公开(公告)号：US20160190770A1

公开(公告)日：2016-06-30

申请号：US14912196

申请日：2014-08-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Tilman Eckert

IPC: H01S5/40 ,  H01S5/02 ,  G02B27/09 ,  H01S5/022

CPC classification number: H01S5/4031 ,  G02B7/025 ,  G02B27/0966 ,  H01S5/0201 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02288 ,  H01S5/4025

Abstract: A laser component assembly includes a carrier including first and second component portions wherein each component portion has a chip mounting surface, a lens mounting surface and a stop surface, the stop surface of each component portion includes first and second stop partial surfaces, the first stop partial surface is formed on a first stop element and the second stop partial surface is formed on a second stop element, the chip mounting surface is arranged between the first stop element and the second stop element, the stop surface is oriented perpendicularly to the chip mounting surface, a laser chip arranged on the chip mounting surface, the laser component assembly as a lens bar comprising an optical lens component portion and the lens bar is arranged on the lens mounting surfaces of the component portions and bears against the stop surfaces of the component portions.

Abstract translation: 激光部件组件包括：载体，其包括第一和第二部件，其中每个部件具有芯片安装表面，透镜安装表面和止动表面，每个部件部分的止动表面包括第一和第二止挡部分表面， 部分表面形成在第一止动元件上，第二止动部分表面形成在第二止动元件上，芯片安装表面布置在第一止动元件和第二止动元件之间，止动表面垂直于芯片安装 表面，设置在芯片安装表面上的激光芯片，作为包括光学透镜部件部分和透镜杆的透镜杆的激光部件组件布置在部件部分的透镜安装表面上并抵靠部件的止动表面 部分。

公开(公告)号：US10415763B2

公开(公告)日：2019-09-17

申请号：US16075360

申请日：2016-02-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert

IPC: F21K9/232 ,  F21K9/90 ,  F21V29/87 ,  F21Y101/00 ,  F21V29/85 ,  F21Y103/10 ,  F21Y115/10 ,  F21Y107/70

Abstract: A filament for a filament lamp includes a plurality of light emitting semiconductor chips, wherein the light emitting semiconductor chips are located on a carrier board, the light emitting semiconductor chips are electrically connected, and the carrier board is a flexible carrier board.

公开(公告)号：US10333032B2

公开(公告)日：2019-06-25

申请号：US14915873

申请日：2014-08-08

Applicant: OSRAM Opto Semiconductors GmbH ,  Karoline Bernhard-Hofer

Inventor： Frank Möllmer ,  Markus Arzberger ,  Michael Schwind ,  Thomas Höfer ,  Martin Haushalter ,  Mario Wiengarten ,  Tilman Eckert

IPC: H01L33/48 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L23/00 ,  H01L21/48 ,  H01L25/16 ,  H01L29/861 ,  H01L33/54 ,  H01L33/64

Abstract: An embodiment optoelectronic semiconductor device includes a housing having a leadframe with a first and second connection conductor. The housing further has a housing body surrounding the leadframe in one or more regions. The housing body extends in a vertical direction between a mounting side of the housing body and a front side of the housing body opposite the mounting side. The first connection conductor has a recess. A semiconductor chip configured to generate radiation is arranged within the housing, and the semiconductor chip is disposed in the recess and is affixed to the first connection conductor within the recess. A side face of the recess forms a reflector for reflecting the generated radiation. The first connection conductor protrudes from the housing body at the mounting side. The semiconductor chip is, in at least some regions, free of an encapsulation material adjoining the semiconductor chip.

公开(公告)号：US10263165B2

公开(公告)日：2019-04-16

申请号：US15543180

申请日：2016-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert ,  Claus Jäger ,  Ee Lian Lee ,  Michael Hirmer

IPC: H01L33/58 ,  H01L33/60 ,  H01L33/48

Abstract: In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.

