公开(公告)号：WO2017156195A1

公开(公告)日：2017-09-14

申请号：PCT/US2017/021458

申请日：2017-03-08

Applicant: OSTENDO TECHNOLOGIES, INC.

Inventor： EL-GHOROURY, Hussein ,  LIU, Minghsuan ,  YADAVALLI, Kameshwar ,  TANG, Weilong ,  HASKELL, Benjamin ,  ZHOU, Hailong

IPC: H01J61/24 ,  H01J1/02

Abstract: An electromagnetic wave irradiation apparatus and methods to bond unbonded areas in a bonded pair of substrates are disclosed. The unbonded areas between the substrates are eliminated by thermal activation in the unbonded areas induced by electromagnetic wave irradiation having a wavelength selected to effect a phonon or electron excitation. A first substrate of the bonded pair of substrates absorbs the electromagnetic radiation and a portion of a resulting thermal energy transfers to an interface of the bonded pair of substrates at the unbonded areas with sufficient flux to cause opposite sides the first and second substrates to interact and dehydrate to form a bond (e.g., Si-O-Si bond).

Abstract translation: 公开了一种电磁波照射设备和用于在粘合的一对基板中粘合未粘合区域的方法。 基片之间的未粘合区域通过在具有选定的波长的电磁波辐射引起的未粘合区域中的热活化而被消除，以实现声子或电子激发。 所述一对接合衬底中的第一衬底吸收电磁辐射，并且一部分产生的热能在未接合区域处传递至接合的一对衬底的界面，并具有足够的通量以引起第一和第二衬底的相对侧相互作用并且 脱水形成键（例如Si-O-Si键）。

公开(公告)号：WO2017106387A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/066729

申请日：2016-12-14

Applicant: OSTENDO TECHNOLOGIES, INC.

Inventor： VOLKOVA, Anna ,  IVANTSOV, Vladimir ,  SYRKIN, Alexander ,  HASKELL, Benjamin ,  EL-GHOROURY, Hussein

IPC: H01L21/20 ,  H01L29/15 ,  H01L33/24

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

Abstract translation: 公开了一种用于在衬底上生长强烈排列的均匀截面半导体复合纳米柱的方法。 该方法包括：（a）在衬底表面上形成小面锥形凹坑; （b）在凹坑的小平面上开始成核; 和; （c）促进细胞核向凹坑中心的生长，在那里它们与孪生结合并随后一起成长为复合纳米柱。 多量子阱核 - 壳纳米柱异质结构可以在纳米柱的侧壁上生长。 此外，可以通过纳米柱的过度生长来形成连续的半导体外延层，以便于制造高质量的平面器件结构或用于发光结构。