中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

70 records (took 0.027 seconds)

    Edge emission type semiconductor laser having waveguide
    1.
    发明专利
    Edge emission type semiconductor laser having waveguide 有权
    边缘发射型半导体激光器具有波长

    公开(公告)号：JP2009088532A

    公开(公告)日：2009-04-23

    申请号：JP2008250993

    申请日：2008-09-29

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： SCHMID WOLFGANG

    IPC: H01S5/16 ,  H01S5/20

    CPC classification number: H01S5/20 ,  H01S5/0425 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/16 ,  H01S5/204

    Abstract: PROBLEM TO BE SOLVED: To provide an improved edge emission type semiconductor laser capable of moderating heat generation by non-emissive re-coupling in a side facet of a semiconductor laser in an active layer.
    SOLUTION: In this edge emission type semiconductor laser, a second waveguide layer 2 adjoins a second mantle layer 5, and the active layer is not embedded in the second waveguide layer. The second waveguide layer 2 is optically coupled to a first waveguide layer 1 at least in partial regions 10 and 11. In addition, a third mantle layer 6 is arranged on the side of the second waveguide layer 2 opposite to the waveguide layer 1.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种改进的边缘发射型半导体激光器，其能够通过有源层中的半导体激光器的侧面中的非发射性重新耦合来调节发热。 解决方案：在该边缘发射型半导体激光器中，第二波导层2与第二外壳层5相邻，有源层不嵌入第二波导层。 第二波导层2至少在部分区域10和11中光耦合到第一波导层1.此外，在第二波导层2的与波导层1相对的一侧上布置有第三覆层6。 P>版权所有（C）2009，JPO＆INPIT

    Edge emission semiconductor laser including waveguide body
    2.
    发明专利
    Edge emission semiconductor laser including waveguide body 有权
    边缘发射半导体激光器，包括波导体

    公开(公告)号：JP2014013926A

    公开(公告)日：2014-01-23

    申请号：JP2013183113

    申请日：2013-09-04

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： SCHMID WOLFGANG

    IPC: H01S5/16 ,  H01S5/042 ,  H01S5/20

    CPC classification number: H01S5/20 ,  H01S5/0425 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/16 ,  H01S5/204

    Abstract: PROBLEM TO BE SOLVED: To provide an improved edge emission semiconductor laser in which heat generation due to nonradiative recombination in the side facet of the semiconductor laser is relaxed.SOLUTION: In the edge emission semiconductor laser, a plurality of contact surfaces 8a, 8b, and 8c are attached, at a periodic interval, onto a partial region of the semiconductor laser used for electrical pumping of an active layer forming a laser beam 13. The periodic interval is equal to two times of the transition length Lc, the transition length Lc is the interval of a maximum strength and an adjoining minimum strength in one of waveguide layers 1, 2. The midpoints of the contact surfaces 8a, 8c adjoining the side facet 9 are separated, respectively, therefrom by the transition length.

    Abstract translation: 要解决的问题：提供一种改进的边缘发射半导体激光器，其中由于半导体激光器的侧面中的非辐射复合而产生的热量被放宽。解决方案：在边缘发射半导体激光器中，多个接触表面8a，8b， 和8c以周期性间隔连接到用于激励形成激光束13的有源层的电泵浦的半导体激光器的部分区域上。周期性间隔等于过渡长度Lc的两倍，过渡长度Lc 是波导层1,2中的一个中的最大强度和相邻最小强度的间隔。与侧面9相邻的接触面8a，8c的中点分别与其间的过渡长度分开。

    SEMICONDUCTOR LASER DEVICE
    3.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开
    半导体激光器件

    公开(公告)号：WO2007098730A3

    公开(公告)日：2008-05-22

    申请号：PCT/DE2007000244

    申请日：2007-02-08

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  SCHMID WOLFGANG ,  MUELLER MARTIN

    Inventor： SCHMID WOLFGANG ,  MUELLER MARTIN

    IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04

    CPC classification number: H01S5/183 ,  H01S5/026 ,  H01S5/041 ,  H01S5/22 ,  H01S5/4031