公开(公告)号：US11195976B2

公开(公告)日：2021-12-07

申请号：US16604573

申请日：2018-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jia Ping Jackson Kua ,  Tilman Eckert ,  Alexander Linkov

IPC: H01L33/44 ,  H01L33/42 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/46

Abstract: An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

公开(公告)号：US09337612B2

公开(公告)日：2016-05-10

申请号：US14798999

申请日：2015-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert

IPC: H01S5/022 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01S5/02208 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01S5/02228 ,  H01S5/02236 ,  H01S5/02272 ,  H01S5/02276 ,  Y10T29/49147 ,  H01L2924/00014

Abstract: A laser component includes a housing and a laser chip arranged in the housing, wherein the housing includes a first soldering contact and a second soldering contact at a first outer surface, and a third soldering contact and a fourth soldering contact at a second outer surface, the first soldering contact connects to the third soldering contact in an electrically conductive manner and the second soldering contact connects to the fourth soldering contact in an electrically conductive manner, the housing includes a carrier substrate and a cover, a bottom side of the laser chip is arranged on the carrier substrate, the cover includes an encapsulation material, the laser chip is covered by the encapsulation material, and a beam direction of the laser chip is oriented in parallel to the bottom side of the laser chip.

Abstract translation: 激光部件包括壳体和布置在壳体中的激光芯片，其中壳体包括在第一外表面处的第一焊接接触和第二焊接接头，以及在第二外表面处的第三焊接接触和第四焊接接触， 第一焊接接头以导电方式连接到第三焊接接头，并且第二焊接接头以导电方式连接到第四焊接接头，壳体包括载体基板和盖，激光芯片的底侧是 布置在载体基板上，盖包括封装材料，激光芯片被封装材料覆盖，激光芯片的光束方向平行于激光芯片的底侧。

公开(公告)号：US20200098948A1

公开(公告)日：2020-03-26

申请号：US16604573

申请日：2018-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jia Ping Jackson KUA ,  Tilman Eckert ,  Alexander Linkov

IPC: H01L33/44 ,  H01L33/42 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62

Abstract: An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

公开(公告)号：US10008440B2

公开(公告)日：2018-06-26

申请号：US15327297

申请日：2015-07-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Brandl ,  Tilman Eckert

IPC: H01L23/498 ,  H01L23/00 ,  H01L33/62 ,  H01S5/022 ,  H01L21/48

CPC classification number: H01L23/49838 ,  H01L21/4846 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/32221 ,  H01L2224/83801 ,  H01L2924/0002 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0066 ,  H01S5/02268 ,  H01S5/02272

Abstract: A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. The solder stop structure subdivides the contact zone into a first zone region and a second zone region, with the first zone region having the solder pad. The solder stop structure extends over a portion of a total length of the contact zone such that the contact zone has a free connecting region that is free of the solder stop structure. The first and second zone regions are connected to one another by means of the free connecting region.

公开(公告)号：US20180026167A1

公开(公告)日：2018-01-25

申请号：US15543180

申请日：2016-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert ,  Claus Jäger ,  Ee Lian Lee ,  Michael Hirmer

IPC: H01L33/58 ,  H01L33/60 ,  H01L33/48

CPC classification number: H01L33/58 ,  H01L33/486 ,  H01L33/60

Abstract: An optoelectronic component is disclosed. In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.

公开(公告)号：US09722141B2

公开(公告)日：2017-08-01

申请号：US15121072

申请日：2015-03-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tilman Eckert ,  Stefan Brandl

IPC: H01L33/10 ,  H01L33/44 ,  H01L33/22 ,  H01L33/58 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/49113 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: An optoelectronic semiconductor element may include at least one LED chip which emits infrared radiation via a top side during operation. The radiation has a global intensity maximum at wavelengths between 800 nm and 1100 nm. The radiation has, at most 5% of the intensity of the intensity maximum at a limit wavelength of 750 nm. The radiation has a visible red light component. The semiconductor element may further include a filter element, which is arranged directly or indirectly on the top side of the LED chip and which has a transmissivity of at most 5% for the visible red light component of the LED chip, wherein the transmissivity of the filter element is at least 80%, at least in part, for wavelengths between the limit wavelength and 1100 nm, and a radiation exit surface provided for emitting the filtered radiation.