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公开(公告)号：WO2010029656A3
公开(公告)日：2010-06-24
申请号：PCT/JP2009001970
申请日：2009-04-30
Applicant: PANASONIC CORP , MIYOSHI YUICHI , YAMAOKA TOHRU , NOTAKE HIDENORI , TAKEUCHI YUSUKE
Inventor： MIYOSHI YUICHI , YAMAOKA TOHRU , NOTAKE HIDENORI , TAKEUCHI YUSUKE
IPC: B81C1/00
CPC classification number: B81C1/00158 , B81B2201/0257 , B81C2201/0133 , G01P15/0802 , G01P15/097 , G01P15/123
Abstract: A MEMS device, including: a substrate (101) having a first principal plane and a second principal plane opposite to the first principal plane; a through hole (110) formed in the substrate (101); and a vibrating film (105) formed over the first principal plane so as to cover the through hole (110). The first principal plane and the second principal plane are both a (110) crystal face; and the through hole (110) has a substantially rhombic shape on the second principal plane.
Abstract translation: 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底（101）; 形成在所述基板（101）中的通孔（110）; 以及形成在所述第一主平面上以覆盖所述通孔（110）的振动膜（105）。 第一主平面和第二主平面都是（110）晶面; 并且所述通孔（110）在所述第二主平面上具有大致菱形。
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公开(公告)号：EP1686599A4
公开(公告)日：2009-04-15
申请号：EP04818870
申请日：2004-11-12
Applicant: PANASONIC CORP
Inventor： YAMAOKA TOHRU , OGURA HIROSHI , MIYOSHI YUICHI , SASAKI TOMOYUKI
CPC classification number: H01G5/0136 , H01G5/16 , H01G7/025 , H04R19/016 , H04R2499/11
Abstract: A silicon nitride film (103) and another silicon nitride film (106) are so formed as to cover a charged silicon oxide film (105) which is to be an electret.
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公开(公告)号：EP1722595A4
公开(公告)日：2010-07-28
申请号：EP05709817
申请日：2005-02-07
Applicant: PANASONIC CORP
Inventor： YAMAOKA TOHRU , OGURA HIROSHI , MIYOSHI YUICHI
CPC classification number: H04R19/016 , B81B2201/0257 , B81C1/00944 , B81C2201/112 , H04R19/005
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公开(公告)号：EP1722596A4
公开(公告)日：2009-11-11
申请号：EP05719481
申请日：2005-02-24
Applicant: PANASONIC CORP
Inventor： OGURA HIROSHI , YAMAOKA TOHRU
CPC classification number: H04R19/016 , B81B7/0061 , B81B2201/0257 , B81B2203/0127 , B81B2207/012 , H01G7/02 , H04R19/005
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