公开(公告)号：WO2022223414A1

公开(公告)日：2022-10-27

申请号：PCT/EP2022/059939

申请日：2022-04-13

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SORG, Jörg Erich ,  HALBRITTER, Hubert ,  RUSSEL, Ann

IPC: G02B6/12 ,  G02B27/01 ,  G02B27/48

Abstract: A planar light circuit (1) comprises a substrate (13) and a first pixel (21). The first pixel comprises a first number N of laser diodes (10, 11, 12), a first waveguide (14) located on the substrate, a first number N of inlets (16, 17, 18) which couple the first number N of laser diodes to the first waveguide and a first outlet (19). The first waveguide couples the first number N of inlets to the first outlet. An arrangement (55) comprises the planar light circuit. The arrangement is realized as data glasses.

公开(公告)号：WO2022063483A1

公开(公告)日：2022-03-31

申请号：PCT/EP2021/072512

申请日：2021-08-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BEHRINGER, Martin Rudolf ,  HALBRITTER, Hubert ,  RUSSEL, Ann

IPC: H01S5/02 ,  H01S5/00 ,  H01S5/40 ,  H01S5/14 ,  H01S5/10 ,  H01S5/028 ,  G02B6/00 ,  H01S5/026 ,  H01S5/50

Abstract: An optoelectronic module (1) comprising at least one semiconductor laser (10) and a photonic chip (20) is described herein. The semiconductor laser (10) emits a primary electromagnetic radiation which is coupled into the photonic chip (20). The photonic chip (20) comprises at least one first waveguide (210) and at least one optical Bragg reflector (30) having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip (20) by means of at least one second waveguide (220), wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module (1) and a Head-Mounted Display comprising an optoelectronic module (1) are provided.

公开(公告)号：WO2022223365A2

公开(公告)日：2022-10-27

申请号：PCT/EP2022/059729

申请日：2022-04-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HALBRITTER, Hubert ,  RUSSEL, Ann

IPC: H01S5/11 ,  H01S5/026 ,  H01S5/187 ,  H01S5/00 ,  H01S5/40 ,  H01S5/42 ,  G02B27/48 ,  G03B21/20 ,  H04N9/31 ,  H01S5/042 ,  G02B1/005 ,  G02B26/101 ,  G02B27/281 ,  G03B21/2033 ,  H01S5/0071 ,  H01S5/34 ,  H01S5/4012 ,  H01S5/4075 ,  H01S5/4087 ,  H01S5/4093 ,  H04N9/3129 ,  H04N9/3164

Abstract: A semiconductor laser device comprises an active layer having a main extension plane, a first cladding layer and a second cladding layer where the active layer is arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, at least one first emission region and at least one second emission region arranged next to each other in a direction parallel to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, and a photonic crystal layer arranged in the first cladding layer or in second cladding layer. The photonic crystal layer may include a first photonic crystal structure in the first emission region and a second photonic crystal structure in the second emission region where the first and the second photonic crystal structures are different.