公开(公告)号：EP0672298A1

公开(公告)日：1995-09-20

申请号：EP94903525.0

申请日：1993-12-07

Applicant: Oregon Graduate Institute of Science and Technology

Inventor： PARSONS, James, D. ,  CHADDA, Ajay, K. ,  CHEN, Her, Song ,  WU, Jin

IPC: H01L21 ,  C30B25

CPC classification number: C30B25/02 ,  C30B29/36 ,  C30B29/38 ,  Y10T428/24942

Abstract: A substrate for the growth of monocrystalline beta -SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within +/-5% of the lattice parameter of 6H alpha -SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within +/-5% of the lattice parameter of beta -SiC. Monocrystalline beta -SiC can be nucleated and grown on the surface of the cubic material.