-09-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Stauss ,  Philipp Drechsel

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.

Abstract translation: 制造氮化物半导体元件的方法包括：提供具有硅表面的生长衬底，将包含含铝氮化物半导体的缓冲层生长到所述硅表面上，生长产生压应力的应力层结构，以及生长 功能半导体层序列到应力层结构上，其中应力层结构包括第一GaN半导体层和第二GaN半导体层，掩模层嵌入第一GaN半导体层中，Al（Ga）N-中间层， 在第一GaN半导体层和第二GaN半导体层之间产生压应力，并且应力层结构不包含另外的Al（Ga）N中间层。