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公开(公告)号：JP2006157024A
公开(公告)日：2006-06-15
申请号：JP2005346116
申请日：2005-11-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WOLFGANG SCHMIDT , WIRTH RALPH , STREUBEL KLAUS
CPC classification number: H01L33/105 , B82Y20/00 , H01L33/405 , H01L33/465 , H01L2924/0002 , H01S5/0217 , H01S5/0425 , H01S5/18308 , H01S5/18375 , H01S5/34326 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an improved light emission semiconductor element which is remarkably small-sized, and can be constituted so as to have a high efficiency. SOLUTION: A first mirror 7 includes a metal layer 4 and an intermediate layer 3 disposed on the opposite side to an active region 2 side of the metal layer and composed of a beam-transmissive and electrically conductive material. The light emission semiconductor element is provided to operate using an optical resonator as an RCLED (Resonant Cavity Light Emitting Diode) and to form a non-coherent beam, or is provided to operate using an external optical resonator as a VECSEL (Vertical External Cavity Surface Emitting Laser) and to form a coherent beam. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种非常小尺寸的改进的发光半导体元件，并且可以被构造成具有高效率。 解决方案：第一反射镜7包括金属层4和中间层3，该金属层4和中间层3设置在与金属层的有源区2侧相反的一侧，并由透射和导电材料构成。 发光半导体元件设置为使用光学谐振器作为RCLED（谐振腔发光二极管）进行操作并形成非相干光束，或者被提供以使用外部光学谐振器作为VECSEL（垂直外部空腔表面 发射激光）并形成相干光束。 版权所有（C）2006，JPO＆NCIPI
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2.发明专利Semiconductor substrate that emits emissive light for surface-emitting laser, and its manufacturing method 审中-公开用于表面发射激光的EMIIS发光二极管及其制造方法
公开(公告)号：JP2006074051A
公开(公告)日：2006-03-16
申请号：JP2005251976
申请日：2005-08-31
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WOLFGANG SCHMIDT , STREUBEL KLAUS , LINDER NORBERT
IPC: H01S5/183
CPC classification number: H01S5/14 , H01S5/18308 , H01S5/2072
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor substrate for a surface-emitting laser with improved high output and current supply, a surface-emitting laser, and a method for manufacturing the semiconductor substrate, at a low technical cost.
SOLUTION: A semiconductor substrate (1), comprising an active layer (4) for causing emission light to emerge and a current supply layer (6) having a current block region (12) and a current pass region (13) and emitting emission light, having the vertical emission direction, is provided for a surface-emitting laser equipped equipped with an external resonator, and the external resonator has a predetermined resonator volume (14) that overlaps with the current passing region (13).
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：以技术上的低成本提供具有改进的高输出和电流供应的表面发射激光器的半导体衬底，表面发射激光器和半导体衬底的制造方法。 解决方案：一种半导体衬底（1），包括用于引发发射光的有源层（4）和具有电流阻挡区域（12）和电流通过区域（13）的电流供应层（6），以及 具有垂直发射方向的发射发射光被提供给配备有外部谐振器的表面发射激光器，并且外部谐振器具有与电流通过区域（13）重叠的预定谐振器体积（14）。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2007027728A
公开(公告)日：2007-02-01
申请号：JP2006190740
申请日：2006-07-11
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WIRTH RALPH , STREUBEL KLAUS
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/14 , H01L33/46 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an opto-electronic chip having extra-high irradiating output coupling efficiency, and to provide the opto-electronic chip in which the proportion of output coupling to a specific spacial angle region out of generated electromagnetic radiation is especially large. SOLUTION: The opto-electronic chip is provided with a semiconductor body having a radiating/emitting region and a partial region in which the surface of the semiconductor body is curved toward a carrier. The length of the lateral direction of the radiating/emitting region is shorter than the length of the lateral direction of the partial region. The problem is solved by providing the opto-electronic chip. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供具有超高照射输出耦合效率的光电芯片，并提供光电芯片，其中输出耦合到特定空间角区域的比例在产生的电磁辐射之外 特别大。 解决方案：光电芯片设置有具有辐射/发射区域和半导体主体的表面朝向载体弯曲的部分区域的半导体本体。 辐射/发射区域的横向长度比部分区域的横向长度短。 通过提供光电芯片来解决问题。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2006108673A