    Abstract: The invention relates to a semiconductor laser device comprising an optically pumped surface-emitting vertical emitter (1) which emits in a vertical main radiating direction, and at least one monolithically integrated pumping radiation source (2) for optically pumping the vertical emitter (1), the pumping radiation source emitting pumping radiation that extends transversal to the vertical main radiating direction. According to a first embodiment, the inventive semiconductor laser device is characterized in that at least one vertical section of the pumping radiation source (2) is configured so as to be index-guiding for pumping radiation in a lateral direction perpendicular to the main direction of pumping radiation and perpendicular to the vertical main radiating direction. In a second embodiment, the semiconductor laser device is characterized in that the pumping radiation source (2) has a smaller width in a lateral direction perpendicular to the main direction of pumping radiation in at least one vertical section than in another vertical section. If the dimensions are adequate, modes of the pumping radiation can thus be entirely or at least partly displaced from said section in a vertical direction, resulting in a reduction of absorption losses of the pumping radiation on conducting layers.

    Abstract translation: 本发明涉及一种半导体激光装置与光泵浦的表面发射垂直发射器（1）发射在竖直主辐射方向，以及至少一个单片集成泵浦辐射源（2），用于光学泵浦垂直发射器（1），其中，在泵主辐射方向横向泵浦辐射源到垂直主辐射方向 运行时，发射泵浦辐射。 的半导体激光装置是根据第一实施例的特征在于，泵浦辐射源的至少一个垂直部分，其特征在于（2）在横向方向上横向于所述泵主辐射方向和横向于用于泵浦辐射垂直主辐射方向索引前导进行。 在第二个实施例中，半导体激光装置的特征在于，在至少一个垂直部分泵浦辐射源（2）在横向方向上横向于更小的宽度的泵主辐射方向上比在另一个垂直截面。 它以这种方式实现的，具有合适的尺寸，使得泵辐射模式被部分地从该部分中，从而泵辐射的吸收损耗可以减小到导电层在垂直方向上完全敦促或至少。

    LIGHT-EMITTING DIODE CHIP
    4.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开
    LEDS CHIP

    公开(公告)号：WO2005101531A3

    公开(公告)日：2006-05-11

    申请号：PCT/DE2005000677

    申请日：2005-04-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BADER STEFAN ,  SCHMID WOLFGANG

    Inventor： BADER STEFAN ,  SCHMID WOLFGANG

    IPC: H01L33/40 ,  H01L33/46 ,  H01L33/00

    CPC classification number: H01L33/405 ,  H01L33/465 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: The invention relates to a thin-film light-emitting diode chip in which the distance between a reflective layer (4) and a light-generating active zone (3) is such that radiation from the active zone (3) interferes with light reflected by the reflective layer (4). The interference affects the internal quantum efficiency of the active zone (3), and consequently the active zone has an emission characteristic with at least one preferred direction.

    Abstract translation: 本发明涉及其中的反射层之间的距离（4）和与所述反射镜层中的一个有源区中的一个（3）发射的辐射（4）反射的光产生活性区（3）被设定这样的薄膜发光芯片 干涉光，受此影响的干扰，从而有源区（3）的发射活性区（3）的内部量子效率与至少一个优选的方向来实现。

    SEMICONDUCTOR CHIP EMITTING POLARIZED RADIATION
    7.
    发明申请
    SEMICONDUCTOR CHIP EMITTING POLARIZED RADIATION 审中-公开
    偏振辐射半导体芯片

    公开(公告)号：WO2009039844A3

    公开(公告)日：2009-07-09

    申请号：PCT/DE2008001583

    申请日：2008-09-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  SCHMID WOLFGANG

    Inventor： SCHMID WOLFGANG

    IPC: H01L33/44 ,  H01L33/46

    CPC classification number: H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a radiation-emitting semiconductor chip (1) that emits polarized light using the Purcell effect. Such a semiconductor (1) emitting polarized radiation comprises a radiation-generating active zone (3) and a polarizing filter (5). The radiation-generating active zone (3) is arranged between a radiation-extracting surface of the semiconductor chip (1) and the polarizing filter (5).

