公开(公告)号：DE60327962D1

公开(公告)日：2009-07-30

申请号：DE60327962

申请日：2003-04-02

Applicant: PANASONIC CORP

Inventor： IWAKI HIDEKI ,  TAGUCHI YUTAKA ,  OGURA TETSUYOSI ,  SUGAYA YASUHIRO ,  ASAHI TOSHIYUKI ,  NISHIYAMA TOUSAKU ,  IDOGAWA YOSHINOBU

IPC: H01L23/66 ,  H01L21/48 ,  H01L21/56 ,  H01L23/10 ,  H01L23/12 ,  H01L23/34 ,  H01L23/552 ,  H01L25/00 ,  H05K1/18

Abstract: A semiconductor built-in millimeter-wave band module includes: an insulating substrate (105) made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate (103) made of a dielectric material having thermal conductivity higher than the insulating substrate (105) and laminated on one surface of the insulating substrate (105); a plurality of wiring patterns (119) formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device (101) operating at millimeter-wave band, which is arranged inside of the insulating substrate (105), is packaged on the high thermal conductivity substrate (103) in a face-up manner, and is connected electrically with the wiring patterns (119); and a distributed constant circuit element (121) and an active element (124) provided on the semiconductor device (101). In this module, a void (107) is provided inside of the insulating substrate (105) and in the vicinity of a surface of the distributed constant circuit element (121) and the active element (124). With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.