公开(公告)日：2006-04-20
申请号：JP2005287122
申请日：2005-09-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： STREUBEL KLAUS
CPC classification number: H01L25/0753 , H01L33/06 , H01L33/08 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: PROBLEM TO BE SOLVED: To provide a multiplex light emitting diode device having better color rendering index in a multiplex light emitting diode device. SOLUTION: The light emitting wavelength of an active zone changes in a prescribed format at least under one semiconductor, and hence the spectral bandwidth of light emitted from the semiconductor device is increased. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：提供一种在多路发光二极管装置中具有更好显色指数的多路复用发光二极管装置。 解决方案：活性区域的发光波长至少在一个半导体下以规定的格式变化，因此增加了从半导体器件发射的光的光谱带宽。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2007103930A
公开(公告)日：2007-04-19
申请号：JP2006262661
申请日：2006-09-27
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： LINDER NORBERT , GROENNINGER GUENTHER , HEIDBORN PETER , STREUBEL KLAUS , KUGLER SIEGMAR
IPC: H01L21/205 , H01L31/0264 , H01L33/02 , H01L33/04 , H01L33/30 , H01S5/02 , H01S5/323 , H01S5/327
CPC classification number: H01L33/04 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L33/025 , H01L33/30
Abstract: PROBLEM TO BE SOLVED: To provide an improved quasi-substrate having a lattice constant lower than the lattice constant of GaAs, and a semiconductor device comprising the quasi-substrate. SOLUTION: On a semiconductor substrate (1) made of GaAs, semiconductor layer arrangements (2, 13, 14, and 35) are given. The semiconductor layer arrangements (2, 13, 14, and 35) comprise many semiconductor layers of Al 1-y Ga y As 1-x P x [in the formula, 0≤x≤1, 0≤y≤1]. In this regard, some semiconductor layers comprise phosphorous proportion x. The proportion is larger than proportion in an adjacent semiconductor layer both in the growth direction of the semiconductor layer arrangement and under it. The invention comprises a semiconductor device comprising the substrate. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供具有低于GaAs的晶格常数的晶格常数的改进的准衬底，以及包括准衬底的半导体器件。 解决方案：在由GaAs制成的半导体衬底（1）上，给出半导体层布置（2,13,14和35）。 半导体层布置（2,13,14和35）包括许多半导体层，其中，Al
1-x P x 在式中，0≤x≤1,0≤y≤1]。 在这方面，一些半导体层包括磷比例x。 在半导体层布置的生长方向和其下方的相邻半导体层中的比例大于比例。 本发明包括一种包括该衬底的半导体器件。 版权所有（C）2007，JPO＆INPIT -
Patent Agency Ranking6.发明专利
公开(公告)号：JP2007189242A
公开(公告)日：2007-07-26
申请号：JP2007061973
申请日：2007-03-12
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ILLEK STEFAN , PLOESSL ANDREAS , STREUBEL KLAUS , WEGLEITER WALTER , WIRTH RALPH
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/405 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip with improved optical output which can be manufactured by a thin-film technique, and a method for manufacturing it. SOLUTION: A thin-film active layer is processed into a plurality of mesa shapes, and an isolation layer and a metalized layer having reflexivity are formed over the surface of the mesa. Further, the thin-film active layer is mounted on another supporting substrate, and the thin-film active layer is separated from a growth substrate. By reflexing the light generated from an active zone in the thin-film active layer by the isolation layer and the metalized layer formed on the surface of the mesa, luminous efficiency is improved. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供可以通过薄膜技术制造的具有改进的光输出的半导体芯片及其制造方法。 解决方案：将薄膜活性层加工成多个台面形状，并且在台面的表面上形成具有反射性的隔离层和金属化层。 此外，薄膜有源层安装在另一个支撑基板上，并且薄膜有源层与生长基板分离。 通过隔离层和形成在台面表面上的金属化层反射薄膜有源层中的有源区产生的光，发光效率提高。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2006019745A
公开(公告)日：2006-01-19
申请号：JP2005192973
申请日：2005-06-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： STREUBEL KLAUS
IPC: H01L33/60
CPC classification number: H01L33/60 , G02B19/0028 , G02B19/0061 , G02B19/0095
Abstract: PROBLEM TO BE SOLVED: To have reduced loss in the case of radiation emission or radiation-input coupling and comparatively advanced stability for ultraviolet radiation to be had by improving a beam shaping element, in a light emitting semiconductor chip 2 provided with the beam shaping element.