    Abstract translation: 本发明涉及一种发射辐射的半导体芯片（1），利用该效果赛尔光发射偏振光。 这种偏振辐射发光半导体芯片（1）的放射线包括生成有源区（3）和一个偏振滤光器（5），其特征在于，产生辐射的有源区（3）被布置在半导体芯片（1）的辐射输出表面和偏振滤光器（5）之间 ，

    LUMINESCENT DIODE PROVIDED WITH A REFLECTION-REDUCING LAYER SEQUENCE
    9.
    发明申请
    LUMINESCENT DIODE PROVIDED WITH A REFLECTION-REDUCING LAYER SEQUENCE 审中-公开
    LUMINESCENT二极管反射减少层成功

    公开(公告)号：WO2006012818A3

    公开(公告)日：2006-04-06

    申请号：PCT/DE2005001065

    申请日：2005-06-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  PIETZONKA INES ,  SCHMID WOLFGANG ,  WIRTH RALPH

    Inventor： PIETZONKA INES ,  SCHMID WOLFGANG ,  WIRTH RALPH

    IPC: H01L33/10 ,  H01L33/46

    CPC classification number: H01L33/105 ,  H01L33/465

    Abstract: The invention relates to a luminescent diode (1) comprising an active area (7) which emits electromagnetic radiation in the direction of the main radiation (15). The active area (7) in the direction of the main radiation (15) is arranged downstream from a reflection-reducing layer sequence (16). Said reflection-reducing layer sequence contains a DBR mirror which is formed from at least one pair of layers (11, 12), a reflection coating (9) which is arranged downstream from the DBR-mirror (13) in the direction of the main radiation (15) and an intermediate layer (14) which is arranged between the DBR-mirror (13) and the reflection coating (9).

    Abstract translation: 在发光二极管（1）与活性区（7）中，在主辐射方向上的电磁辐射（15）被发射，其中，所述有源区（7）具有反射抑制层序列（16）中的主光束方向（15）的下游布置，包含防反射 层序列的至少一对层（11，12）形成的DBR镜（13），在主波束方向的DBR反射镜（13）（15）随后的补偿层（9）和所述DBR反射镜（13）和所述间 配置中间层（14）的化合物层（9）。

    OPTICALLY PUMPED SEMICONDUCTOR DEVICE
    10.
    发明申请
    OPTICALLY PUMPED SEMICONDUCTOR DEVICE 审中-公开
    光泵半导体器件

    公开(公告)号：WO2005107027A3

    公开(公告)日：2006-03-02

    申请号：PCT/DE2005000649

    申请日：2005-04-11

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  KARNUTSCH CHRISTIAN ,  LINDER NORBERT ,  SCHMID WOLFGANG

    Inventor： KARNUTSCH CHRISTIAN ,  LINDER NORBERT ,  SCHMID WOLFGANG

    IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04 ,  H01S5/14 ,  H01S5/323

    CPC classification number: H01S5/18305 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18388 ,  H01S5/32341

    Abstract: The invention relates to a semiconductor device comprising an optically pumped vertical emitter that is provided with an active vertical emitter layer (3) and a pumping radiation source by means of which a pumping radiation field is generated that propagates in a lateral direction while optically pumping the vertical emitter layer (3) in a pumping zone, the wavelength of the pumping radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pumping radiation source encompasses an active pumping layer (2) that is disposed downstream of the vertical emitter layer (3) in a vertical direction and at least partly overlaps with the vertical emitter layer from a vertical perspective. The active pumping layer (2) is arranged in such a way that the pumping radiation field generated during operation is more powerful than a parasitic, laterally propagating radiation field generated by the vertical emitter layer (3). Alternatively, a parasitic, laterally propagating radiation field is prevented from being generated by the vertical emitter layer (3).

    Abstract translation: 本发明涉及与具有活性垂直发射层（3）和泵辐射源，通过在泵辐射场的横向方向传播的方式的光学泵浦垂直发射的半导体器件中产生，其光学地泵的垂直发射极层（3）的泵区域，所述 泵浦辐射场的波长比所产生的辐射场的由垂直发射器（12）的波长小。 泵浦辐射源具有有源泵层（2），其在垂直发射层（3）的垂直方向的下游侧布置并且在垂直方向上观察至少部分地重叠的垂直发射层，有源泵层（2）被布置成使得在操作中 产生的泵浦辐射场具有比寄生更高的功率，由所述垂直发射层（3）产生的，横向传播的辐射场，或在其中产生的寄生的由垂直发射极层（3）被抑制横向传播辐射场。

Patent Agency Ranking