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    Component with reduced absorption and method for producing a component
    3.
    发明授权
    Component with reduced absorption and method for producing a component 有权

    公开(公告)号：US12057522B2

    公开(公告)日：2024-08-06

    申请号：US17632892

    申请日：2020-07-23

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Tansen Varghese ,  Petrus Sundgren

    IPC: H01L33/08 ,  H01L33/00 ,  H01L33/62

    CPC classification number: H01L33/08 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0066

    Abstract: Disclosed is method for making a component and a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.

    Light Emitting Diode Chip Having Temperature Compensation of the Wavelength
    6.
    发明申请
    Light Emitting Diode Chip Having Temperature Compensation of the Wavelength 审中-公开

    公开(公告)号：US20170271553A1

    公开(公告)日：2017-09-21

    申请号：US15532236

    申请日：2015-11-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Rudolph ,  Petrus Sundgren ,  Ivar Tangring

    IPC: H01L33/06 ,  H01L33/08

    CPC classification number: H01L33/06 ,  H01L33/08

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (EQW2) that is less than the electronic band gap (EQW1) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (EB2) that is greater than the electronic band gap (EB1) of the first barrier layers.

    Optoelectronic component, semiconductor structure and method
    7.
    发明授权
    Optoelectronic component, semiconductor structure and method 有权

    公开(公告)号：US12294039B2

    公开(公告)日：2025-05-06

    申请号：US17753957

    申请日：2020-03-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Biebersdorf ,  Stefan Illek ,  Felix Feix ,  Christoph Klemp ,  Ines Pietzonka ,  Petrus Sundgren ,  Christian Berger ,  Ana Kanevce

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30

    Abstract: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

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