SOLUTION: The beam shaping element comprises an hollow body 1 provided with a light emission hole 7 and a light entrance hole 8 opposed to the light emission hole, and a semiconductor chip is in contact with the light entrance hole of the hollow body 1 or penetrates into the hollow body through the light entrance hole. The light emitting semiconductor chip is constituted so that the semiconductor chip emits electromagnetic radiation 3 into the interior of the hollow body, and at least a part of electromagnetic radiation reflects on a wall section 6 of the hollow body toward the light emission hole.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：为了在辐射发射或辐射输入耦合的情况下具有减小的损耗，并且通过改进光束成形元件可以获得相对较高的紫外线辐射稳定性，在设置有光束成形元件的发光半导体芯片2中 光束成形元件。 光束成形元件包括具有发光孔7的空心体1和与发光孔相对的光入射孔8，半导体芯片与中空体的光入射孔接触 1或通过光入射孔渗入中空体。 发光半导体芯片构成为使得半导体芯片将电磁辐射3发射到中空体的内部，并且电磁辐射的至少一部分在中空体的壁部6上朝向发光孔反射。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2008047906A
公开(公告)日：2008-02-28
申请号：JP2007209632
申请日：2007-08-10
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： EBERHARD FRANZ , GROETSCH STEFAN , LINDER NORBERT , MOOSBURGER JUERGEN , STREUBEL KLAUS , WIRTH RALPH , SABATHIL MATTHIAS , MUSCHAWECK JULIUS , BERGENEK KRISTER
CPC classification number: H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
Abstract: PROBLEM TO BE SOLVED: To provide a radiation emission element which can actualize relatively high luminance in a desired spatial direction, in a desired polarization direction or at a desired wavelength. SOLUTION: The radiation emission element according to the present invention is based on a semiconductor material and comprises a layer stack having an active layer sequence for producing a radiation emission element and a filter element placed at a rear side of the active layer sequence as seen from a radiation direction, and is configured in such a manner that the filter element emits a first emission component and reflects a second emission component within the layer stack, the second reflection component, after being reflected at the filter element, is subjected to deflection process or absorption emission process, and the radiation deflected or emitted is supposed to come into the filter element again. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种可以在期望的空间方向上，在期望的偏振方向或期望的波长上实现相对高的亮度的辐射发射元件。 解决方案：根据本发明的辐射发射元件基于半导体材料并且包括具有用于产生辐射发射元件的有源层序列和放置在有源层序列的后侧的滤波器元件的层堆叠 从辐射方向看，并且被配置为使得过滤元件发射第一发射分量并且反射层堆内的第二发射分量，第二反射分量在被滤波元件反射之后经受 偏转过程或吸收发射过程，并且偏转或发射的辐射应该再次进入过滤元件。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2005244241A
公开(公告)日：2005-09-08
申请号：JP2005051965
申请日：2005-02-25
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： STREUBEL KLAUS
CPC classification number: H01L21/2007 , H01L33/0079 , H01L2224/81224 , H01L2224/83224 , H01L2924/01079 , H01L2924/01322 , H01L2924/12041
Abstract: PROBLEM TO BE SOLVED: To provide a method of easily connecting two wafers as easily as possible, and to provide a wafer product.
SOLUTION: In a method for mutually connecting two wafers 11 and 12, both wafers are laminated with each other, thereby forming a contact region 15 between both wafers, and the contact region is heated, by limiting the contact region locally and in time. In a locally limited heating, important heating of the wafer is limited in a direction parallel to the contact region or in a direction vertical thereto, or preferably in the both direction. The method is especially suitable for processing components which tend to be affected by temperature.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供尽可能容易地连接两个晶片的方法，并提供晶片产品。 解决方案：在用于相互连接两个晶片11和12的方法中，两个晶片彼此层叠，从而在两个晶片之间形成接触区域15，并且通过局部限制接触区域并且在 时间。 在局部有限的加热中，晶片的重要加热在平行于接触区域的方向上或在与其垂直的方向上，或者优选在两个方向上受到限制。 该方法特别适用于加工易受温度影响的部件。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2001244499A
公开(公告)日：2001-09-07
申请号：JP2001045638
申请日：2001-02-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STREUBEL KLAUS
Abstract: PROBLEM TO BE SOLVED: To provide a fabrication method of an optically transparent substrate on which a semiconductor structure can be built up by epitaxial growth. SOLUTION: This fabrication method of an optically transparent substrate is such that a substrate layer (2) is built up on a substrate (1), which is subjected to lattice-matching, by epitaxial method, an optically transparent layer (3) is bonded to the substrate layer (2) on the side opposite to the substrate (1) by wafer bonding and then the lattice-matched substrate (1) is removed from the bonded unit of the substrate layer (2) and the transparent layer (3).
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